Dual Hot Carrier Mixer Diode

MMBD352LT1G,
MMBD353LT1G,
NSVMMBD353LT1G,
MMBD354LT1G,
NSVMMBD354LT1G,
MMBD355LT1G
http://onsemi.com
Dual Hot Carrier Mixer
Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
1
ANODE
Features





SOT−23 (TO−236)
CASE 318
Very Low Capacitance − Less Than 1.0 pF @ Zero V
Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
3
CATHODE/ANODE
MMBD352LT1G
STYLE 11
1
CATHODE
3
CATHODE/ANODE
Continuous Reverse Voltage
Symbol
Value
Unit
VR
7.0
VCC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
RqJA
417
C/W
TJ, Tstg
−55 to +150
C
PD
RqJA
PD
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1 ANODE
3
CATHODE
2 ANODE
MMBD354LT1G
NSVMMBD354LT1G
STYLE 9
1 CATHODE
ANODE 3
2 CATHODE
THERMAL CHARACTERISTICS
Characteristic
2
ANODE
MMBD353LT1G
NSVMMBD353LT1G
STYLE 19
MAXIMUM RATINGS (EACH DIODE)
Rating
2
CATHODE
1
MMBD355LT1G
STYLE 12
MARKING DIAGRAM
Mxx M G
G
1
Mxx = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
Publication Order Number:
MMBD352LT1/D
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G,
NSVMMBD354LT1G, MMBD355LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Rating
Symbol
Forward Voltage
(IF = 10 mAdc)
VF
Reverse Leakage Current (Note 3)
(VR = 3.0 V)
(VR = 7.0 V)
IR
Capacitance
(VR = 0 V, f = 1.0 MHz)
C
Min
Max
−
0.60
−
−
0.25
10
−
1.0
Unit
V
mA
pF
3. For each individual diode while the second diode is unbiased.
ORDERING INFORMATION
Device
MMBD352LT1G
MMBD352LT3G
MMBD353LT1G
NSVMMBD353LT1G
MMBD353LT3G
MMBD354LT1G
NSVMMBD354LT1G
MMBD355LT1G
Marking
Package
Shipping†
M5G
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
M5G
SOT−23
(Pb−Free)
10,000 Units / Tape & Reel
M4F
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
M4F
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
M4F
SOT−23
(Pb−Free)
10,000 Units / Tape & Reel
M6H
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
M6H
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
MJ1
SOT−23
(Pb−Free)
3,000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TYPICAL CHARACTERISTICS
1.0
TA = 85C
C, CAPACITANCE (pF)
I F, FORWARD CURRENT (mA)
100
10
TA = -40C
1.0
TA = 25C
0.1
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
0.7
0.8
0
1.0
2.0
3.0
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Capacitance
http://onsemi.com
2
4.0
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G,
NSVMMBD354LT1G, MMBD355LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
L1
VIEW C
MMBD352LT1G
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
SOLDERING FOOTPRINT
MMBD353LT1G
NSVMMBD353LT1G
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
0.95
0.037
0.95
0.037
MMBD354LT1G
NSVMMBD354LT1G
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
MMBD355LT1G
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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http://onsemi.com
3
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
MMBD352LT1/D
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