NPN − BC368; PNP − BC369 Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features http://onsemi.com • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 20 Vdc Collector − Emitter Voltage VCES 25 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range TO−92 CASE 29 STYLE 14 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAMS THERMAL CHARACTERISTICS BC36 8 AYWW G G BC 369 AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN 1 EMITTER ORDERING INFORMATION PNP 1 EMITTER Device Package Shipping BC368G TO−92 (Pb−Free) 5000 Units / Bulk BC368ZL1G TO−92 (Pb−Free) 2000 / Ammo Pack BC369ZL1G TO−92 (Pb−Free) 2000 / Ammo Pack *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 6 1 Publication Order Number: BC368/D NPN − BC368; PNP − BC369 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 − − Vdc Collector −Base Breakdown Voltage (IC = 100 mA, IE = 0 ) V(BR)CBO 25 − − Vdc Emitter −Base Breakdown Voltage (IE = 100 mA, IC = 0) V(BR)EBO 5.0 − − Vdc − − − − 10 1.0 mAdc mAdc − − 10 mAdc 50 85 60 − − − − 375 − fT 65 − − MHz Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) − − 0.5 V Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) − − 1.0 V OFF CHARACTERISTICS Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) ICBO Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) hFE BC368, 369 Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) http://onsemi.com 2 − NPN − BC368; PNP − BC369 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) hFE, CURRENT GAIN 200 100 70 50 20 VCE = 1.0 V TJ = 25°C 10 20 200 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 TJ = 25°C 0.8 0.6 1000 mA 500 mA 0.2 IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 250 mA 20 50 100 Figure 2. Collector Saturation Region TJ = 25°C θ VB , TEMPERATURE COEFFICIENT (mV/ °C) −0.8 1.0 VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 100 mA 0.4 Figure 1. DC Current Gain VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) −1.2 −1.6 −2.0 qVB for VBE −2.4 −2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 4. Temperature Coefficient Figure 3. “On” Voltages 300 160 TJ = 25°C 200 C, CAPACITANCE (pF) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 50 mA 100 70 VCE = 10 V TJ = 25°C f = 20 MHz 50 30 10 20 50 120 80 Cibo 40 Cobo 100 200 500 0 Cobo Cibo 1000 5.0 1.0 10 2.0 15 3.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current−Gain — Bandwidth Product Figure 6. Capacitance http://onsemi.com 3 20 4.0 25 5.0 NPN − BC368; PNP − BC369 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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