Amplifier Transistor

NPN − MPS6601; PNP −
MPS6651, MPS6652
MPS6652 is a Preferred Device
Amplifier Transistors
Features
• Voltage and Current are Negative for PNP Transistors
• Pb−Free Packages are Available*
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COLLECTOR
3
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Value
Unit
VCEO
MPS6601/6651
MPS6652
Collector −Base Voltage
Vdc
25
30
VEBO
4.0
Vdc
Collector Current − Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
PNP
1
EMITTER
1
EMITTER
VCBO
Emitter −Base Voltage
NPN
Vdc
25
40
MPS6601/6651
MPS6652
2
BASE
2
BASE
TO−92
CASE 29
STYLE 1
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. RqJA is measured with the device soldered into a typical printed circuit board.
MARKING DIAGRAM
MPS
66xy
AYWW G
G
MPS66xy = Device Code
x = 0 or 5
y = 1 or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 5
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS6601/D
NPN − MPS6601; PNP − MPS6651, MPS6652
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
25
40
−
−
25
40
−
−
4.0
−
−
−
0.1
0.1
−
−
0.1
0.1
50
50
30
−
−
−
−
0.6
−
1.2
100
−
−
30
td
−
25
ns
tr
−
30
ns
ts
−
250
ns
tf
−
50
ns
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MPS6601/6651
MPS6652
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Vdc
V(BR)CBO
MPS6601/6651
MPS6652
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
MPS6601/6651
MPS6652
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
MPS6601/6651
MPS6652
Vdc
Vdc
mAdc
ICES
mAdc
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cobo
pF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 40 Vdc, IC = 500 mAdc,
IB1 = 50 mAdc,
tp w 300 ns Duty Cycle)
Rise Time
Storage Time
Fall Time
ORDERING INFORMATION
Package
Shipping†
MPS6601RLRAG
TO−92 (TO−226)
(Pb−Free)
2000 Units / Tape & Reel
MPS6651G
TO−92 (TO−226)
(Pb−Free)
MPS6652
TO−92 (TO−226)
MPS6652G
TO−92 (TO−226)
(Pb−Free)
MPS6652RLRAG
TO−92 (TO−226)
(Pb−Free)
Device
5000 Units / Bulk
2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
NPN − MPS6601; PNP − MPS6651, MPS6652
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
P(pk)
SINGLE PULSE
t1
0.01
SINGLE PULSE
0.03
t2
0.02
0.01
0.001
RqJC(t) = (t) qJC
RqJC = 100°C/W MAX
RqJA(t)d = r(t) qJA
RqJA = 357°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (SECONDS)
Figure 1. Thermal Response
TURN−ON TIME
VCC
−1.0 V
5.0 ms
100
VCC
+VBB
+40
V
+40
V
RL
100
OUTPUT
+10
V
0
TURN−OFF TIME
tr = 3.0 ns
OUTPUT
RB
Vin
RB
Vin
* CS t 6.0 pF
5.0 mF
RL
* CS t 6.0 pF
5.0 mF
100
100
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 2. Switching Time Test Circuits
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3
100
NPN − MPS6601; PNP − MPS6651, MPS6652
NPN
PNP
300
200
70
VCE = 1.0 V
TJ = 25°C
50
30
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
h FE , CURRENT GAIN
100
10
100
VCE = 10 V
TJ = 25°C
f = 30 MHz
10
100
200
1000
300
200
100
70
50
VCE = −10 V
TJ = 25°C
f = 30 MHz
30
−10
−100
−200
−1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product
Figure 6. Current Gain Bandwidth Product
−1.0
TJ = 25°C
VBE(SAT) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
−1000
IC, COLLECTOR CURRENT (mA)
0.8
VBE(ON) @ VCE = 1.0 V
0.6
0.4
0
1.0
−100
Figure 4. MPS6651/6652 DC Current Gain
70
0.2
VCE = −1.0 V
TJ = 25°C
