Common Cathode Switching Diode

NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT−563 package which is designed for low power surface mount
applications, where board space is at a premium.
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(2)
(3)
(1)
Features
• Fast trr
• Low CD
• Pb−Free Packages are Available
(4)
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
Value
Unit
VR
80
Vdc
VRM
80
Vdc
IF
100
mAdc
IFM
300
mAdc
IFSM
(Note 1)
2.0
Adc
Total Device Dissipation @TA = 25°C
Characteristic
(Both Junctions Heated)
Total Device Dissipation @TA = 25°C
Symbol
Max
Unit
PD
357
(Note 2)
2.9
(Note 2)
mW
Junction and Storage Temperature
N9 M G
G
mW/°C
RJA
350
(Note 2)
°C/W
Symbol
Max
Unit
PD
500
(Note 2)
4.0
(Note 2)
mW
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
(6)
1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
(5)
mW/°C
1
N9 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
RJA
250
(Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 S
2. FR−4 @ Minimum Pad
NSDEMN11XV6T1
Package
Shipping†
SOT−563 4000/Tape & Reel
NSDEMN11XV6T1G SOT−563 4000/Tape & Reel
(Pb−Free)
NSDEMN11XV6T5
SOT−563 8000/Tape & Reel
NSDEMN11XV6T5G SOT−563 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
1
Publication Order Number:
NSDEMN11XV6T1/D
NSDEMN11XV6T1, NSDEMN11XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 70 V
−
0.1
Adc
Forward Voltage
VF
IF = 100 mA
−
1.2
Vdc
Characteristic
Reverse Breakdown Voltage
VR
IR = 100 A
80
−
Vdc
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
−
3.5
pF
trr
(Note 3)
IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
−
4.0
ns
Reverse Recovery Time
3. trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
10
IR , REVERSE CURRENT (μA)
TA = 85°C
10
TA = −40°C
1.0
0.1
TA = 25°C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 150°C
TA = 25°C
10
0
Figure 1. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.0
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
0.9
0.8
0.7
0.6
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
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2
8
50
NSDEMN11XV6T1, NSDEMN11XV6T5
tr
tp
t
IF
trr
t
10%
A
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
INPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMN11XV6T1
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3
IF = 5.0 mA
VR = 6 V
RL = 100 OUTPUT PULSE
NSDEMN11XV6T1, NSDEMN11XV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
2
L
4
E
−Y−
3
b
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
HE
DIM
A
b
C
D
E
e
L
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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NSDEMN11XV6T1/D
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