40V, 8A, Low VCE(sat) NPN Transistor

NSS40401LT1G
40 V, 8.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e 2 PowerEdge family of low V CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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40 VOLTS, 8.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 44 mW
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
4.0
A
Collector Current − Peak
ICM
8.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Rating
Collector Current − Continuous
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
AC M G
G
1
AC = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS40401LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 0
1
Publication Order Number:
NSS40401L/D
NSS40401LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
−
−
40
−
−
6.0
−
−
−
−
0.1
−
−
0.1
200
200
180
180
−
370
−
−
−
−
−
−
−
−
−
−
0.006
0.044
0.085
0.082
0.011
0.060
0.115
0.115
−
0.760
0.900
−
0.760
0.900
150
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 10 mA)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
−
−
450
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
−
−
45
pF
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
100
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
750
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
110
ns
SWITCHING CHARACTERISTICS
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS40401LT1G
TYPICAL CHARACTERISTICS
800
600
500
25°C
400
300
−55°C
200
100
0
0.001
0.01
0.1
1
500
25°C
400
300
−55°C
200
0
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
0.5
IC/IB = 10
150°C
0.4
0.3
0.2
25°C
0.1
−55°C
0
0.001
0.01
0.1
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
600
100
0.5
10
IC/IB = 50
0.4
0.3
150°C
0.2
0.1
25°C
0
0.001
IC, COLLECTOR CURRENT (mA)
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
−55°C
0.6
0.4
0.1
1
10
1.2
IC/IB = 10
1.0
0.8
0.01
Figure 4. Collector−Emitter Saturation Voltage
vs. Collector Current
1.4
1.2
−55°C
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector−Emitter Saturation Voltage
vs. Collector Current
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE = 5.0 V
150°C
700
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
700
800
VCE = 2.0 V
150°C
25°C
0.2 150°C
0
0.001
0.01
0.1
1
10
VCE = 2.0 V
1.0
−55°C
0.8
0.6
25°C
0.4
0.2
0
150°C
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (mA)
Figure 5. Base−Emitter Saturation Voltage vs.
Collector Current
Figure 6. Base−Emitter Turn−On Voltage vs.
Collector Current
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3
10
NSS40401LT1G
2.0
80
TA = 25 °C
Cobo, OUTPUT CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.6
1.2
0.8
2A
0.4
10 mA
0
0.01
100 mA
0.1
IC = 4 mA
500 mA
1
100
10
70
60
50
40
30
20
10
1000
0
IB, BASE CURRENT (mA)
15
20
25
30
35
Figure 8. Output Capacitance
400
10
375
IC, COLLECTOR CURRENT (A)
Cibo, INPUT CAPACITANCE (pF)
10
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Collector Saturation Region
350
325
300
275
250
225
200
175
5
0
1
2
3
4
5
100 ms
1s
0.1
0.01
6
1 ms
10 ms
1
0.01
0.1
1
10
VEB, EMITTER BASE VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Input Capacitance
Figure 10. Safe Operating Area
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4
100
NSS40401LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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NSS40401L/D
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