Amplifier Transistor NPN

2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector − Emitter Voltage
Value
VCEO
2N5550
2N5551
Collector − Base Voltage
Vdc
140
160
VCBO
2N5550
2N5551
Emitter − Base Voltage
1
EMITTER
Vdc
160
180
VEBO
6.0
Vdc
Collector Current − Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
2
BASE
Unit
TO−92
CASE 29
STYLE 1
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
2N
555x
AYWW G
G
x
= 0 or 1
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5550/D
2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
140
160
−
−
Vdc
160
180
−
−
Vdc
6.0
−
Vdc
−
−
−
−
100
50
100
50
nAdc
−
50
nAdc
60
80
60
80
20
30
−
−
250
250
−
−
−
−
−
−
0.15
0.25
0.20
Vdc
−
−
−
1.0
1.2
1.0
Vdc
fT
100
300
MHz
Cobo
−
6.0
pF
−
−
30
20
50
200
−
−
10
8.0
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
2N5550
2N5551
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
V(BR)CBO
2N5550
2N5551
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
2N5550
2N5551
2N5550
2N5551
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
hFE
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Both Types
2N5550
2N5551
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Both Types
2N5550
2N5551
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
2N5550
2N5551
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
pF
NF
2N5550
2N5551
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
−
dB
2N5550, 2N5551
500
h FE , DC CURRENT GAIN
300
200
VCE = 1.0 V
VCE = 5.0 V
TJ = 125°C
25°C
100
−55 °C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
101
1.0
TJ = 25°C
100
10−1
0.8
TJ = 125°C
10−2
IC = ICES
75°C
REVERSE
10−3
FORWARD
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
25°C
10−4
10−5
0.4
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
VCE(sat) @ IC/IB = 10
0
0.3
0.2 0.1
0
0.1
0.2 0.3
0.4
VBE, BASE−EMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
Figure 3. Collector Cut−Off Region
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
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3
50
100
θV, TEMPERATURE COEFFICIENT (mV/°C)
2N5550, 2N5551
2.5
2.0
TJ = − 55°C to +135°C
1.5
1.0
qVC for VCE(sat)
0.5
0
− 0.5
− 1.0
qVB for VBE(sat)
− 1.5
− 2.0
− 2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
50
100
Figure 5. Temperature Coefficients
100
70
50
Vin
100
10 ms
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 mF
VCC
30 V
3.0 k
RC
RB
Vout
5.1 k
Vin
C, CAPACITANCE (pF)
VBB
−8.8 V
10.2 V
1N914
100
TJ = 25°C
30
20
10
Cibo
7.0
5.0
Cobo
3.0
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
0.3
3.0
5.0 7.0
10
20
Figure 7. Capacitances
1000
5000
IC/IB = 10
TJ = 25°C
500
2000
t, TIME (ns)
100
td @ VEB(off) = 1.0 V
30
VCC = 120 V
tf @ VCC = 30 V
500
300
200
20
10
0.2 0.3 0.5
IC/IB = 10
TJ = 25°C
1000
tr @ VCC = 30 V
50
tf @ VCC = 120 V
3000
tr @ VCC = 120 V
300
t, TIME (ns)
2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
200
0.5 0.7 1.0
ts @ VCC = 120 V
100
1.0
2.0 3.0 5.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
100
50
0.2 0.3 0.5
200
Figure 8. Turn−On Time
1.0 2.0 3.0 5.0
10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn−Off Time
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4
100
200
2N5550, 2N5551
ORDERING INFORMATION
Package
Shipping†
2N5550G
TO−92
(Pb−Free)
5000 Units / Bulk
2N5550RLRPG
TO−92
(Pb−Free)
2000 / Tape & Ammo Box
2N5551G
TO−92
(Pb−Free)
5000 Units / Bulk
2N5551RL1G
TO−92
(Pb−Free)
2N5551RLRAG
TO−92
(Pb−Free)
2N5551RLRPG
TO−92
(Pb−Free)
2N55551ZL1G
TO−92
(Pb−Free)
Device
2000 / Tape & Reel
2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
2N5550, 2N5551
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
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For additional information, please contact your local
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2N5550/D
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