150V, 10A SWITCHMODE Power Rectifier

MBRF10H150CTG
SWITCHMODE™
Power Rectifier
150 V, 10 A
Features and Benefits
•
•
•
•
•
•
http://onsemi.com
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capability
10 A Total (5 A Per Diode Leg)
Guard−Ring for Stress Protection
This is a Pb−Free Device
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 150 VOLTS
1
2, 4
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
MARKING
DIAGRAM
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−220 FULLPAK]
CASE 221D
STYLE 3
1
2
AYWW
B10H150G
AKA
3
MAXIMUM RATINGS
A
Y
WW
B10H150
G
AKA
Please See the Table on the Following Page
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
April, 2008 − Rev. 1
1
Publication Order Number:
MBRF10H150CT/D
MBRF10H150CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
150
V
IF(AV)
5
10
A
IFSM
150
A
Operating Junction Temperature (Note 1)
TJ
−20 to +150
°C
Storage Temperature
Tstg
−65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/ms
> 400
> 8000
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 142°C
(Per Leg)
(Per Device)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
− Junction−to−Case
Symbol
Value
Unit
RqJC
2.5
°C/W
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5 A, TC = 25°C)
(IF = 5 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
0.85
0.63
V
0.69
45
20
mA
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
MBRF10H150CTG
Package Type
Shipping†
TO−220FP
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
MBRF10H150CTG
100
TJ = 100°C
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.2
0.4 0.6
0.8
1
1.2 1.4 1.6 1.8
2
2.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
TJ = 100°C
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.2
0.4 0.6
0.8
1
1.2 1.4 1.6 1.8
2
2.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−02
1.0E−01
IR, REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
TJ = 125°C
1.0E−03
TJ = 125°C
1.0E−02
TJ = 100°C
1.0E−04
TJ = 100°C
1.0E−03
1.0E−05
1.0E−04
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−05
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
10
9
8
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
1.0E−07
1.0E−06
0 10 20 30 40 50 60 70 80 90 100110 120130140150
0 10 20 30 40 50 60 70 80 90 100110 120130140150
dc
7
6
SQUARE WAVE
5
4
3
2
1
0
125
130
135
140
145
150
155
10
TJ = 150°C
9
8
7
6
5
SQUARE
4
3
dc
2
1
0
0
1
2
3
4
5
6
7
8
9
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
http://onsemi.com
3
10
MBRF10H150CTG
1000
C, CAPACITANCE (pF)
TJ = 25°C
100
10
0
50
100
150
VR, REVERSE VOLTAGE (V)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
10
D = 0.5
1
0.1
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
t1, TIME (sec)
Figure 8. Thermal Response Junction−to−Case for MBRF10H150CTG
http://onsemi.com
4
100
1000
MBRF10H150CTG
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRF10H150CT/D
Similar pages