Amplifier Transistor

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
80
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
500
mAdc
Collector Current − Continuous
1
BASE
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
Symbol
PD
RqJA
PD
1
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
SOT−23 (TO−236)
CASE 318
STYLE 6
300
2.4
mW
mW/°C
MARKING DIAGRAM
°C/W
2
Thermal Resistance, Junction-to-Ambient
(Note 2)
RqJA
417
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
KB M G
G
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
1
KB
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBT8099LT1G
Package
Shipping†
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1
Publication Order Number:
MMBT8099LT1/D
MMBT8099LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
−
80
−
6.0
−
−
0.1
−
−
0.1
−
−
−
0.1
−
100
100
75
300
−
−
−
−
0.4
0.3
−
0.6
−
0.8
150
−
−
6.0
−
25
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MHz
pF
pF
MMBT8099LT1G
TURN-ON TIME
TURN-OFF TIME
VCC
-1.0 V
VCC
+VBB
+40 V
5.0 ms
+40 V
RL
100
RL
100
OUTPUT
+10 V
RB
Vin
RB
Vin
0
tr = 3.0 ns
OUTPUT
* CS t 6.0 pF
5.0 mF
* CS t 6.0 pF
5.0 mF
100
100
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
300
40
200
20
C, CAPACITANCE (pF)
5.0 V
VCE = 1.0 V
100
70
Cibo
10
8.0
6.0
50
4.0
Cobo
30
1.0
1.0 k
700
500
2.0
3.0
5.0 7.0 10
20
30
50 70
0.5
1.0
2.0
10
5.0
20
Figure 2. Current−Gain − Bandwidth Product
Figure 3. Capacitance
tf
30
20
tr
td @ VBE(off) = 0.5 V
20
30
50
70
100
50
100
1.0 k
700
500
ts
100
70
50
10
0.2
VR, REVERSE VOLTAGE (VOLTS)
200
10
2.0
0.1
100
IC, COLLECTOR CURRENT (mA)
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
TJ = 25°C
TJ = 25°C
I C , COLLECTOR CURRENT (mA)
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 1. Switching Time Test Circuits
300
200
100
70
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
20
DUTY CYCLE ≤ 10%
200
10
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Switching Times
Figure 5. Active−Region Safe Operating Area
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3
MMBT8099LT1G
400
1.0
0.8
25°C
200
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN
TJ = 125°C
-55°C
100
VCE = 5.0 V
80
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
60
VCE(sat) @ IC/IB = 10
1.0
10
2.0 3.0 5.0
20 30
50
100 200
R qVB , TEMPERATURE COEFFICIENT (mV/ °C)
IC =
50 mA
IC =
100 mA
IC =
200 mA
0.8
0.4
IC =
10 mA
1.0
0.7
0.5
0.1
0.07
0.05
5.0
10
20
0.1
0.2
0.5
1.0
2.0
5.0
10
100
200
100
200
-1.0
-1.4
-1.8
RqVB FOR VBE
-55°C TO 125°C
-2.2
-2.6
-3.0
0.2
20
50
0.5
1.0
2.0
5.0
10
20
50
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Collector Saturation Region
Figure 9. Base−Emitter Temperature Coefficient
D = 0.5
0.2
0.3
0.2
2.0
Figure 7. “ON” Voltages
1.2
0.05
1.0
Figure 6. DC Current Gain
IC =
20 mA
0
0.02
0.5
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
1.6
0
0.2
IC, COLLECTOR CURRENT (mA)
2.0
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
0.2 0.3 0.5
0.1
0.05
0.02
SINGLE PULSE
ZqJC(t) = r(t) • RqJC
TJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJA
TJ(pk) - TA = P(pk) ZqJA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
P(pk)
0.01
t1
SINGLE PULSE
0.03
t2
0.02
DUTY CYCLE, D = t1/t2
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 10. Thermal Response
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4
2.0 k
5.0 k
10 k
20 k
50 k 100 k
MMBT8099LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MMBT8099LT1/D
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