Amplifier Transistors

BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
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Features
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Collector - Emitter Voltage
Value
VCEO
BC556
BC557
BC558
Collector - Base Voltage
Vdc
VCBO
Vdc
−80
−50
−30
VEBO
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−100
−200
mAdc
Base Current − Peak
IBM
−200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
3
EMITTER
−65
−45
−30
BC556
BC557
BC558
Emitter - Base Voltage
2
BASE
Unit
TO−92
CASE 29
STYLE 17
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
THERMAL CHARACTERISTICS
BC
55xx
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
= 6B, 7A, 7B, 7C, or 8B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BC556B/D
BC556B, BC557A, B, C, BC558B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−65
−45
−30
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
−
−
−
120
120
180
420
−
−
−
90
150
270
−
170
290
500
120
180
300
−
−
−
800
220
460
800
−
−
−
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
−
−
−0.7
−1.0
−
−
−0.55
−
−0.62
−0.7
−0.7
−0.82
−
−
−
280
320
360
−
−
−
−
3.0
6.0
−
−
−
2.0
2.0
2.0
10
10
10
125
125
240
450
−
−
−
−
900
260
500
900
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −100 mAdc)
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
Collector−Emitter Leakage Current
(VCES = −40 V)
(VCES = −20 V)
(VCES = −20 V, TA = 125°C)
V(BR)CEO
BC556
BC557
BC558
V
V(BR)CBO
BC556
BC557
BC558
V
V(BR)EBO
BC556
BC557
BC558
V
ICES
BC556
BC557
BC558
BC556
BC557
BC558
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 V)
(IC = −2.0 mAdc, VCE = −5.0 V)
(IC = −100 mAdc, VCE = −5.0 V)
hFE
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Output Capacitance
(VCB = −10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 V,
RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Cob
MHz
NF
BC556
BC557
BC558
dB
hfe
BC557
A Series Device
B Series Devices
C Series Devices
−
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
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2
pF
BC556B, BC557A, B, C, BC558B
BC557/BC558
−1.0
1.5
TA = 25°C
−0.9
VCE = −10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
0.3
VCE(sat) @ IC/IB = 10
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
IC, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
−100 −200
1.0
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
IC = −50 mA
IC = −200 mA
IC = −100 mA
IC = −20 mA
−0.4
0
−0.02
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−10 −20
−0.1
−1.0
IB, BASE CURRENT (mA)
−0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−10
−1.0
IC, COLLECTOR CURRENT (mA)
−100
Figure 4. Base−Emitter Temperature Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
−50 −100
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−20 −30 −40
400
300
200
150
VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC556B, BC557A, B, C, BC558B
BC556
TJ = 25°C
VCE = −5.0 V
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
−1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
−0.6
VBE @ VCE = −5.0 V
−0.4
−0.2
0.2
VCE(sat) @ IC/IB = 10
0
−0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
−2.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
−1.6
−1.2
IC =
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0
−10
−20
−1.0
−1.4
−1.8
−2.6
−3.0
−0.2
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
−0.1 −0.2
−0.5
−1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
−0.5 −1.0
−50
−5.0 −10 −20
−2.0
IC, COLLECTOR CURRENT (mA)
−100 −200
Figure 10. Base−Emitter Temperature Coefficient
40
6.0
−55°C to 125°C
−2.2
Figure 9. Collector Saturation Region
20
qVB for VBE
VCE = −5.0 V
500
200
100
50
20
−100
−1.0
−10
IC, COLLECTOR CURRENT (mA)
−50 −100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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4
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
BC556B, BC557A, B, C, BC558B
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
P(pk)
SINGLE PULSE
t1
t2
0.03
DUTY CYCLE, D = t1/t2
0.02
0.01
ZqJC(t) = (t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
Figure 13. Thermal Response
−200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
−100
TA = 25°C
−50
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
TJ = 25°C
BC558
BC557
BC556
−10
−5.0
−2.0
−1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region − Safe Operating Area
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5
10
BC556B, BC557A, B, C, BC558B
ORDERING INFORMATION
Package
Shipping†
BC556BG
TO−92
(Pb−Free)
5000 Units / Bulk
BC556BZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC557AZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC557BG
TO−92
(Pb−Free)
5000 Units / Bulk
Device
BC557BRL1
TO−92
2000 / Tape & Reel
BC557BRL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC557BZL1G
TO−92
(Pb−Free)
BC557CG
TO−92
(Pb−Free)
5000 Units / Bulk
BC557CZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC558BRLG
TO−92
(Pb−Free)
2000 / Tape & Reel
BC558BRL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC558BZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
BC556B, BC557A, B, C, BC558B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your local
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BC556B/D
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