30A, 100V Very Low Forward Voltage Trench-Based Schottky Rectifier

NTSV30H100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.471 V at IF = 5 A
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Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
1
2, 4
3
4
TO−220AB
CASE 221A
STYLE 6
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
1
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
2
3
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
AY WW
TSV30H10G
AKA
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
A
Y
WW
AKA
G
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
NTSV30H100CT/D
NTSV30H100CT
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 116°C)
(Rated VR, TC = 133°C)
Per device
Per diode
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 108°C)
(Rated VR, Square Wave, 20 kHz, TC = 133°C)
Per device
Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IF(AV)
A
30
15
IFRM
A
60
30
IFSM
125
A
Operating Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Typical Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
1.4
47
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 7.5 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 7.5 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Typ
Max
0.517
0.579
0.742
−
−
0.85
0.471
0.539
0.651
−
−
0.72
3.9
4.2
15.2
10.0
Unit
V
mA
mA
95
30
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSV30H100CTG
Package
Shipping
TO−220AB
(Pb−Free)
50 Units / Rail
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2
NTSV30H100CT
TYPICAL CHARACTERISTICS
100
100
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
TA = 125°C
10
TA = 150°C
TA = 25°C
1.0
TA = −40°C
TA = 25°C
1.0
TA = −40°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E−01
1.E−01
TA = 150°C
1.E−02
TA = 150°C
1.E−02
TA = 125°C
TA = 125°C
1.E−03
1.E−03
1.E−04
1.E−04
1.E−05
TA = 25°C
1.E−05
TA = 25°C
1.E−06
1.E−06
1.E−07
TA = 150°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
TA = 125°C
10
0
10
20
30
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
1.E−07
0
20
30
40
50
70
80
90 100
Figure 4. Maximum Reverse Characteristics
10k
30
RqJC = 1.42°C/W
IF(AV), AVERAGE FORWARD
CURRENT (A)
TJ = 25°C
1k
100
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
C, JUNCTION CAPACITANCE (pF)
10
0.1
1
10
100
25
DC
20
Square Wave
15
10
5
0
40
50
60
70
80
90
100 110 120 130 140150
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Leg
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3
NTSV30H100CT
TYPICAL CHARACTERISTICS
60
30
RqJC = 1.42°C/W
50
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD
CURRENT (A)
55
dc
45
40
35
Square Wave
30
25
20
15
10
IPK/IAV = 10
25
IPK/IAV = 5
IPK/IAV = 20
20
Square Wave
15
dc
10
5
5
TJ = 150°C
0
40
50
60
70
80
90
100 110 120 130 140 150
0
0
4
8
12
16
20
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating per Leg
Figure 8. Forward Power Dissipation
24
R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
10
1 50%
20%
10%
P(pk)
0.1 5%
0.01
t1
2%
1%
0.000001
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response
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4
10
100
1000
NTSV30H100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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Sales Representative
NTSV30H100CT/D
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