Amplifier Transistor PNP

2N5087
Amplifier Transistor
PNP Silicon
Features
• These are Pb−Free Devices*
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3 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
50
Vdc
Collector−Base Voltage
VCBO
50
Vdc
Emitter−Base Voltage
VEBO
3.0
Vdc
Collector Current − Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
2
BASE
1 EMITTER
TO−92
CASE 29
STYLE 1
1
12
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
5087
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
2N5087G
TO−92
(Pb−Free)
5000 Units / Bulk
2N5087RLRAG
TO−92
(Pb−Free)
2000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 5
1
Publication Order Number:
2N5087/D
2N5087
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
50
−
50
−
−
50
−
50
250
250
250
800
−
−
−
0.3
−
0.85
40
−
−
4.0
250
900
−
−
2.0
2.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
ICBO
IEBO
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
hFE
VCE(sat)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Small−Signal Current Gain
Noise Figure
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 10 Hz/15.7 kHz)
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
fT
Ccb
hfe
NF
MHz
pF
−
dB
2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 mA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 mA
3.0
100 mA
300 mA
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
3.0
2.0
300 mA
1.0
0.7
0.5
100 mA
30 mA
0.3
0.2
1.0
10 mA
0.1
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
10k
10
20
50
1.0M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
1.0M
500k
BANDWIDTH = 1.0 Hz
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
500 700 1.0k
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
10k
200k
100k
50k
200
100
5.0 dB
10
5.0k
Figure 2. Noise Current
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
Figure 1. Noise Voltage
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
NF + 20 log10
20k
10k
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
ƫ
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
5.0k
2.0k
1.0k
500
ƪ
500 700 1.0k
IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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3
2N5087
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN
400
TJ = 125°C
25°C
200
-55°C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0
10
20
30
50 70 100
1.0
100
TA = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
300 mA
200 mA
150 mA
40
100 mA
20
50 mA
0
5.0 10
20
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 8. Collector Characteristics
1.4
0.2
250 mA
60
Figure 7. Collector Saturation Region
0.1
IB = 400 mA
350 mA
50
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
- 55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
100
25°C to 125°C
0
Figure 9. “On” Voltages
qVB for VBE
0.2
- 55°C to 25°C
0.5 1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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4
50
100
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
td @ VBE(off) = 0.5 V
20
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70
10
-1.0
100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
IC, COLLECTOR CURRENT (mA)
- 50 - 70 -100
Figure 12. Turn−Off Time
500
10
TJ = 25°C
TJ = 25°C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 11. Turn−On Time
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product
Figure 14. Capacitance
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
hoe , OUTPUT ADMITTANCE (m mhos)
VCE = -10 Vdc
f = 1.0 kHz
TA = 25°C
10
0.2
0.1
10
20
50
200
20
hie , INPUT IMPEDANCE (kΩ )
VCC = - 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
30
20
10
7.0
5.0
3.0
0.2
0.5
1.0 2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 15. Input Impedance
0.2
0.5 1.0 2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
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5
50
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
2N5087
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) w RqJA
TJ(pk) - TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 17. Thermal Response
IC, COLLECTOR CURRENT (mA)
400
200
100 ms
100
TC = 25°C
dc
60
1.0 s
TA = 25°C
40
dc
20
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
The safe operating area curves indicate IC−VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 17. At high case
or ambient temperatures, thermal limitations will reduce the
power than can be handled to values less than the limitations
imposed by second breakdown.
10 ms
1.0 ms
2.0
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
40
4.0
6.0 8.0 10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
A train of periodical power pulses can be represented by
the model as shown in Figure 19. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 17 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
17 by the steady state value RqJA.
Example:
The 2N5087 is dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
Figure 18. Active−Region Safe Operating Area
104
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
10-1
10-2
- 40 - 20
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Typical Collector Leakage Current
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6
2N5087
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
--STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N5087/D
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