Dual RF Schottky Diode

NSR15SDW1T1
NSR15SDW1T2
Dual RF Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features
•
•
•
•
•
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Low Capacitance (<1 pF)
Low VF (390 mV typical @ 1 mA)
Low VFD (1 mV typical @ 1 mA)
Pins 2 and 5 Shorted
Pb−Free Packages are Available
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
Benefits
• Reduced Parasitic Losses
• Accurate Signal Measurement
• Reduced Cross Talk
6
5
4
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Reverse Voltage
VR
15
V
Forward Current
IF
30
mA
TJ, Tstg
−65 to +150
°C
Operating and Storage
Temperature Range
SC−88
CASE 419B
STYLE 21
1
MARKING DIAGRAM
6
ESD Rating: Class 1 per Human Body Model
ESD Rating: Class A per Machine Model
R6 M G
G
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
Junction−to−Ambient
1
Symbol
Value
Unit
RqJA
500
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R6 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSR15SDW1T1
NSR15SDW1T1G
NSR15SDW1T2
NSR15SDW1T2G
NSR15SDW1T4
NSR15SDW1T4G
Package
Shipping†
SC−88
3000/Tape & Reel
SC−88
(Pb−Free)
3000/Tape & Reel
SC−88
3000/Tape & Reel
SC−88
(Pb−Free)
3000/Tape & Reel
SC−88
10,000/Tape & Reel
SC−88 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1
Publication Order Number:
NSR15SDW1T1/D
NSR15SDW1T1 NSR15SDW1T2
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
VBR
15
20
−
V
Reverse Leakage (VR = 1 V)
IR
−
2
50
nA
Forward Voltage (IF = 1 mA)
VF1
−
390
415
mV
Forward Voltage (IF = 10 mA)
VF2
−
530
680
mV
Delta VF (IF = 1 mA, All Diodes)
DVF
−
1
15
mV
CT
−
0.8
1
pF
Breakdown Voltage (IR = 10 mA)
Capacitance (VF = 0 V, f = 1 MHz)
100 k
IR, REVERSE CURRENT (nA)
IF, FORWARD CURRENT (mA)
100
10
25°C
75°C
1
125°C
−25°C
0.1
0.01
10 k
125°C
1k
75°C
100
25°C
10
1
0
0.1
0.2
0.3
0.4
0.5
VF, FORWARD VOLTAGE (V)
0.6
0
0.7
5
10
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Current versus Forward
Voltage at Temperatures
Figure 2. Reverse Current versus Reverse
Voltage
1000
RD, DYNAMIC RESISTANCE (W)
CT, CAPACITANCE (pF)
1
0.9
0.8
0.7
0.6
0.5
15
100
10
1
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
7
0.1
8
Figure 3. Total Capacitance versus Reverse
Voltage
1
10
IF, FORWARD CURRENT (mA)
100
Figure 4. Dynamic Resistance versus Forward
Current
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2
100
IF (left scale)
10
10
DVF (right scale)
1
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.1
Figure 5. Typical VF Match at Mixer Bias Levels
IF (left scale)
1
DVF (right scale)
1
0.1
0.175
0.275
0.225
VF, FORWARD VOLTAGE (V)
0.325
Figure 6. Typical VF Match at Detector Bias Levels
1
10
DC Bias = 3 mA
1
0.1
0.1
RF IN
NSR15SDW1
VDET, (Vdc)
VDET, (Vdc)
10
100
10
1
0.1
DVF, FORWARD VOLTAGE DIFFERENCE (mV)
IF, FORWARD CURRENT (mA)
IF, FORWARD CURRENT (mA)
100
DVF, FORWARD VOLTAGE DIFFERENTIAL (mV)
NSR15SDW1T1 NSR15SDW1T2
VO
18 nH
0.01
0.001
RF IN
0.0001
100 pF
3.3 nH
0.01
68 W
100 kW
NSR15SDW1
VO
100 pF
4.7 kW
0.00001
0.001
−40
−35
−30
−25 −20
−15
−10
Pin, INPUT POWER (dBm)
−5
0.000001
−20 −15 −10
0
Figure 7. Typical Output Voltage versus Input Power,
Small Signal Detector Operating at 850 MHz
−5
0
5
10 15
Pin, INPUT POWER (dBm)
CONVERSION LOSS (dB)
10
9
8
7
0
10
2
4
6
8
LOCAL OSCILLATOR POWER (dBm)
12
Figure 9. Typical Conversion Loss versus L.O. Drive,
2.0 GHz
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3
25
30
Figure 8. Typical Output Voltage versus Input
Power, Large Signal Detector Operating at 915 MHz
12
6
−2
20
NSR15SDW1T1 NSR15SDW1T2
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
4
1
2
3
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
b 6 PL
0.2 (0.008)
M
E
M
A3
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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NSR15SDW1T1/D
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