Amplifier Transistor

MPSA70
Amplifier Transistor
PNP Silicon
Features
• Pb−Free Package is Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−40
Vdc
Emitter −Base Voltage
VEBO
−4.0
Vdc
Collector Current − Continuous
IC
−100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
TO−92
CASE 29−11
STYLE 1
1
2
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
3
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPS
A70
AYWW G
G
MPSA70 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MPSA70RLRM
TO−92
2,000/Ammo Pack
TO−92
(Pb−Free)
2,000/Ammo Pack
MPSA70RLRMG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
MPSA70/D
MPSA70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−40
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
−4.0
−
Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
−
−100
nAdc
DC Current Gain
(IC = −5.0 mAdc, VCE = −10 Vdc)
hFE
40
400
−
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
VCE(sat)
−
−0.25
Vdc
fT
125
−
MHz
Cobo
−
4.0
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −5.0 mAdc, VCE = −10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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2
MPSA70
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 mA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 mA
3.0
100 mA
300 mA
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
3.0
2.0
300 mA
1.0
0.7
0.5
100 mA
30 mA
0.3
0.2
1.0
10 mA
0.1
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
10k
10
20
50
1.0M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
1.0M
500k
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
2.0 dB
3.0 dB
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
NF + 20 log10
20k
10k
0.5 dB
2.0k
1.0k
500
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
2 2 1ń2
S ) In RS ƫ
ƪen2 ) 4KTR
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
5.0k
200
100
10k
200k
100k
50k
20k
10k
200
100
5.0k
Figure 2. Noise Current
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
Figure 1. Noise Voltage
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
500 700 1.0k
IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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3
MPSA70
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN
400
TJ = 125°C
25°C
200
−55 °C
100
80
MPSA70
VCE = 1.0 V
VCE = 10 V
60
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
100
1.0
TA = 25°C
MPSA70
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
300 mA
200 mA
150 mA
40
100 mA
20
50 mA
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region
V, VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 8. Collector Characteristics
1.4
1.2
250 mA
60
0
20
IB = 400 mA
350 mA
50
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
− 55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
100
25°C to 125°C
0
Figure 9. “On” Voltages
qVB for VBE
0.2
− 55°C to 25°C
0.5 1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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4
50
100
MPSA70
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
tf
30
td @ VBE(off) = 0.5 V
2.0
100
70
50
20
20 30
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
−1.0
100
− 2.0 − 3.0 − 5.0 − 7.0 −10
− 20 − 30
IC, COLLECTOR CURRENT (mA)
− 50 − 70 −100
Figure 12. Turn−Off Time
500
10
TJ = 25°C
TJ = 25°C
7.0
VCE = 20 V
Cib
C, CAPACITANCE (pF)
300
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.2
0.5
1.0
2.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain − Bandwidth Product
Figure 14. Capacitance
20
10
MPSA70
hfe ≈ 200
@ IC = −1.0 mA
7.0
5.0
3.0
200
VCE = −10 Vdc
f = 1.0 kHz
TA = 25°C
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
IC, COLLECTOR CURRENT (mA)
hoe , OUTPUT ADMITTANCE (m mhos)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 11. Turn−On Time
hie , INPUT IMPEDANCE (k Ω )
VCC = − 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
30
20
10
20
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
MPSA70
hfe ≈ 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 15. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
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5
50
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MPSA70
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 18
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) • RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 17. Thermal Response
IC, COLLECTOR CURRENT (mA)
400
200
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 17. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
100 ms
100
TC = 25°C
dc
60
TA = 25°C
40
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
2.0
1.0 s
dc
20
4.0
10 ms
1.0 ms
40
4.0
6.0 8.0 10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 19. Active−Region Safe Operating Area
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
A train of periodical power pulses can be represented by the
model as shown in Figure 19. Using the model and the device
thermal response the normalized effective transient thermal
resistance of Figure 17 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 17 by
the steady state value RqJA.
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
10−1
10−2
−4
0
−2
0
0
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
For more information, see AN569/D.
Figure 20. Typical Collector Leakage Current
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6
MPSA70
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPSA70/D
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