Amplifier Transistor NPN

MMBT6428LT1G,
MMBT6429LT1G,
NSVMMBT6429LT1G
Amplifier Transistors
NPN Silicon
http://onsemi.com
Features
COLLECTOR
3
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
3
MAXIMUM RATINGS
Rating
Symbol
6428LT1
6429LT1
Unit
Collector −Emitter Voltage
VCEO
50
45
Vdc
Collector −Base Voltage
VCBO
60
55
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Collector Current − Continuous
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
XXX MG
G
1
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
Value
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
XXX = Specific Device Code
MMBT6428LT1 − 1KM
NSV/MMBT6429LT1 − M1L
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBT6428LT1G
SOT−23
(Pb−Free)
3000 Tape &
Reel
MMBT6429LT1G
SOT−23
(Pb−Free)
3000 Tape &
Reel
NSVMMBT6429LT1G SOT−23
(Pb−Free)
3000 Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 6
1
Publication Order Number:
MMBT6428LT1/D
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
50
45
−
−
60
55
−
−
−
0.1
−
0.01
−
0.01
250
500
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
MMBT6428
MMBT6429 / NSVMMBT6429
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
MMBT6428
MMBT6429 / NSVMMBT6429
V(BR)CEO
V(BR)CBO
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
hFE
−
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
250
500
650
1250
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
250
500
−
−
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
250
500
−
−
−
−
0.2
0.6
0.56
0.66
100
700
−
3.0
−
8.0
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
VBE(on)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
MHz
pF
pF
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS ≈ 0
IC = 10 mA
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
20
3.0 mA
10
1.0 mA
7.0
5.0
RS ≈ 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 mA
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
IC = 10 mA
3.0 mA
1.0 mA
300 mA
0.3
100 mA
0.2
RS ≈ 0
0.1
10
20
10 mA
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
NF, NOISE FIGURE (dB)
In, NOISE CURRENT (pA)
10
7.0
5.0
100 kHz
BANDWIDTH = 10 Hz to 15.7 kHz
12
500 mA
8.0
IC = 1.0 mA
100 mA
10 mA
4.0
30 mA
0
10
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
20
Figure 4. Noise Current
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 mA
100
70
50
NF, NOISE FIGURE (dB)
VT, TOTAL NOISE VOLTAGE (nV)
300
200
3.0 mA
1.0 mA
30
300 mA
20
10
7.0
5.0
30 mA
10 mA
IC = 10 mA
3.0 mA
1.0 mA
12
300 mA
8.0
100 mA
30 mA
4.0
10 mA
BANDWIDTH = 1.0 Hz
0
3.0
10
20
10
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
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3
h FE, DC CURRENT GAIN (NORMALIZED)
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
-55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
0.1
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
RθVBE, BASE-EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
-0.4
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
-0.8
-1.2
TJ = 25°C to 125°C
-1.6
-2.0
-55°C to 25°C
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
-2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25°C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50 100
Figure 10. Temperature Coefficients
50
100
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 9. “On” Voltages
20
Figure 11. Capacitance
500
300
200
100
VCE = 5.0 V
TJ = 25°C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 12. Current−Gain — Bandwidth Product
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4
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
PACKAGE DIMENSIONS
SOT−23 (TO236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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MMBT6428LT1/D
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