24 Watt Peak Power Zener Transient Voltage Suppressors

NZ23C5V6ALT1G
24 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
http://onsemi.com
This dual monolithic silicon Zener diodes is designed for applications
requiring transient overvoltage protection capability. This is intended
for use in voltage and ESD sensitive equipment such as computers,
printers, business machines, communication systems, medical
equipment and other applications. The dual junction common anode
design protects two separate lines using only one package. This device
is ideal for situations where board space is at a premium.
1
MARKING
DIAGRAM
3
Features
• SOT−23 Package Allows Either Two Separate Unidirectional
•
•
•
•
•
•
•
•
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 3 V
Standard Zener Breakdown Voltage Range − 5.6 V
Peak Power − 24 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating:
− Class 3B (>16 kV) per the Human Body Model
− Class C (>400 V) per the Machine Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 0.1 mA
Flammability Rating UL 94 V−0
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
2
1
2
SOT−23
CASE 318
STYLE 12
5V6MG
G
1
5V6 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 0
1
Publication Order Number:
NZ23C5V6AL/D
NZ23C5V6ALT1G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C
Rating
Ppk
24
W
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25°C
°PD°
225
1.8
°mW°
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25°C
°PD°
300
2.4
°mW
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
TL
260
°C
Lead Solder Temperature − Maximum (10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
QVBR
IF
VC VBR VRWM
V
IR VF
IT
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
IPP
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
24 WATTS
Breakdown Voltage
VRWM
Device
Device
Marking
Volts
NZ23C5V6ALT1G
5V6
1.0
IR @
VRWM
VBR (Note 4) (V)
@ IT
Max Zener
Impedance (Note 5)
VC @ IPP
(Note 6)
ZZT
@
20mA
ZZK @ IZK
VC
IPP
QVBR
V
A
mV/5C
8.0
3.0
1.26
mA
Min
Nom
Max
mA
W
W
mA
0.1
5.2
5.6
6.0
5.0
11
1600
0.25
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5 and derate per Figure 6
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2
NZ23C5V6ALT1G
TYPICAL CHARACTERISTICS
1000
15
100
12
10
IR (nA)
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
18
9
1
6
0.1
3
0
−40
+ 50
+ 100
TEMPERATURE (°C)
0
+ 150
0.01
−40
Figure 1. Typical Breakdown Voltage
versus Temperature
+ 85
+ 25
TEMPERATURE (°C)
+ 125
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve is bidirectional mode,
lower curve is unidirectional mode)
320
PD, POWER DISSIPATION (mW)
300
C, CAPACITANCE (pF)
280
240
200
5.6 V
160
120
80
40
0
0
1
2
250
200
150
100
FR−5 BOARD
50
0
3
ALUMINA SUBSTRATE
0
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
25
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 4. Steady State Power Derating Curve
(Upper curve is unidirectional mode,
lower curve is bidirectional mode)
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3
NZ23C5V6ALT1G
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
tr ≤ 10 ms
100
VALUE (%)
PEAK VALUE − IPP
IPP
HALF VALUE −
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25°C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
25
Figure 5. Pulse Waveform
RECTANGULAR
WAVEFORM, TA = 25°C
Ppk, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
Figure 6. Pulse Derating Curve
BIDIRECTIONAL
1
200
100
100
10
50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (°C)
UNIDIRECTIONAL
0.1
1
10
100
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
1000
0.1
1
10
100
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW
Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
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4
1000
NZ23C5V6ALT1G
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
D
FUNCTIONAL
DECODER
GND
NZ23C5V6ALT1G
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
I/O
CPU
NZ23C5V6ALT1
G
CLOCK
CONTROL BUS
GND
NZ23C5V6ALT1G
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5
NZ23C5V6ALT1G
ORDERING INFORMATION
Package
Shipping†
SOT−23
(Pb−Free)
3000 Tape & Reel
Device
NZ23C5V6ALT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NZ23C5V6ALT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NZ23C5V6AL/D
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