Figure 3. MPS6601/6602 DC Current Gain
100
1.0
50
IC, COLLECTOR CURRENT (mA)
200
30
70
IC, COLLECTOR CURRENT (mA)
300
50
100
20
−10
1000
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
h FE , CURRENT GAIN
200
100
0
−1.0
1000
VBE(SAT) @ IC/IB = 10
VBE(ON) @ VCE = −1.0 V
−0.4
−0.2
VCE(SAT) @ IC/IB = 10
10
−0.6
TJ = 25°C
VCE(SAT) @ IC/IB = 10
−10
−100
−1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. On Voltages
Figure 8. On Voltages
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4
NPN − MPS6601; PNP − MPS6651, MPS6652
NPN
PNP
160
80
TJ = 25°C
60
40
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
TJ = 25°C
Cib
20
Cob
0
Cob
Cib
5.0
1.0
10
15
20
3.0
4.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
120
80
Cib
40
0
25
5.0
Cob
Cob
Cib
−5.0
−1.0
Figure 9. Capacitance
6.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
VCE = 5.0 V
f = 1.0 kHz
TA = 25°C
8.0
IC = 100 mA
4.0
2.0
10
1k
100
8.0
6.0
IC = 100 mA
4.0
0
10 k
100
10
1k
10 k
Rs, SOURCE RESISTANCE (OHMS)
Rs, SOURCE RESISTANCE (OHMS)
Figure 11. MPS6601/6602 Noise Figure
Figure 12. MPS6651/6652 Noise Figure
10 k
td @ VBE(off) = 0.5 V
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
1k
500
td @ VBE(off) = −0.5 V
VCC = −40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
5k
3k
t, TIME (NS)
5k
3k
t, TIME (NS)
VCE = −5.0 V
f = 1.0 kHz
TA = 25°C
2.0
10 k
ts
200
100
1k
500
ts
200
100
50
tf
20
tr
10
−25
−5.0
Figure 10. Capacitance
10
0
−10
−15
−20
−2.0
−3.0
−4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
50
100
200
tf
50
500
tr
td
20
td
1000
10
−10
−20
−50
−100
−200
−500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. MPS6601/6602 Switching Times
Figure 14. MPS6651/6652 Switching Times
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5
−1000
NPN − MPS6601; PNP − MPS6651, MPS6652
PNP
−0.8
R qVB , TEMPERATURE COEFFICIENT (mV/°C)
R qVB , TEMPERATURE COEFFICIENT (mV/ °C)
NPN
−1.2
−1.6
RqVB for VBE
−2.0
−2.4
−2.8
1.0
10
100
1000
RqVB for VBE
−2.0
−2.4
−2.8
−1.0
−10
−100
−1000
IC, COLLECTOR CURRENT (mA)
Figure 15. Base−Emitter Temperature
Coefficient
Figure 16. Base−Emitter Temperature
Coefficient
1.0 MS
500
TC = 25°C
200
1.0 MS
−500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
−1.6
−1 k
TC = 25°C
−200
1.0 s
100
1.0 s
−100
50
MPS6601
MPS6602
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
1.0
2.0
5.0
10
MPS6651
−50
MPS6652
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−20
−10
40
20
−1.0
−2.0
−5.0
−10
−20
−40
VCE, COLLECTOR−EMITTER VOLTAGE
VCE, COLLECTOR−EMITTER VOLTAGE
Figure 17. Safe Operating Area
Figure 18. Safe Operating Area
1.0
−1.0
TJ = 25°C
VCE , COLLECTOR VOLTAGE (VOLTS)
VCE , COLLECTOR VOLTAGE (VOLTS)
−1.2
IC, COLLECTOR CURRENT (mA)
1k
0.8
0.6
IC =
1000 mA
0.4
0.2
0
−0.8
IC =
50 mA
IC =
10 mA
0.01
0.1
IC =
100 mA
IC =
500 mA
IC =
250 mA
1.0
10
100
TJ = 25°C
−0.8
−0.6
IC =
−1000 mA
−0.4
−0.2
0
−0.01
IC =
−10 mA
IC =
−50 mA
−0.1
IC =
−100 mA
−1.0
IC =
−500 mA
IC =
−250 mA
−10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 19. MPS6601/6602 Saturation Region
Figure 20. MPS6651/6652 Saturation Region
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6
−100
NPN − MPS6601; PNP − MPS6651, MPS6652
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPS6601/D
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