30 V SCHOTTKY BARRIER DIODE

NSR0530P2T5G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc-dc
converter, clamping and protection applications in portable devices.
NSR0530P2 in a SOD-923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
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Features
30 V SCHOTTKY
BARRIER DIODE
•Very Low Forward Voltage Drop - 370 mV @ 100 mA
•Low Reverse Current - 1.4 mA @ 10 V VR
•500 mA of Continuous Forward Current
•Power Dissipation of 190 mW with Minimum Trace
•Very High Switching Speed
•Low Capacitance - CT = 10 pF
•This is a Pb-Free Device
1
CATHODE
Typical Applications
1
MG
G
2
D = Specific Device Code
M = Month Code
G = Pb-Free Package
(Note: Microdot may be in either location)
•Mobile Handsets
•MP3 Players
•Digital Camera and Camcorders
•Notebook PCs & PDAs
•GPS
ORDERING INFORMATION
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
500
mA
Human Body Model
Machine Model
D
1
SOD-923
CASE 514AB
PLASTIC
Markets
ESD Rating:
MARKING
DIAGRAM
2
•LCD and Keypad Backlighting
•Camera Photo Flash
•Buck and Boost dc-dc Converters
•Reverse Voltage and Current Protection
•Clamping & Protection
Rating
2
ANODE
ESD
Device
Package
Shipping†
NSR0530P2T5G
SOD-923
(Pb-Free)
2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Class 3B
Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 0
1
Publication Order Number:
NSR0530P2/D
NSR0530P2T5G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction-to-Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
Junction-to-Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Symbol
Junction and Storage Temperature Range
Min
Typ
Max
Unit
RqJA
PD
520
190
°C/W
mW
RqJA
PD
175
570
°C/W
mW
TJ, Tstg
-55 to +125
°C
Typ
Max
Unit
1.4
24
10
200
0.37
0.46
0.62
1. Mounted onto a 4 in square FR-4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR-4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
mA
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR
Forward Voltage (IF = 10 mA)
(IF = 100 mA)
(IF = 500 mA)
VF
0.28
0.37
0.52
Total Capacitance
(VR = 1.0 V, f = 1 MHz)
CT
10
10,000
pF
1,000,000
100,000
Ir, REVERSE CURRENT (mA)
1000
IF, FORWARD CURRENT (mA)
V
100
10
125°C
1
0.1
85°C
0.01
0
0.1
-40°C
125°C
1000
85°C
100
25°C
10
-40°C
1
0.1
0.01
0.001
0.2
0.3
0.5
0.4
0.6
0
5
10
15
20
25
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
20
CT, TOTAL CAPACITANCE (pF)
25°C
0.001
10,000
18
TA = 25°C
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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2
30
35
30
35
NSR0530P2T5G
PACKAGE DIMENSIONS
SOD-923
CASE 514AB-01
ISSUE B
-X-
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
-YE
1
b
2
2X
0.08 (0.0032) X Y
DIM
A
b
c
D
E
HE
L
A
c
L
HE
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
0.15
0.20
0.25
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.95
1.00
1.05
0.05
0.10
0.15
MIN
0.013
0.006
0.003
0.030
0.022
0.037
0.002
INCHES
NOM
0.015
0.008
0.005
0.031
0.024
0.039
0.004
MAX
0.016
0.010
0.007
0.033
0.026
0.041
0.006
SOLDERING FOOTPRINT*
0.90
0.40
0.30
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NSR0530P2/D
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