30 Volts Silicon Hot-Carrier Detector and Switching Diodes

MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes
http://onsemi.com
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Features
•
•
•
•
•
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Reverse Voltage
Forward Current (DC)
Total Device Dissipation
@ TA = 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Symbol
Value
Unit
VR
30
V
IF
200 (Max)
mA
Storage Temperature Range
May, 2013 − Rev. 7
SOT−23
2
CATHODE
1
ANODE
3
CATHODE
1
ANODE
MBD
301
AYWW G
G
4T M G
G
MW
280
200
TO−92
mW/°C
2.8
2.0
TJ
−55 to
+125
°C
Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
TO−92
1
PF
Derate above 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Operating Junction
Temperature Range
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAMS
MAXIMUM RATINGS
Rating
TO−92 2−Lead
CASE 182
STYLE 1
1
SOT−23
A
= Assembly Location
Y
= Year
WW = Work Week
4T = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBD301/D
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
Total Capacitance
(VR = 15 V, f = 1.0 MHz) Figure 1
CT
Reverse Leakage
(VR = 25 V) Figure 3
IR
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
Min
Typ
Max
30
−
−
−
0.9
1.5
−
13
200
−
0.38
0.45
−
0.52
0.6
Unit
V
pF
nAdc
Vdc
Vdc
ORDERING INFORMATION
Package
Shipping†
MBD301G
TO−92
(Pb−Free)
5,000 Units / Bulk
MMBD301LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBD301LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SMMBD301LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
400
KRAKAUER METHOD
300
200
100
0
0
0
3.0
6.0
18
9.0
12
15
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 1. Total Capacitance
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
20
Figure 2. Minority Carrier Lifetime
10
TA = 100°C
1.0
75°C
0.1
25°C
0.01
0.001
10
10
TA = -40°C
TA = 85°C
1.0
TA = 25°C
0.1
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 3. Reverse Leakage
IF(PEAK)
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
1.0
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
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3
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
1.2
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
D
ÉÉ
L
P
J
K
D
SECTION X−X
X X
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
--0.250
--0.080
0.105
--0.050
0.115
--0.135
---
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
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4
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
--6.35
--2.03
2.66
--1.27
2.93
--3.43
---
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 °
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent− Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product
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PUBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
Sales Representative
MBD301/D
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