Energy (Surge) Rated Zener Voltage Regulators in Sot-23 Package

MMBZ52xxELT1G Series,
SZMMBZ52xxELT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
http://onsemi.com
3
Cathode
Features
•
•
•
•
•
•
•
•
•
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range − 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
Rating
Symbol
Max
Unit
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD
RqJA
PD
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 7
3
1
2
SOT−23
CASE 318
STYLE 8
Bxx M G
G
1
Bxx
xx
M
G
= Device Code
= (Refer to page 2)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Package
Shipping†
MMBZ52xxELT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZMMBZ52xxELT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBZ52xxELT3G
SOT−23
(Pb−Free)
10000 / Tape &
Reel
Device
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
MARKING
DIAGRAM
ORDERING INFORMATION
MAXIMUM RATINGS
Thermal Resistance, Junction−to−Ambient
1
Anode
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Publication Order Number:
MMBZ5221ELT1/D
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
VZ VR
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
V
IR VF
IZT
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 4)
VZ (V)
Zener Impedance
@ IZT
ZZT @ IZT
Leakage Current
ZZK @ IZK
IR @ VR
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
V
MMBZ5221ELT1/T3G
BE2
2.28
2.4
2.52
20
30
1200
0.25
100
1
MMBZ5226ELT1/T3G
BE7
3.13
3.3
3.47
20
28
1600
0.25
25
1
MMBZ5228ELT1/T3G
BE9
3.70
3.9
4.10
20
23
1900
0.25
10
1
MMBZ5229ELT1/T3G
BF1
4.08
4.3
4.52
20
22
2000
0.25
5
1
MMBZ5230ELT1/T3G
BF2
4.46
4.7
4.94
20
19
1900
0.25
5
2
MMBZ5231ELT1/T3G
BF3
4.84
5.1
5.36
20
17
1600
0.25
5
2
MMBZ5232ELT1/T3G
BF4
5.32
5.6
5.88
20
11
1600
0.25
5
3
MMBZ5234ELT1/T3G
BF6
5.89
6.2
6.51
20
7
1000
0.25
5
4
MMBZ5235ELT1/T3G
BF7
6.46
6.8
7.14
20
5
750
0.25
3
5
MMBZ5236ELT1/T3G
BF8
7.12
7.5
7.88
20
6
500
0.25
3
6
MMBZ5237ELT1/T3G
BF9
7.79
8.2
8.61
20
8
500
0.25
3
6.5
MMBZ5239ELT1/T3G
BG2
8.65
9.1
9.55
20
10
600
0.25
3
7
MMBZ5240ELT1/T3G
BG3
9.50
10
10.50
20
17
600
0.25
3
8
MMBZ5242ELT1/T3G
BG5
11.40
12
12.60
20
30
600
0.25
1
9.1
MMBZ5243ELT1/T3G
BG6
12.35
13
13.65
9.5
13
600
0.25
0.5
9.9
MMBZ5244ELT1/T3G
BG7
13.30
14
14.70
9
15
600
0.25
0.1
10
MMBZ5245ELT1/T3G
BG8
14.25
15
15.75
8.5
16
600
0.25
0.1
11
MMBZ5246ELT1G†
BG9
15.20
16
16.80
7.8
17
600
0.25
0.1
12
MMBZ5248ELT1/T1G
BH2
17.10
18
18.90
7
21
600
0.25
0.1
14
MMBZ5250ELT1/T3G
BH4
19.00
20
21.00
6.2
25
600
0.25
0.1
15
Device*
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Includes SZ−prefix devices where applicable.
†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.
http://onsemi.com
2
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 5)
VZ (V)
Zener Impedance
@ IZT
ZZT @ IZT
Leakage Current
ZZK @ IZK
IR @ VR
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
V
MMBZ5252ELT1G†
BH6
22.80
24
25.20
5.2
33
600
0.25
0.1
18
MMBZ5253ELT1/T3G
BH7
23.75
25
26.25
5
35
600
0.25
0.1
19
MMBZ5254ELT1/T3G
BH8
25.65
27
28.35
4.6
41
600
0.25
0.1
21
MMBZ5255ELT1/T3G
BH9
26.60
28
29.40
4.5
44
600
0.25
0.1
21
MMBZ5256ELT1/T3G
BJ1
28.50
30
31.50
4.2
49
600
0.25
0.1
23
MMBZ5257ELT1/T3G
BJ2
31.35
33
34.65
3.8
58
700
0.25
0.1
25
MMBZ5258ELT1/T3G
BJ3
34.20
36
37.80
3.4
70
700
0.25
0.1
27
MMBZ5261ELT1G
BJ6
49.35
47
44.65
2.7
105
1000
0.25
0.1
36
MMBZ5262ELT1/T3G
BJ7
48.45
51
53.55
2.5
125
1100
0.25
0.1
37
MMBZ5263ELT1/T3G
BJ8
53.20
56
58.80
2.2
150
1300
0.25
0.1
43
MMBZ5265ELT1G†
BK1
58.90
62
65.10
2
185
1400
0.25
0.1
47
Device*
5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Includes SZ−prefix devices where applicable.
†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.
http://onsemi.com
3
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
FOR MMBZ52xxBLT1G SERIES,
SZMMBZ52xxBLT1G SERIES
6
5
4
VZ @ IZT
3
VZ @ IZT
10
2
1
0
−1
−2
−3
TYPICAL TC VALUES
FOR MMBZ52xxBLT1G SERIES,
SZMMBZ52xxBLT1G SERIES
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE ( Ω )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
http://onsemi.com
4
1.1
1.2
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT (m A)
TA = 25°C
100
BIAS AT
50% OF VZ NOM
100
10
1
+150°C
0.1
0.01
10
+25°C
0.00
1
0.0001
1
1
-55°C
0.00001
0
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
10
Figure 5. Typical Capacitance
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
100
100
TA = 25°C
I Z , ZENER CURRENT (mA)
10
1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
1
0.1
0.01
12
10
10
10
100
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 ms
tr
90
30
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
I Z , ZENER CURRENT (mA)
TA = 25°C
0.01
80
40
60
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
http://onsemi.com
5
80
90
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMBZ5221ELT1/D
Similar pages