20V 3A LOW VCE(sat) PNP High Current Transistor

NSS20300MR6T1G
20 V, 5 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e 2 PowerEdge family of low V CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
http://onsemi.com
20 VOLTS
5.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 78 mW
COLLECTOR
1, 2, 5, 6
3
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−20
Vdc
Collector-Base Voltage
VCBO
−30
Vdc
Emitter-Base Voltage
VEBO
−6.0
Vdc
IC
−3.0
Adc
Collector Current − Peak
ICM
−5.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Collector Current − Continuous
4
EMITTER
1
TSOP−6
CASE 318G
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
545
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
230
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
1.06
W
8.5
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
118
°C/W
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 1)
RqJL (Note 2)
48
40
°C/W
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 2)
1.75
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 2 oz copper traces.
2. FR−4 @ 500 mm2, 2 oz copper traces.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 2
1
DEVICE MARKING
VS1 MG
G
VS1 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSS20300MR6T1G TSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS20300MR6/D
NSS20300MR6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = −20 Vdc)
ICES
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
−20
−
−30
−
−6.0
−
−
−0.1
−
−0.1
−
−0.1
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = −1.0 A, VCE = −1.5 V)
(IC = −1.5 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.10 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.02 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1A, IB = −0.010 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
100
100
100
230
−
400
−
−
−
−
−0.010
−0.127
−0.250
−0.015
−0.145
−0.320
−
−
−0.85
−
−
−0.875
100
−
−
V
V
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
CIBO
−
650
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
COBO
−
100
pF
3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
http://onsemi.com
2
MHz
NSS20300MR6T1G
0.25
IC/IB = 10
150°C
0.15
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.2
IC/IB = 100
0.2
150°C
0.15
−55°C
0.1
0.05
25°C
0.1
0.05
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
10
0
0.001
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
150°C (5.0 V)
475
150°C (2.0 V)
425
375
325
25°C (5.0 V)
275
25°C (2.0 V)
225
175
−55°C (5.0 V)
125
75
0.001
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
−55°C (2.0 V)
0.01
IC/IB = 10
1.1
0.1
1
10
0.3
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain versus Collector
Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.00
1.1
IC/IB = 100
−55°C
0.80
0.70
25°C
0.60
0.50
150°C
0.40
VCE = −1.0
1.0
VBE(on), BASE EMITTER
TURN−ON VOLTAGE (V)
0.90
10
1.2
525
hFE, DC CURRENT GAIN
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
575
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
−55°C
0.30
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.20
0.001
0.01
0.1
1
10
0.2
0.001
IC, COLLECTOR CURRENT (A)
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage
versus Collector Current
Figure 6. Base Emitter Turn−On Voltage versus
Collector Current
http://onsemi.com
3
NSS20300MR6T1G
0.6
0.4
IC = 500 mA
IC = 100 mA
0.2
0.0
0.01
CIBO, INPUT CAPACITANCE (pF)
0.8
+25°C
IC = 10 mA
IC = 300 mA
0.1
1
10
100
650
625
600
575
550
525
500
475
450
425
400
375
350
325
300
275
250
225
0
−CIBO (pF)
+25°C
1
IB, BASE CURRENT (mA)
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
2
3
5
5
6
Figure 8. NSS20300MR6T1G Input Capacitance
−COBO (pF)
+25°C
0
4
VEB, EMITTER BASE VOLTAGE (V)
Figure 7. Saturation Region
COBO, OUTPUT CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
1.0
10
15
20
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 9. NSS20300MR6T1G Output
Capacitance
http://onsemi.com
4
25
7
NSS20300MR6T1G
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
DIM
A
A1
b
c
D
E
e
L
HE
q
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS20300MR6/D
Similar pages