NZ23C5V6ALT1G 24 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com This dual monolithic silicon Zener diodes is designed for applications requiring transient overvoltage protection capability. This is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. The dual junction common anode design protects two separate lines using only one package. This device is ideal for situations where board space is at a premium. 1 MARKING DIAGRAM 3 Features • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • • • • Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 3 V Standard Zener Breakdown Voltage Range − 5.6 V Peak Power − 24 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform ESD Rating: − Class 3B (>16 kV) per the Human Body Model − Class C (>400 V) per the Machine Model Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 0.1 mA Flammability Rating UL 94 V−0 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 2 1 2 SOT−23 CASE 318 STYLE 12 5V6MG G 1 5V6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel © Semiconductor Components Industries, LLC, 2009 December, 2009 − Rev. 0 1 Publication Order Number: NZ23C5V6AL/D NZ23C5V6ALT1G MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Rating Ppk 24 W Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 °mW° mW/°C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 °mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR IF VC VBR VRWM V IR VF IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current IPP Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) 24 WATTS Breakdown Voltage VRWM Device Device Marking Volts NZ23C5V6ALT1G 5V6 1.0 IR @ VRWM VBR (Note 4) (V) @ IT Max Zener Impedance (Note 5) VC @ IPP (Note 6) ZZT @ 20mA ZZK @ IZK VC IPP QVBR V A mV/5C 8.0 3.0 1.26 mA Min Nom Max mA W W mA 0.1 5.2 5.6 6.0 5.0 11 1600 0.25 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 5 and derate per Figure 6 http://onsemi.com 2 NZ23C5V6ALT1G TYPICAL CHARACTERISTICS 1000 15 100 12 10 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 18 9 1 6 0.1 3 0 −40 + 50 + 100 TEMPERATURE (°C) 0 + 150 0.01 −40 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (°C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve is bidirectional mode, lower curve is unidirectional mode) 320 PD, POWER DISSIPATION (mW) 300 C, CAPACITANCE (pF) 280 240 200 5.6 V 160 120 80 40 0 0 1 2 250 200 150 100 FR−5 BOARD 50 0 3 ALUMINA SUBSTRATE 0 BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve (Upper curve is unidirectional mode, lower curve is bidirectional mode) http://onsemi.com 3 NZ23C5V6ALT1G PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 ms 100 VALUE (%) PEAK VALUE − IPP IPP HALF VALUE − 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 5. Pulse Waveform RECTANGULAR WAVEFORM, TA = 25°C Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) Figure 6. Pulse Derating Curve BIDIRECTIONAL 1 200 100 100 10 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) UNIDIRECTIONAL 0.1 1 10 100 RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 7. Maximum Non−repetitive Surge Power, Ppk versus PW Figure 8. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). http://onsemi.com 4 1000 NZ23C5V6ALT1G TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT−23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND NZ23C5V6ALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS I/O CPU NZ23C5V6ALT1 G CLOCK CONTROL BUS GND NZ23C5V6ALT1G http://onsemi.com 5 NZ23C5V6ALT1G ORDERING INFORMATION Package Shipping† SOT−23 (Pb−Free) 3000 Tape & Reel Device NZ23C5V6ALT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NZ23C5V6ALT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NZ23C5V6AL/D