40 V SCHOTTKY BARRIER DIODE

NSR0340P2T5G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0340P2 in a SOD−923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
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Features
40 V SCHOTTKY
BARRIER DIODE
Very Low Forward Voltage Drop − 420 mV @ 100 mA
Low Reverse Current − 0.6 mA @ 10 V
Continuous Forward Current − 200 mA
Power Dissipation with Minimum Trace − 190 mW
Very High Switching Speed − 3.0 ns @ 10 mA
Low Capacitance − 4 pF @ 5.0 V
This is a Pb−Free Device
1
CATHODE
Typical Applications
•
•
•
•
•
1
SOD−923
CASE 514AB
PLASTIC
Forward Current (DC)
Symbol
Value
Unit
VR
40
V
IF
200
mA
Non−Repetitive Peak Forward Surge
Current
IFSM
1.0
A
ESD Rating:
ESD
Human Body Model
Machine Model
2
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
1
MG
G
R = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
Reverse Voltage
MARKING
DIAGRAM
2
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
•
•
•
•
•
2
ANODE
R
•
•
•
•
•
•
•
Device
Package
Shipping†
NSR0340P2T5G
SOD−923
(Pb−Free)
2 mm Pitch
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Class 2
Class A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 0
1
Publication Order Number:
NSR0340P2/D
NSR0340P2T5G
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Characteristic
RqJA
PD
520
190
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
175
570
°C/W
mW
TJ, Tstg
−55 to +125
°C
Junction and Storage Temperature Range
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
DC Current
Source
+
−
750 mH
50 W Output
Pulse
Generator
0.1 mF
Min
Max
0.6
4.0
5.0
20
290
420
520
320
460
560
4.0
3.0
0V
IF
Typ
tr
10%
90%
VR
0.1 mF
tp
Pulse Generator
Output
IF
DUT
Adjust for IRM
trr
RL = 50 W
IRM
Current
Transformer
50 W Input
Oscilloscope
1.
2.
3.
4.
5.
iR(REC) = 1 mA
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
Pulse Generator transition time << trr.
IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
Unit
mA
mV
pF
ns
NSR0340P2T5G
10000
IR, REVERSE CURRENT (mA)
100
125°C
10
25°C
85°C
1
0.1
0
0.1
0.2
−40°C
0.3
0.4
0.5
1000
125°C
100
85°C
10
0.1
0.01
−40°C
0.001
0.0001
0.6
25°C
1
0
5
10
15
20
25
30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2.
Figure 3.
13
Ct, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
11
9
7
5
3
1
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Figure 4.
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3
35
40
35
40
NSR0340P2T5G
PACKAGE DIMENSIONS
SOD−923
CASE 514AB−01
ISSUE B
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
E
1
b
2
2X
0.08 (0.0032) X Y
DIM
A
b
c
D
E
HE
L
A
c
L
HE
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
0.15
0.20
0.25
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.95
1.00
1.05
0.05
0.10
0.15
MIN
0.013
0.006
0.003
0.030
0.022
0.037
0.002
INCHES
NOM
0.015
0.008
0.005
0.031
0.024
0.039
0.004
MAX
0.016
0.010
0.007
0.033
0.026
0.041
0.006
SOLDERING FOOTPRINT*
0.90
0.40
0.30
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NSR0340P2/D
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