Amplifier Transistor NPN

2N5088, 2N5089
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
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3 COLLECTOR
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector − Emitter Voltage
Value
Unit
VCEO
2N5088
2N5089
Collector − Base Voltage
Vdc
VCBO
2N5088
2N5089
Emitter − Base Voltage
Vdc
35
30
VEBO
3.0
Vdc
Collector Current − Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1 EMITTER
30
25
TO−92
CASE 29
STYLE 1
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. RqJA is measured with the device soldered into a typical printed circuit board.
1
12
2N
508x
AYWW G
G
x = 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping †
2N5088G
TO−92
(Pb−Free)
5000 Units/Bulk
2N2088RLRAG
TO−92
(Pb−Free)
2000/Tape & Reel
2N5089G
TO−92
(Pb−Free)
5000 Units/Bulk
TO−92
2000/Tape & Reel
Device
2N2089RLRE
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N5088/D
2N5088, 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
30
25
−
−
35
30
−
−
−
−
50
50
−
−
50
100
2N5088
2N5089
300
400
900
1200
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
350
450
−
−
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
2N5088
2N5089
300
400
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
2N5088
2N5089
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Vdc
V(BR)CBO
2N5088
2N5089
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Vdc
ICBO
2N5088
2N5089
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
nAdc
IEBO
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
−
0.5
Vdc
Base −Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
VBE(on)
−
0.8
Vdc
fT
50
−
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
4.0
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
10
pF
350
450
1400
1800
−
−
3.0
2.0
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
2N5088
2N5089
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
2N5088
2N5089
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
RS
in
en
−
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
dB
2N5088, 2N5089
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS ≈ 0
IC = 10 mA
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
20
3.0 mA
10
1.0 mA
7.0
5.0
RS ≈ 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 mA
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
IC = 10 mA
3.0
3.0 mA
1.0 mA
1.0
0.7
0.5
300 mA
100 mA
0.3
0.2
0.1
RS ≈ 0
10
20
10 mA
50 100 200
5.0
10
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1
0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
NF, NOISE FIGURE (dB)
In, NOISE CURRENT (pA)
10
7.0
5.0
100 kHz
16
BANDWIDTH = 10 Hz to 15.7 kHz
12
500 mA
8.0
IC = 1.0 mA
100 mA
10 mA
4.0
30 mA
0
10
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
20
Figure 4. Noise Current
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
100 mA
100
70
50
NF, NOISE FIGURE (dB)
VT, TOTAL NOISE VOLTAGE (nV)
300
200
3.0 mA
1.0 mA
30
300 mA
20
10
7.0
5.0
30 mA
10 mA
16
IC = 10 mA
3.0 mA
1.0 mA
12
300 mA
8.0
100 mA
30 mA
4.0
10 mA
BANDWIDTH = 1.0 Hz
3.0
0
10
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
10
Figure 6. Total Noise Voltage
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
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3
h FE , DC CURRENT GAIN (NORMALIZED)
2N5088, 2N5089
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
−55 °C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
1.0
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
2.0
3.0
5.0
10
Figure 8. DC Current Gain
−0.4
RθVBE, BASE−EMITTER
TEMPERATURE COEFFICIENT (mV/°C)
1.0
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
−0.8
−1.2
TJ = 25°C to 125°C
−1.6
−2.0
−55 °C to 25°C
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
−2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25°C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50 100
Figure 10. Temperature Coefficients
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 9. “On” Voltages
20
50
100
Figure 11. Capacitance
500
300
200
100
VCE = 5.0 V
TJ = 25°C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 12. Current−Gain — Bandwidth Product
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4
2N5088, 2N5089
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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