Amplifier Transistor

MPS6428
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
50
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
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TO−92 (TO−226AA)
CASE 29−04
STYLE 1
1
2
3
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
—
Vdc
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
—
0.025
mA
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
0.01
mA
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
0.01
mA
Characteristic
OFF CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MPS6428/D
MPS6428
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
250
250
250
250
—
650
—
—
—
—
0.2
0.6
Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 0.01 mAdc)
(VCE = 5.0 Vdc, IC = 0.1 mAdc)
(VCE = 5.0 Vdc, IC = 1.0 mAdc)
(VCE = 5.0 Vdc, IC = 10 mAdc)
hFE
—
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
Vdc
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.56
0.66
Vdc
fT
100
700
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
3.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
8.0
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hie
3.0
30
kΩ
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hre
2.0
20
X 10− 4
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
200
800
—
Output Admittance
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hoe
5.0
50
mmhos
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 V, f = 100 MHz)
NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS
Noise Figure/Voltage
(VCE = 5.0 V, IC = 0.1 mA, TA = 25°C)
NF
VT
Max (1)
NF
VT
Max (2)
NF
VT
Max (3)
7.0
6.0
3.5
1. RS = 10 kΩ, BW = 1.0 Hz, f = 100 Hz
2. RS = 50 kΩ, BW = 15.7 kHz, f = 10 Hz−10 kHz
3. RS = 500 Ω, BW = 1.0 Hz, f = 10 Hz
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2
18.1
5700
4.3
Unit
dB
nV
MPS6428
PACKAGE DIMENSIONS
CASE 029−04
(TO−226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
X X
J
G
H
V
C
1
SECTION X−X
N
N
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPS6428/D
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