Amplifier Transistor NPN

MPS6521 (NPN)
MPS6523 (PNP)
MPS6521 is a Preferred Device
Amplifier Transistors
Features
• Voltage and Current are Negative for PNP Transistors
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
NPN
PNP
Unit
VCEO
MPS6521
MPS6523
Collector −Base Voltage
Vdc
25
−
−
25
VCBO
MPS6521
MPS6523
Emitter −Base Voltage
4.0
Vdc
Collector Current − Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
2
BASE
MARKING
DIAGRAM
TO−92
CASE 29−11
STYLE 1
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Printed Circuit Board Mounting)
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
EMITTER
1
EMITTER
−
25
VEBO
Operating and Storage Junction
Temperature Range
2
BASE
Vdc
40
−
COLLECTOR
3
MPS
652x
AYWW G
G
3
MPS652x = Device Code
x = 1 or 3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS6521
MPS6521G
MPS6521RLRA
MPS6521RLRAG
MPS6523
MPS6523G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Package
Shipping †
TO−92
5000 Units/Box
TO−92
(Pb−Free)
5000 Units/Box
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
TO−92
5000 Units/Box
TO−92
(Pb−Free)
5000 Units/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS6521/D
MPS6521 (NPN)
MPS6523 (PNP)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
V(BR)CEO
25
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
−
Vdc
−
−
0.05
0.05
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0)
mAdc
ICBO
MPS6521
MPS6523
ON CHARACTERISTICS
hFE
−
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
MPS6521
150
−
(IC = 2.0 mAdc, VCE = 10 Vdc)
MPS6521
300
600
(IC = 100 mAdc, VCE = 10 Vdc)
MPS6523
150
−
(IC = 2.0 mAdc, VCE = 10 Vdc)
MPS6523
300
600
VCE(sat)
−
0.5
Vdc
Cobo
−
3.5
pF
NF
−
3.0
dB
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k W,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
NPN
MPS6521
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
10 < t1 < 500 ms
DUTY CYCLE = 2%
10 k
−0.5 V
<1.0 ns
t1
+3.0 V
+10.9 V
0
CS < 4.0 pF*
−9.1 V
275
10 k
< 1.0 ns
1N916
*Total shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS < 4.0 pF*
MPS6521 (NPN)
MPS6523 (PNP)
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 mA
10
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
100 mA
7.0
5.0
10 mA
3.0
20
300 mA
100 mA
10
5.0
2.0
1.0
30 mA
0.5
30 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
10 mA
0.2
2.0
0.1
10
20
50
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10k
10
20
50
Figure 3. Noise Voltage
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10k
Figure 4. Noise Current
NPN
MPS6521
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
BANDWIDTH = 1.0 Hz
200k
100k
50k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
5k
2.0 dB
2k
1k
500
200
100
50
1M
500k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
500k
3.0 dB 4.0 dB
6.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
10 dB
500 700
20k
10k
2.0 dB
2k
1k
500
200
100
1k
1.0 dB
5k
5.0 dB
8.0 dB
10
20
Figure 5. Narrow Band, 100 Hz
RS , SOURCE RESISTANCE (OHMS)
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1k
Figure 6. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is defined as:
20k
NF + 20 log10
10k
5k
1.0 dB
2k
1k
500
200
100
50
3.0 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
2.0 dB
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
2 2 1ń2
S ) In RS Ǔ
ǒen2 ) 4KTR
4KTRS
1k
IC, COLLECTOR CURRENT (mA)
Figure 7. Wideband
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MPS6521 (NPN)
MPS6523 (PNP)
NPN
MPS6521
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN
400
TJ = 125°C
25°C
200
−55 °C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
200 mA
40
100 mA
20
0
Figure 9. Collector Saturation Region
V, VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
5.0
10
15
20
25
30
35
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 10. Collector Characteristics
1.4
1.2
400 mA
300 mA
60
0
20
IB = 500 mA
50
1.6
0.8
25°C to 125°C
0
*qVC for VCE(sat)
− 55°C to 25°C
−0.8
25°C to 125°C
−1.6
−2.4
0.1
100
*APPLIES for IC/IB ≤ hFE/2
Figure 11. “On” Voltages
qVB for VBE
0.2
− 55°C to 25°C
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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50
100
MPS6521 (NPN)
MPS6523 (PNP)
NPN
MPS6521
TYPICAL DYNAMIC CHARACTERISTICS
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
td @ VBE(off) = 0.5 Vdc
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
20
3.0
1.0
2.0
20 30
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
1.0
100
2.0
20 30
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
500
10
TJ = 25°C
f = 100 MHz
TJ = 25°C
f = 1.0 MHz
7.0
300
200
C, CAPACITANCE (pF)
VCE = 20 V
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Current−Gain — Bandwidth Product
Figure 16. Capacitance
20
hie , INPUT IMPEDANCE (k Ω )
70 100
Figure 14. Turn−Off Time
10
hfe ≈ 200 @ IC = 1.0 mA
7.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
50
200
hoe , OUTPUT ADMITTANCE (m mhos)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 13. Turn−On Time
50
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
hfe ≈ 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 17. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
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50
100
MPS6521 (NPN)
MPS6523 (PNP)
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NPN
MPS6521
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 20
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) w RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
t, TIME (ms)
Figure 19. Thermal Response
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 Vdc
A train of periodical power pulses can be
represented by the model as shown in Figure 20. Using
the model and the device thermal response the
normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from
Figure 19 by the steady state value RqJA.
