100 V, 3.0 A, Low VCE(sat) PNP Transistor

NSS1C300ET4G
100 V, 3.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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100 VOLTS, 3.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
COLLECTOR
2, 4
1
BASE
Features
3
EMITTER
• Complement to NSS1C301ET4G
• NSV Prefix for Automotive and Other Applications Requiring
•
4
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1 2
3
DPAK
CASE 369C
STYLE 1
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector−Base Voltage
Rating
VCBO
140
Vdc
Collector−Emitter Voltage
VCEO
100
Vdc
VEB
6.0
Vdc
Emitter−Base Voltage
Collector Current − Continuous
IC
3.0
Adc
ICM
6.0
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
Collector Current − Peak
33
0.26
W
W/°C
2.1
0.017
W
W/°C
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
MARKING DIAGRAM
YWW
1C30EG
Y
WW
1C30E
G
= Year
= Work Week
= Device Code
= Pb−Free
ORDERING INFORMATION
Package
Shipping†
NSS1C300ET4G
DPAK
(Pb−Free)
2500/
Tape & Reel
NSV1C300ET4G
DPAK
(Pb−Free)
2500/
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 7
1
Publication Order Number:
NSS1C300E/D
NSS1C300ET4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.8
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
59.5
°C/W
Min
Typ
Max
Unit
−100
−
−
−140
−
−
−6.0
−
−
−
−
−0.1
−
−
−0.1
180
180
120
50
−
−
−
−
−
−
360
−
−
−
−
−
−
−
−
−
−0.070
−0.150
−0.250
−0.400
−
−
−1.0
−
−
−0.900
−
100
−
−
360
−
−
60
−
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −140 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −0.1 A, VCE = −2.0 V)
(IC = −0.5 A, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −3.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −10 mA)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
(IC = −3.0 A, IB = −0.300 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
Cutoff Frequency
(IC = −500 mA, VCE = −10 V, f = 100 MHz)
−
V
V
V
fT
Input Capacitance
(VEB = 5.0 V, f = 1.0 MHz)
Cibo
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
MHz
pF
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS1C300ET4G
TYPICAL CHARACTERISTICS
1000
1000
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 2 V
150°C
25°C
−55°C
100
10
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
150°C
25°C
−55°C
100
10
0.01
10
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. DC Current Gain
0.4
IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.5
−55°C
0.4
0.3
25°C
0.2
150°C
0.1
0
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC/IB = 50
−55°C
0.3
0.2
25°C
150°C
0.1
0
0.01
10
Figure 3. Collector−Emitter Saturation Voltage
1.2
−55°C
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
25°C
0.8
0.6
0.4
150°C
0.2
0
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
0.1
1
IC, COLLECTOR CURRENT (A)
10
Figure 4. Collector−Emitter Saturation Voltage
1.2
1
10
IC/IB = 50
25°C
0.8
0.6
0.4
150°C
0.2
0
0.01
10
−55°C
1
Figure 5. Base−Emitter Saturation Voltage
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
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3
10
NSS1C300ET4G
TYPICAL CHARACTERISTICS
2
VCE = 2 V
TA = 25°C
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
VBE(on), BASE−EMITTER ON
VOLTAGE (V)
1.2
1
−55°C
25°C
0.8
0.6
0.4
150°C
0.2
1.6
1A
1.2
2A
0.8
0.5 A
0.4
0.1 A
0
0
0.01
IC = 3 A
0.1
1
IC, COLLECTOR CURRENT (A)
10
0.1
Figure 7. Base−Emitter On Voltage
10
100
IB, BASE CURRENT (mA)
1000
Figure 8. Collector Saturation Region
1000
fTau, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
1000
Cib
Cob
100
VCE = 5 V
100
10
10
0.1
1
10
VR, REVERSE VOLTAGE (V)
0.01
100
Figure 9. Capacitance
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Current−Gain−Bandwidth Product
10
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
1
10 ms
1
100 ms
0.1
1.0 s
0.01
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 11. Safe Operating Area
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4
100
10
NSS1C300ET4G
R(t), TRANSIENT THERMAL RESPONSE
(°C/W)
TYPICAL CHARACTERISTICS
10
D = 0.5
1
0.2
0.1
0.05
RqJC(t) = r(t) RqJC
RqJC = 3.8°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.02
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
P(pk)
0.1
Figure 12. Typical Transient Thermal Response, Junction−to−Case
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5
t1
t2
DUTY CYCLE, D = t1/t2
1
10
NSS1C300ET4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
c
SIDE VIEW
b2
e
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS1C300E/D