30 V, 100 mA, Low Vf Schottky, DSN2 (0201)

NSR01F30NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current. The DSN2 (Dual Silicon
No−lead) package is a chip level package using solderable metal
contacts under the package similar to DFN style packages. The DSN
style package enables 100% utilization of the package area for active
silicon, offering a significant performance per board area advantage
compared to products in plastic molded packages. The low thermal
resistance enables designers to meet the challenging task of achieving
higher efficiency and meeting reduced space requirements.
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30 V SCHOTTKY
BARRIER DIODE
Features
•
•
•
•
•
•
•
•
1
CATHODE
Very Low Forward Voltage Drop − 370 mV @ 10 mA
Low Reverse Current − 7.0 mA @ 10 V VR
100 mA of Continuous Forward Current
ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
Very High Switching Speed
Low Capacitance − CT = 7 pF
This is a Halide−Free Device
This is a Pb−Free Device
MARKING
DIAGRAM
V130
YYY
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
V130
YYY
= Specific Device Code
= Year Code
ORDERING INFORMATION
Device
NSR01F30NXT5G
Markets
•
•
•
•
•
PIN 1
DSN2
(0201)
CASE 152AA
Typical Applications
•
•
•
•
•
2
ANODE
Package
Shipping†
DSN2
5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
100
mA
Forward Surge Current
IFSM
(60 Hz @ 1 cycle)
ESD Rating:
Human Body Model
Machine Model
A
4.0
ESD
>8.0
>400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 3
1
Publication Order Number:
NSR01F30/D
NSR01F30NXT5G
THERMAL CHARACTERISTICS
Characteristic
Max
Unit
RqJA
PD
400
312
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
170
735
°C/W
mW
Storage Temperature Range
Tstg
−40 to +125
°C
Junction Temperature
TJ
+125
°C
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Symbol
Min
Typ
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
VF
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT
Min
Typ
mA
7.0
50
V
0.37
0.50
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2
7.0
pF
NSR01F30NXT5G
TYPICAL CHARACTERISTICS
1.0E+04
10
150°C
1
150°C
1.0E+02
125°C
1.0E+01
75°C
1.0E+00
125°C
0.1
1.0E+03
Ir, REVERSE CURRENT (mA)
IF, FORWARD CURRENT (mA)
100
25°C
1.0E−01
75°C
25°C
0.01
1.0E−02
−25°C
−25°C
1.0E−03
0.001
1.0E−04
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
20
CT, TOTAL CAPACITANCE (pF)
0
TA = 25°C
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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3
25
30
25
30
NSR01F30NXT5G
PACKAGE DIMENSIONS
DSN2, 0.6x0.3, 0.4P, (0201)
CASE 152AA
ISSUE A
DIM
A
A1
b
D
E
e
L
E
0.06 C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
B
D
0.06 C
2X
TOP VIEW
MOUNTING FOOTPRINT*
0.05 C
0.28
A
2X
MILLIMETERS
MIN
MAX
0.24
0.30
0.00
0.01
0.20
0.22
0.30 BSC
0.60 BSC
0.40 BSC
0.10
0.12
0.05 C
A1
C
SEATING
PLANE
0.75
SIDE VIEW
e
1
2X
L
0.30
0.28
DIMENSIONS: MILLIMETERS
2
2X
See Application Note AND8398/D for more mounting details
b
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.05 C A B
BOTTOM VIEW
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NSR01F30/D
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