Example:
The MPS6521 is dissipating 2.0 watts peak under the
following conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2,
the reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor
Application Note AN569/D, available from the
Literature Distribution Center or on our website at
www.onsemi.com.
103
102
ICEO
101
ICBO
AND
100
ICEX @ VBE(off) = 3.0 Vdc
10−1
10−2
−4
0
−2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 21.
IC, COLLECTOR CURRENT (mA)
400
1.0 ms
200
100
TC = 25°C
TA = 25°C
40
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
10 ms
1.0 s
dc
20
6.0
The safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 22 is based upon TJ(pk) = 150°C;
TC or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in
Figure 19. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
dc
60
4.0
100 ms
4.0
6.0
8.0
10
20
40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 22.
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MPS6521 (NPN)
MPS6523 (PNP)
PNP
MPS6523
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 mA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 mA
3.0
100 mA
300 mA
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
3.0
2.0
300 mA
1.0
0.7
0.5
100 mA
30 mA
0.3
0.2
1.0
10 mA
0.1
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
10k
10
20
50
Figure 23. Noise Voltage
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
5.0k
10k
Figure 24. Noise Current
NOISE FIGURE CONTOURS
BANDWIDTH = 1.0 Hz
200k
100k
50k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
1.0M
500k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
(VCE = − 5.0 Vdc, TA = 25°C)
1.0M
500k
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
2.0 dB
3.0 dB
5.0 dB
10
RS , SOURCE RESISTANCE (OHMS)
Figure 25. Narrow Band, 100 Hz
1.0M
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0k
Figure 26. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
NF + 20 log10
20k
10k
2.0k
1.0k
500
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
2 2 1ń2
S ) In RS ƫ
ƪen2 ) 4KTR
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
0.5 dB
5.0k
200
100
20
500 700 1.0k
IC, COLLECTOR CURRENT (mA)
Figure 27. Wideband
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MPS6521 (NPN)
MPS6523 (PNP)
PNP
MPS6523
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN
400
TJ = 125°C
25°C
200
−55 °C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
3.0
2.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
100
1.0
TA = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 28. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
300 mA
150 mA
40
100 mA
20
50 mA
0
V, VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
50
5.0
10
15
20
25
30
35
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 30. Collector Characteristics
1.4
0.6
250 mA
200 mA
Figure 29. Collector Saturation Region
1.2
350 mA
60
0
20
IB = 400 mA
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
0
− 55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
100
25°C to 125°C
Figure 31. “On” Voltages
qVB for VBE
0.2
− 55°C to 25°C
0.5 1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 32. Temperature Coefficients
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50
100
MPS6521 (NPN)
MPS6523 (PNP)
PNP
MPS6523
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
3.0
tf
30
td @ VBE(off) = 0.5 V
2.0
100
70
50
20
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
−1.0
100
− 20 − 30
− 2.0 − 3.0 − 5.0 − 7.0 −10
IC, COLLECTOR CURRENT (mA)
− 50 − 70 −100
Figure 34. Turn−Off Time
500
10
TJ = 25°C
TJ = 25°C
7.0
VCE = 20 V
Cib
C, CAPACITANCE (pF)
300
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 35. Current−Gain — Bandwidth Product
Figure 36. Capacitance
20
10
MPS6521
hfe ≈ 200
@ IC = −1.0 mA
7.0
5.0
3.0
2.0
VCE = −10 Vdc
f = 1.0 kHz
TA = 25°C
MPS6523
hfe ≈ 100
@ IC = −1.0 mA
1.0
0.7
0.5
0.3
0.2
0.1
200
hoe , OUTPUT ADMITTANCE (m mhos)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 33. Turn−On Time
hie , INPUT IMPEDANCE (k Ω )
VCC = − 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
10
20
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
30
20
MPS6521
hfe ≈ 200
@ IC = 1.0 mA
10
7.0
5.0
MPS6523
hfe ≈ 100
@ IC = 1.0 mA
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 37. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 38. Output Admittance
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9
50
100
MPS6521 (NPN)
MPS6523 (PNP)
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
PNP
MPS6523
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 40
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) w RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
t, TIME (ms)
Figure 39. Thermal Response
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 Vdc
103
102
ICEO
101
ICBO
AND
100
ICEX @ VBE(off) = 3.0 Vdc
10−1
10−2
−4
0
−2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 41.
IC, COLLECTOR CURRENT (mA)
400
1.0 ms
200
100
TC = 25°C
TA = 25°C
40
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
4.0
2.0
10 ms
1.0 s
dc
20
6.0
The safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for
reliable operation. Collector load lines for specific
circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 42 is based upon TJ(pk) = 150°C;
TC or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in
Figure 39. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
100 ms
dc
60
4.0
6.0
8.0
10
20
A train of periodical power pulses can be
represented by the model as shown in Figure 40. Using
the model and the device thermal response the
normalized effective transient thermal resistance of
Figure 39 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from
Figure 39 by the steady state value RqJA.
Example:
The MPS6523 is dissipating 2.0 watts peak under the
following conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 39 at a pulse width of 1.0 ms and D = 0.2,
the reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor
Application Note AN569/D, available from the
Literature Distribution Center or on our website at
www.onsemi.com.
40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 42.
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10
MPS6521 (NPN)
MPS6523 (PNP)
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPS6521/D
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