200 mA, 30 V Schottky Barrier Diode

NSR02F30MX
200 mA, 30 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in a spacing saving
x3DFN 0201 package ideal for space constraint applications.
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Features
•
•
Low Forward Voltage Drop − 500 mV (Typ.) @ IF = 200 mA
Low Reverse Current – 20 mA (Typ.) @ VR = 30 V
200 mA of Continuous Forward Current
ESD Rating − Human Body Model: Class 2
− Machine Model: Class M3
− CDM: Class IV
High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
Cathode
2
Anode
MARKING
DIAGRAM
PIN 1
J
•
•
•
•
X3DFN2
CASE 152AF
M
Typical Applications
•
•
•
•
•
J
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping and Protection
M
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
= Specific Device Code
= (Rotated 180°)
= Month Code
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
200
mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
2
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
1
A
ESD Rating: Human Body Model
Machine Model
ESD
2−4
>400
kV
V
Device
Package
Shipping†
NSR02F30MXT5G
X3DFN
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 1
1
Publication Order Number:
NSR02F30MX/D
NSR02F30MX
Table 1. THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25_C
RθJA
PD
695
180
°C/W
mW
Storage Temperature Range
Tstg
−55 to +125
°C
TJ
+125
°C
Junction Temperature
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06″ thick single sided. Operating to steady state.
Table 2. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Test Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Reverse Leakage
VR = 10 V
IR
−
−
15
mA
Reverse Leakage
VR = 30 V
IR
−
20
50
mA
Forward Voltage
IF = 1 mA
VF
−
155
Forward Voltage
IF = 10 mA
VF
−
250
290
mV
Forward Voltage
IF = 100 mA
VF
−
375
490
mV
Forward Voltage
IF = 200 mA
VF
−
500
600
mV
Total Capacitance
VR = 1.0 V, f = 1.0 MHz
CT
−
6
8
pF
Reverse Recovery Time
IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 2
trr
−
2.4
3
ns
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Peak Forward Recover Voltage Definition
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2
mV
NSR02F30MX
TYPICAL CHARACTERISTICS
1.E−01
125°C
IR, REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
1000
100
125°C
150°C
10
85°C
25°C
−25°C
1
1.E−02
1.E−04
25°C
1.E−05
1.E−06
−25°C
1.E−07
1.E−08
0.1
0
0.1
0.2
0.3
0.4
0
0.5
5
10
15
20
25
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Forward Voltage
Figure 4. Leakage Current
10
30
12
9
TA = 25°C prior to surge
Based on square wave current
TA = 25°C
10
8
7
8
6
IFSM (A)
CT, TOTAL CAPACITANCE (pF)
85°C
1.E−03
5
4
6
4
3
2
2
1
0
0
0
5
10
15
20
25
0.001 0.01
30
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
TP (mSec)
Figure 5. Total Capacitance
Figure 6. Forward Surge Current
1000
1000
Duty Cycle = 50%
R(t) (°C/W)
100
20%
10%
5%
2%
10
1%
1
Single Pulse
0.1
0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 7. Thermal Response
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3
1
10
100
1000
NSR02F30MX
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A B
D
PIN 1
INDICATOR
(OPTIONAL)
DIM
A
A1
b
D
E
e
L2
E
TOP VIEW
0.05 C
A
RECOMMENDED
MOUNTING FOOTPRINT*
0.05 C
2X
A1
SIDE VIEW
MILLIMETERS
MIN
MAX
0.25
0.33
−−−
0.05
0.22
0.28
0.58
0.66
0.28
0.36
0.355 BSC
0.17
0.23
C
SEATING
PLANE
0.74
2X
0.30
1
e
2X
1
b
2
2X
0.31
DIMENSIONS: MILLIMETERS
2X
0.05
M
0.05
L2
M
C A B
See Application Note AND8398/D for more mounting details
C A B
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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4
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NSR02F30MX/D
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