80V, 20A SWITCHMODE POWER RECTIFIER

MBR20L80CT,
MBRF20L80CT
SWITCHMODE™
Power Rectifier
80 V, 20 A
http://onsemi.com
Features and Benefits
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
80 VOLTS
Low Power Loss/High Efficiency
High Surge Capacity
20 A Total (10 A Per Diode Leg)
These are Pb−Free Devices
Applications
1
• Power Supply − Output Rectification
• Power Management
• Instrumentation
2, 4
3
•
•
•
•
•
•
MARKING
DIAGRAM
4
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
TO−220AB
CASE 221A
PLASTIC
1
2
AYWW
B20L80G
AKA
3
MAXIMUM RATINGS
AYWW
B20L80G
AKA
Please See the Table on the Following Page
1
ISOLATED TO−220
CASE 221D
STYLE 3
2
3
A
Y
WW
B20L80
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 1
1
Publication Order Number:
MBR20L80CT/D
MBR20L80CT, MBRF20L80CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
V
Average Rectified Forward Current
(TC = 137°C)
Per Diode
Per Device
IF(AV)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
IFM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
175
A
Storage Temperature
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−20 to +150
°C
> 400
> 8000
V
A
10
20
ESD Ratings: Machine Model = C
Human Body Model = 3B
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR20L80CT)
(MBRF20L80CT)
Symbol
Value
RqJC
RqJA
RqJC
RqJA
2.0
70
4.2
75
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Symbol
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A, TJ = 25°C)
(iF = 3.0 A, TJ = 125°C)
(iF = 10 A, TJ = 25°C)
(iF = 10 A, TJ = 125°C)
(iF = 20 A, TJ = 25°C)
(iF = 20 A, TJ = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR
Min
Typ
Max
−
−
−
−
−
−
0.45
0.35
0.56
0.51
0.69
0.62
0.50
0.44
0.67
0.61
0.85
0.74
−
−
30
0.06
50
0.50
V
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Package Type
Shipping†
MBR20L80CTG
TO−220AB
(Pb−Free)
50 Units / Rail
MBRF20L80CTG
TO−220FP
(Pb−Free)
50 Units / Rail
Device Order Number
http://onsemi.com
2
Unit
MBR20L80CT, MBRF20L80CT
100
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
100
10
125°C
1.0
150°C
0.1
0
TJ = 25°C
0.2
0.4
0.6
0.8
1.0
1.2
125°C
1.0
150°C
TJ = 25°C
0.1
0.0
1.4
1.0
1.2
1.4
1.0E+00
150°C
IR, REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
1.0E−01
150°C
1.0E−02
125°C
125°C
1.0E−03
1.0E−04
1.0E−04
1.0E−05
1.0E−05
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−06
0
10
20
30
40
50
60
70
80
1.0E−07
0
VR, REVERSE VOLTAGE (V)
10
20
30
40
50
60
70
80
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Voltage
Figure 4. Maximum Reverse Voltage
20
6
RqJC = 2°C/W
dc
14
SQUARE WAVE
10
8
6
4
2
IF, AVERAGE FORWARD CURRENT
(A)
IF, AVERAGE FORWARD CURRENT
(A)
0.8
Figure 2. Maximum Forward Voltage
1.0E−03
12
0.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.0E−02
16
0.4
Figure 1. Typical Forward Voltage
1.0E−01
18
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.0E+00
1.0E−07
10
0
110 115 120 125 130 135 140 145 150 155 160
RqJA = 70°C/W
5
dc
4
3
SQUARE WAVE
2
1
0
0
20
40
60
80
100
120
140 160
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case per Leg −
MBR20L80CTG
Figure 6. Current Derating, Ambient per Leg −
MBR20L80CTG
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3
MBR20L80CT, MBRF20L80CT
6
dc
16
14
12
SQUARE WAVE
10
8
6
4
2
0
80
90
100
110
120
130
140
RqJC = 75°C/W
IF, AVERAGE FORWARD CURRENT
(A)
RqJC = 4.2°C/W
18
150
5
4
dc
3
SQUARE WAVE
2
1
0
160
0
20
80
100
120
140 160
Figure 7. Current Derating, Case per Leg −
MBRF20L80CTG
Figure 8. Current Derating, Ambient per Leg −
MBRF20L80CTG
10000
TJ = 25°C
TJ = 150°C
14
12
SQUARE WAVE
10
dc
8
6
4
1000
100
2
0
0
2
4
6
8
10 12 14 16 18
IO, AVERAGE FORWARD CURRENT (A)
10
20
0
10
20
30
40
50
60
VR, REVERSE VOLTAGE (V)
Figure 9. Forward Power Dissipation
R(t), TRANSIENT THERMAL RESISTANCE
60
TA, AMBIENT TEMPERATURE (°C)
18
16
40
TC, CASE TEMPERATURE (°C)
C, CAPACITANCE (pF)
PFO, AVERAGE POWER DISSIPATION (W)
IF, AVERAGE FORWARD CURRENT
(A)
20
70
80
Figure 10. Capacitance
100
D = 0.5
10
0.2
0.1
1
0.05
P(pk)
0.01
t1
0.1
t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
DUTY CYCLE, D = t1/t2
0.001
0.1
0.01
1
10
t1, TIME (sec)
Figure 11. Thermal Response Junction−to−Ambient for MBR20L80CT
http://onsemi.com
4
100
1000
R(t), TRANSIENT THERMAL RESISTANCE
MBR20L80CT, MBRF20L80CT
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
1
0.1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 12. Thermal Response Junction−to−Case for MBR20L80CT
10
D = 0.5
1.0
0.1
0.2
0.1
0.05
0.02
P(pk)
0.01
0.01
t1
SINGLE PULSE
0.001
0.000001
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.1
0.01
1.0
ZqJC(t) = r(t) RqJC
RqJC = 4.2°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 13. Thermal Response Junction−to−Case for MBRF20L80CT
100
10
D = 0.5
0.2
0.1
0.05
0.02
1.0
0.01
P(pk)
0.1
0.01
0.001
0.000001
t1
SINGLE PULSE
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
0.1
1.0
ZqJC(t) = r(t) RqJC
RqJC = 4.2°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
t1, TIME (sec)
Figure 14. Thermal Response Junction−to−Ambient for MBRF20L80CT
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5
100
1000
MBR20L80CT, MBRF20L80CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
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6
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBR20L80CT, MBRF20L80CT
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MBR20L80CT/D
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