MSD6150 Dual Diode Common Anode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Peak Forward Recurrent Current IF 200 mAdc IFM(surge) 500 mAdc PD(1) 625 5.0 mW mW/°C TJ, Tstg(1) −55 to +135 °C Peak Forward Surge Current (Pulse Width = 10 μsec) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range http://onsemi.com 1 TO−92 (TO−226AA) CASE 29−11 STYLE 4 2 3 3 Anode Cathode 1 2 Cathode ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Min Typ Max Unit V(BR) 70 — — Vdc Reverse Current (VR = 50 Vdc) IR — — 0.1 μAdc Forward Voltage (IF = 10 mAdc) VF — 0.80 1.0 Vdc Capacitance (VR = 0) C — 5.0 8.0 pF Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) trr — — 100 ns Characteristic Breakdown Voltage (I(BR) = 100 μAdc) 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C, Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = −55 to +150°C, θJC = 12.5°C/W, θJA = 125°C. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: MSD6150/D MSD6150 TYPICAL CHARACTERISTICS Curves Applicable to Each Cathode 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = −40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0.001 1.2 0 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 2 8 50 MSD6150 PACKAGE DIMENSIONS TO−92 (TO−226AA) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C 1 N SECTION X−X N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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