Amplifier Transistor NPN

NPN − BC368; PNP − BC369
Amplifier Transistors
Voltage and Current are Negative for
PNP Transistors
Features
http://onsemi.com
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
20
Vdc
Collector − Emitter Voltage
VCES
25
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
TO−92
CASE 29
STYLE 14
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
BC36
8
AYWW G
G
BC
369
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
COLLECTOR
2
COLLECTOR
2
3
BASE
3
BASE
NPN
1
EMITTER
ORDERING INFORMATION
PNP
1
EMITTER
Device
Package
Shipping
BC368G
TO−92
(Pb−Free)
5000 Units / Bulk
BC368ZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
BC369ZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6
1
Publication Order Number:
BC368/D
NPN − BC368; PNP − BC369
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
20
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mA, IE = 0 )
V(BR)CBO
25
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 100 mA, IC = 0)
V(BR)EBO
5.0
−
−
Vdc
−
−
−
−
10
1.0
mAdc
mAdc
−
−
10
mAdc
50
85
60
−
−
−
−
375
−
fT
65
−
−
MHz
Collector−Emitter Saturation Voltage
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
−
−
0.5
V
Base−Emitter On Voltage
(IC = 1.0 A, VCE = 1.0 V)
VBE(on)
−
−
1.0
V
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
hFE
BC368, 369
Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
http://onsemi.com
2
−
NPN − BC368; PNP − BC369
1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
hFE, CURRENT GAIN
200
100
70
50
20
VCE = 1.0 V
TJ = 25°C
10
20
200
50
100
IC, COLLECTOR CURRENT (mA)
500
1000
TJ = 25°C
0.8
0.6
1000 mA
500 mA
0.2
IC = 10 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IB, BASE CURRENT (mA)
250 mA
20
50 100
Figure 2. Collector Saturation Region
TJ = 25°C
θ VB , TEMPERATURE COEFFICIENT (mV/ °C)
−0.8
1.0
VBE(sat) @ IC/IB = 10
0.8
V, VOLTAGE (VOLTS)
100 mA
0.4
Figure 1. DC Current Gain
VBE(on) @ VCE = 1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1.0 2.0
5.0 10 20
50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
−1.2
−1.6
−2.0
qVB for VBE
−2.4
−2.8
1.0 2.0
5.0 10 20
50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
Figure 3. “On” Voltages
300
160
TJ = 25°C
200
C, CAPACITANCE (pF)
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
50 mA
100
70
VCE = 10 V
TJ = 25°C
f = 20 MHz
50
30
10
20
50
120
80
Cibo
40
Cobo
100
200
500
0
Cobo
Cibo
1000
5.0
1.0
10
2.0
15
3.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current−Gain — Bandwidth Product
Figure 6. Capacitance
http://onsemi.com
3
20
4.0
25
5.0
NPN − BC368; PNP − BC369
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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4
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BC368/D
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