Amplifier Transistor NPN

MPSA20
Amplifier Transistor
NPN Silicon
Features
• Pb−Free Package is Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
4.0
Vdc
Collector Current − Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
TO−92
CASE 29−11
STYLE 1
1
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
2
3
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. RqJA is measured with the device soldered into a typical printed circuit board.
MPS
A20
AYWW G
G
MPSA20 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPSA20
MPSA20G
Package
Shipping
TO−92
5,000 Units / Box
TO−92
(Pb−Free)
5,000 Units / Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
Publication Order Number:
MPSA20/D
MPSA20
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
4.0
−
Vdc
ICBO
−
100
nAdc
DC Current Gain (Note 2)
(IC = 5.0 mAdc, VCE = 10 Vdc)
hFE
40
400
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
−
0.25
Vdc
fT
125
−
MHz
Cobo
−
4.0
pF
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 2)
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
10 < t1 < 500 ms
DUTY CYCLE = 2%
10 k
−0.5 V
<1.0 ns
t1
+3.0 V
+10.9 V
0
CS < 4.0 pF*
−9.1 V
275
10 k
< 1.0 ns
1N916
*Total shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS < 4.0 pF*
MPSA20
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
20
100
BANDWIDTH = 1.0 Hz
RS = 0
50
300 mA
10
100 mA
7.0
5.0
10 mA
3.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
20
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
300 mA
100 mA
10
5.0
2.0
1.0
30 mA
0.5
30 mA
10 mA
0.2
2.0
0.1
10
20
50
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10k
10
20
50
Figure 3. Noise Voltage
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
1M
500k
BANDWIDTH = 1.0 Hz
10k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500k
RS , SOURCE RESISTANCE (OHMS)
10k
BANDWIDTH = 1.0 Hz
10 dB
500 700
20k
10k
2.0 dB
2k
1k
500
200
100
1k
1.0 dB
5k
3.0 dB
5.0 dB
8.0 dB
10
20
Figure 5. Narrow Band, 100 Hz
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1k
Figure 6. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is defined as:
20k
NF + 20 log10
10k
5k
1.0 dB
2k
1k
500
200
100
50
5k
200k
100k
50k
20k
200
100
50
2k
Figure 4. Noise Current
500k
200k
100k
50k
100 200
500 1k
f, FREQUENCY (Hz)
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
2.0 dB
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
2 2 1ń2
S ) In RS Ǔ
ǒen2 ) 4KTR
4KTRS
1k
IC, COLLECTOR CURRENT (mA)
Figure 7. Wideband
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3
MPSA20
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN
400
TJ = 125°C
25°C
200
−55 °C
100
80
MPSA20
VCE = 1.0 V
VCE = 10 V
60
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70
100
100
1.0
MPSA20
TJ = 25°C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
200 mA
40
100 mA
20
0
Figure 9. Collector Saturation Region
V, VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
5.0
10
15
20
25
30
35
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 10. Collector Characteristics
1.4
1.2
400 mA
300 mA
60
0
20
IB = 500 mA
50
1.6
0.8
25°C to 125°C
0
*qVC for VCE(sat)
− 55°C to 25°C
−0.8
25°C to 125°C
−1.6
−2.4
0.1
100
*APPLIES for IC/IB ≤ hFE/2
Figure 11. “On” Voltages
qVB for VBE
0.2
− 55°C to 25°C
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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4
50
100
MPSA20
TYPICAL DYNAMIC CHARACTERISTICS
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
td @ VBE(off) = 0.5 Vdc
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
20
3.0
1.0
2.0
20 30
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
1.0
100
2.0
3.0
20
30
50
70 100
Figure 14. Turn−Off Time
500
10
TJ = 25°C
f = 100 MHz
TJ = 25°C
f = 1.0 MHz
7.0
300
200
C, CAPACITANCE (pF)
VCE = 20 V
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Current−Gain − Bandwidth Product
Figure 16. Capacitance
20
10
MPSA20
hfe ≈ 200 @ IC = 1.0 mA
7.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.05
50
10
20
50
200
hoe , OUTPUT ADMITTANCE (m mhos)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 13. Turn−On Time
hie , INPUT IMPEDANCE (k Ω )
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
MPSA20
hfe ≈ 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 17. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
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5
50
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MPSA20
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 20
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) • RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 19. Thermal Response
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 Vdc
A train of periodical power pulses can be represented by
the model as shown in Figure 20. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 19 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
19 by the steady state value RqJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor
Application Note AN569/D, available on our website at
www.onsemi.com.
103
102
ICEO
101
ICBO
AND
100
ICEX @ VBE(off) = 3.0 Vdc
10−1
10−2
−4
0
−2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 21.
IC, COLLECTOR CURRENT (mA)
400
1.0 ms
200
100
TC = 25°C
TA = 25°C
40
dc
20
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
2.0
10 ms
1.0 s
dc
60
4.0
The safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 22 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.
TJ(pk) may be calculated from the data in Figure 19. At
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
100 ms
4.0
6.0
8.0
10
20
40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 22.
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6
MPSA20
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSA20/D
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