30V 700mA LOW VCE(sat) PNP Transistor

NSS30070MR6T1G
30 V, 0.7 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e 2 PowerEdge family of low V CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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30 VOLTS
0.7 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 320 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
• This Device is Pb−Free and is RoHS Compliant
EMITTER
PIN 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
30
V
Collector−Base Voltage
VCBO
40
V
Emitter−Base Voltage
VEBO
5.0
V
Collector Current
IC
700
mA
Base Current
IB
350
mA
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction-to-Ambient
(Note 1)
PD
PD
RqJA
342
178
366
mW
mW
°C/W
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction-to-Ambient
(Note 2)
PD
PD
RqJA
665
346
188
mW
mW
°C/W
TJ, Tstg
−55 to +150
°C
Operating and Storage Temperature
Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Operating to Steady State.
4
6 5
1 2
3
SC−74
CASE 318F
STYLE 2
DEVICE MARKING
VS2 MG
G
VS2
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSS30070MR6T1G
Package
Shipping†
SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Publication Order Number:
NSS30070MR6/D
NSS30070MR6T1G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
(IC = 100 mA)
V(BR)CBO
40
−
−
V
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
30
−
−
V
Emitter−Base Breakdown Voltage
(IE = 100 mA)
V(BR)EBO
5.0
−
−
V
(VCB = 25 V, IE = 0 A)
(VCB = 25 V, IE = 0 A, TA = 125°C)
ICBO
−
−
−
−
1.0
10
mA
(VEB = 5.0 V, IC = 0 A)
IEBO
−
−
10
mA
(VCE = 3.0 V, IC = 100 mA)
hFE
150
−
−
V
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.25
V
Collector −Emitter Saturation Voltage
(IC = 700 mA, IB = 70 mA)
VCE(sat)
−
−
0.4
V
Base−Emitter Saturation Voltage
(IC = 700 mA, IB = 70 mA)
VBE(sat)
−
−
1.1
V
(IC = 700 mA, VCE = 1.0 V)
VBE(on)
−
−
1.0
V
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
0.5
0.4
0.3
0.7 A
0.2
0.5 A
0.1 A
0.1
10 mA
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.001
0.01
0.2
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
Base−Emitter Turn−On Voltage
0.5 A
0.15
0.1
0.1 A
10 mA
0.05
IC = 1.0 mA
0
0.1
0.000001 0.00001
0.0001
0.001
0.01
IB, BASE CURRENT (A)
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
0.1
1.0
1000
VBE(sat)
VCE(sat), VBE(sat)
SATURATION VOLTAGES
h FE , DC CURRENT GAIN
VCE = 3.0 V
150°C
25°C
-40°C
0.1
VCE(sat)
100
IC/IB = 10
0.01
0.01
0.1
1.0
0.001
IC, COLLECTOR CURRENT (A)
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. “SAT” Voltages
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2
1.0
NSS30070MR6T1G
1.0
0.16
T = 85°C
25°C
IC/IB = 10
VCE(sat) , VOLTAGE (V)
VCE(sat), VBE(sat)
SATURATION VOLTAGES
VBE(sat)
0.1
VCE(sat)
0.12
0°C
0.08
0.04
IC/IB = 100
0
0.01
0.01
0.001
0.1
1.0
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “SAT” Voltages
Figure 6. Collector−Emitter Saturation Voltage
0.6
1.0
T = 85°C
IC/IB = 100
0.5
-40°C
25°C
VBE(on) , VOLTAGE (V)
VCE(sat) , VOLTAGE (V)
0.1
0.01
0°C
0.4
0.3
0.2
0.75
25°C
0.5
150°C
0.25
0.1
VCE = 1.0 V
0
0
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.1
1.0
0.0001
0.001
0.1
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
Figure 8. VBE(on) Voltage
1.0
1.0
0.5
0.2
0.1
0.1
P(pk)
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) RqJA
TJ(pk) - TA = P(pk) ZqJA(t)
t1
0.02
t2
DUTY CYCLE, D = t1/t2
0.01
0.01
0.0001
0.001
0.1
0.01
1.0
TIME (sec)
Figure 9. Thermal Response Curve
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3
10
100
NSS30070MR6T1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
6
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
E
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
0.05 (0.002)
q
C
A
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NSS30070MR6/D
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