Amplifier Transistor PNP

MPS4126
Amplifier Transistor
PNP Silicon
Features
• This is a Pb−Free Device*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCE
−25
Vdc
Collector −Base Voltage
VCB
−25
Vdc
Emitter −Base Voltage
VEB
−4.0
Vdc
Collector Current − Continuous
IC
−200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
−55 to +150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
2
BASE
1
EMITTER
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
TO−92
CASE 29
STYLE 1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MPS
4126
AYWW G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS4126RLRAG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 4
1
Package
TO−92
(Pb−Free)
Shipping†
2,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPS4126/D
MPS4126
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−25
−
−25
−
−4.0
−
−
−50
−
−50
120
60
360
−
−
−0.4
−
−0.95
170
−
−
4.5
−
11.5
120
480
−
4.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mA, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −10 mA, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IC = 0, IE = −10 mA)
V(BR)EBO
Collector Cutoff Current
(VCB = −20 V, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −3.0 V, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −2.0 mA, VCE = −1.0 V)
(IC = −50 mA, VCE = −1.0 V)
hFE
Collector −Emitter Saturation Voltage
(IC = −50 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −50 mA, IB = −5.0 mA)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mA, VCE = −20 V, f = 100 MHz)
fT
Output Capacitance
(VCB = −5.0 V, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = −0.5 V, IC = 0, f = 1.0 MHz)
Cib
Small−Signal Current Gain
(IC = −2.0 mA, VCE = 1.0 V, f = 1.0 kHz)
hfe
Noise Figure
(IC = −100 mA, VCE = −5.0 V, RS = 1.0 kW, f = 1.0 kHz)
NF
http://onsemi.com
2
MHz
pF
pF
−
dB
MPS4126
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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3
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For additional information, please contact your local
Sales Representative
MPS4126/D
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