NSS30070MR6T1G 30 V, 0.7 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 30 VOLTS 0.7 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 320 mW COLLECTOR PINS 2, 5 BASE PIN 6 • This Device is Pb−Free and is RoHS Compliant EMITTER PIN 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 30 V Collector−Base Voltage VCBO 40 V Emitter−Base Voltage VEBO 5.0 V Collector Current IC 700 mA Base Current IB 350 mA Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction-to-Ambient (Note 1) PD PD RqJA 342 178 366 mW mW °C/W Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction-to-Ambient (Note 2) PD PD RqJA 665 346 188 mW mW °C/W TJ, Tstg −55 to +150 °C Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State. 4 6 5 1 2 3 SC−74 CASE 318F STYLE 2 DEVICE MARKING VS2 MG G VS2 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSS30070MR6T1G Package Shipping† SC−74 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 Publication Order Number: NSS30070MR6/D NSS30070MR6T1G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Base Breakdown Voltage (IC = 100 mA) V(BR)CBO 40 − − V Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 30 − − V Emitter−Base Breakdown Voltage (IE = 100 mA) V(BR)EBO 5.0 − − V (VCB = 25 V, IE = 0 A) (VCB = 25 V, IE = 0 A, TA = 125°C) ICBO − − − − 1.0 10 mA (VEB = 5.0 V, IC = 0 A) IEBO − − 10 mA (VCE = 3.0 V, IC = 100 mA) hFE 150 − − V Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.25 V Collector −Emitter Saturation Voltage (IC = 700 mA, IB = 70 mA) VCE(sat) − − 0.4 V Base−Emitter Saturation Voltage (IC = 700 mA, IB = 70 mA) VBE(sat) − − 1.1 V (IC = 700 mA, VCE = 1.0 V) VBE(on) − − 1.0 V Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain 0.5 0.4 0.3 0.7 A 0.2 0.5 A 0.1 A 0.1 10 mA IC = 1.0 mA 0 0.000001 0.00001 0.0001 0.001 0.01 0.2 VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) Base−Emitter Turn−On Voltage 0.5 A 0.15 0.1 0.1 A 10 mA 0.05 IC = 1.0 mA 0 0.1 0.000001 0.00001 0.0001 0.001 0.01 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 0.1 1.0 1000 VBE(sat) VCE(sat), VBE(sat) SATURATION VOLTAGES h FE , DC CURRENT GAIN VCE = 3.0 V 150°C 25°C -40°C 0.1 VCE(sat) 100 IC/IB = 10 0.01 0.01 0.1 1.0 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “SAT” Voltages http://onsemi.com 2 1.0 NSS30070MR6T1G 1.0 0.16 T = 85°C 25°C IC/IB = 10 VCE(sat) , VOLTAGE (V) VCE(sat), VBE(sat) SATURATION VOLTAGES VBE(sat) 0.1 VCE(sat) 0.12 0°C 0.08 0.04 IC/IB = 100 0 0.01 0.01 0.001 0.1 1.0 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “SAT” Voltages Figure 6. Collector−Emitter Saturation Voltage 0.6 1.0 T = 85°C IC/IB = 100 0.5 -40°C 25°C VBE(on) , VOLTAGE (V) VCE(sat) , VOLTAGE (V) 0.1 0.01 0°C 0.4 0.3 0.2 0.75 25°C 0.5 150°C 0.25 0.1 VCE = 1.0 V 0 0 TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 1.0 0.0001 0.001 0.1 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector−Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) - TA = P(pk) ZqJA(t) t1 0.02 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.0001 0.001 0.1 0.01 1.0 TIME (sec) Figure 9. Thermal Response Curve http://onsemi.com 3 10 100 NSS30070MR6T1G PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N D 6 5 4 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. E HE 1 DIM A A1 b c D E e L HE q b e 0.05 (0.002) q C A L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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