30V 700mA LOW VCE(sat) NPN Transistor

NSS30071MR6T1G
30 V, 0.7 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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30 VOLTS
0.7 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 200 mW
COLLECTOR
PINS 2, 5
• This is a Pb−Free Device
BASE
PIN 6
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
30
V
Collector−Base Voltage
VCBO
40
V
Emitter−Base Voltage
EMITTER
PIN 3
VEBO
5.0
V
Collector Current
IC
700
mA
Base Current
IB
350
mA
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction−to−Ambient
(Note 1)
PD
PD
RqJA
342
178
366
mW
mW
°C/W
SC−74
CASE 318F
STYLE 2
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
PD
PD
RqJA
665
346
188
mW
mW
°C/W
DEVICE MARKING
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided),
Operating to Steady State.
4
6 5
1 2
3
VS3M
VS3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NSS30071MR6T1G
Package
Shipping †
SC−74 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
Publication Order Number:
NSS30071MR6/D
NSS30071MR6T1G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
40
−
−
Vdc
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
30
−
−
Vdc
V(BR)EBO
Emitter−Base Breakdown Voltage
(IE = 100 mAdc)
5.0
−
−
Vdc
ICBO
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
−
−
−
−
1.0
10
mAdc
IEBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
−
−
10
mAdc
(VCE = 3.0 Vdc, IC = 100 mAdc)
150
−
−
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
−
−
0.25
Vdc
VCE(sat)
Collector −Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
−
−
0.4
Vdc
VBE(sat)
Base−Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
−
−
1.1
Vdc
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
−
−
1.0
Vdc
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2
0.3
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
NSS30071MR6T1G
0.7 A
0.2
0.5 A
0.1
0.1 A
10 mA
0
IC = 1.0 mA
0.000001 0.00001
0.0001
0.001
0.01
0.1
0.1
0.1 A
10 mA
IC = 1.0 mA
0
0.000001 0.00001
0.0001
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
VBE(sat)
h FE , DC CURRENT GAIN
VOLTAGE (V)
25°C
150°C
0.1
0.01
VCE(sat)
−40°C
0.1
0.01
0.001
1.0
IC/IB = 10
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
1.0
1.0
0.16
VBE(sat)
IC/IB = 10
VCE(sat) , VOLTAGE (V)
VOLTAGE (V)
0.1
1.0
VCE = 3.0 V
0.1
VCE(sat)
0.01
0.01
IB, BASE CURRENT (A)
1000
100
0.001
IC/IB = 100
0.001
0.01
0.1
1.0
T = 85°C
0.12
25°C
0°C
0.08
0.04
0
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “ON” Voltages
Figure 6. Collector−Emitter Saturation Voltage
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3
1.0
NSS30071MR6T1G
0.2
IC/IB = 100
−40°C
25°C
0.15
VBE(on) , VOLTAGE (V)
VCE(sat), VOLTAGE (V)
1.0
0°C
T = 85°C
0.1
0.05
0.75
25°C
150°C
0.5
0.25
VCE = 1.0 V
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
0.01
0.1
0
1.0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
Figure 8. VBE(on) Voltage
1.0
1.0
0.5
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
DUTY CYCLE, D = t1/t2
0.01
0.0001
0.001
0.1
0.01
1.0
TIME (sec)
Figure 9. Thermal Response Curve
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4
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
10
100
NSS30071MR6T1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
A
L
6
5
4
2
3
B
S
1
DIM
A
B
C
D
G
H
J
K
L
M
S
D
G
M
J
C
0.05 (0.002)
K
H
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
0_
10 _
0.0985 0.1181
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.65
0_
10 _
2.50
3.00
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NSS30071MR6T1G
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSS30071MR6/D
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