Thyristor Surge Protective Device (TSPD)

MMT05B350T3
Preferred Devices
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Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
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BIDIRECTIONAL TSPD ( )
50 AMP SURGE, 350 VOLTS
Features
• High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled
MT1
MT2
Temperature Environments
• The MMT05B350T3 is used to help equipment meet various
•
•
•
•
•
•
•
regulatory requirements including: Bellcore 1089, ITU K.20 and
K.21, IEC 950, UL 1459 and 1950 and FCC Part 68
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Recognized − File #E210057
Pb−Free Package is Available
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAMS
AYWW
RPBM G
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Off−State Voltage − Maximum
Maximum Pulse Surge Short Circuit Current
Non−Repetitive Double Exponential Decay
Waveform (−25°C Initial Temperature)
(Notes 1 and 2)
2 x 10 msec
8 x 20 msec
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
10 x 1000 msec
Symbol
Value
Unit
VDM
300
V
A(pk)
IPPS1
IPPS2
IPPS3
IPPS4
IPPS5
IPPS6
IPPS7
±150
±150
±100
±100
±70
±70
±50
Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave
ITSM
32
A(pk)
Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform, < 100 A
di/dt
"300
A/ms
ORDERING INFORMATION
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
A
= Assembly Location
Y
= Year
WW = Work Week
RPBM = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
1
MMT05B350T3
MMT05B350T3G
Package
Shipping†
SMB
12 mm Tape & Reel
(2.5 K/Reel)
SMB
(Pb−Free)
12 mm Tape & Reel
(2.5 K/Reel)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMT05B350T3/D
MMT05B350T3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Operating Temperature Range Blocking or Conducting State
Characteristic
TJ1
−40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Symbol
Min
Typ
Max
−
−
−
−
400
412
−
−
400
−
−
412
dV(BO)/dTJ
−
0.12
−
V/°C
V(BR)
−
350
−
V
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
ID1
ID2
−
−
−
−
2.0
5.0
mA
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
VT
−
1.6
3.0
V
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW)
Both polarities
IBO
−
475
−
mA
Holding Current (Both polarities)
VS = 500 V; IT (Initiating Current) = "1.0 A
IH
150
130
270
−
−
−
mA
dv/dt
2000
−
−
V/ms
CO
−
−
14
27
18
30
pF
Characteristics
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V)
(+65°C)
V(BO)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
V(BO)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
(Note 3)
(+65°C)
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
Unit
V
V
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
ID1, ID2
Off State Leakage Current
VD1, VD2
Off State Blocking Voltage
VBR
Breakdown Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
VTM
V(BO)
IH
ID1
I(BO)
ID2
+ Voltage
VD1
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2
VD2
V(BR)
MMT05B350T3
VBR, BREAKDOWN VOLTAGE (VOLTS)
ID1, OFF−STATE CURRENT (mA)
100
VD1 = 50V
10
1.0
0.1
0.01
0.001
−60 −40 −20
0
20
40 60 80
TEMPERATURE (°C)
100 120 140
400
390
380
370
360
350
340
330
320
−60 −40 −20
440
100 120 140
600
550
430
420
410
400
390
500
450
400
350
300
250
200
150
380
−60 −40 −20
0
20 40
60
80
TEMPERATURE (°C)
100
−40 −20
100 120 140
Figure 3. Maximum Breakover Voltage versus
Temperature
0
20
40
60
80
TEMPERATURE (°C)
100
120
Figure 4. Typical Holding Current versus
Temperature
420
tr = rise time to peak value
tf = decay time to half value
Peak
Value
100
400
380
CURRENT (A)
IPP − PEAK PULSE CURRENT − %IPP
20 40 60 80
TEMPERATURE (°C)
Figure 2. Typical Breakdown Voltage versus
Temperature
IH, Holding Current (mA)
VBO, BREAKOVER VOLTAGE (VOLTS)
Figure 1. Typical Off−State Current versus
Temperature
0
Half Value
50
360
340
320
300
280
260
240
0
0 tr
220
10
tf
100
1000
100000
TIME (sec)
TIME (ms)
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
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3
MMT05B350T3
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
GND
TELECOM
EQUIPMENT
RING
PPTC*
TIP
OUTSIDE
PLANT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE
PLANT
GND
RING
HEAT COIL
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4
TELECOM
EQUIPMENT
MMT05B350T3
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
S
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
C
K
P
J
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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MMT05B350T3/D