Energy Rated Zener Voltage Regulators in SOD 123

MMSZxxxET1G Series,
SZMMSZxxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
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Specification Features









500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
1
xxx MG
G
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating
Symbol
Peak Power Dissipation @ 20 ms (Note 1)
@ TL  25C
Ppk
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75C
Derated above 75C
PD
Max
Unit
W
225
500
6.7
mW
mW/C
Thermal Resistance, Junction−to−Ambient
(Note 3)
RqJA
340
C/W
Thermal Resistance, Junction−to−Lead
(Note 3)
RqJL
150
C/W
TJ, Tstg
−55 to +150
Junction and Storage Temperature Range
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
ORDERING INFORMATION
Package
Shipping†
MMSZxxxET1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SZMMSZxxxET1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZxxxET3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1
Publication Order Number:
MMSZ2V4ET1/D
MMSZxxxET1G Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless
I
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (V)
(Notes 4 and 5)
ZZT1
(Note 6)
VZ2 (V)
(Notes 4 and 5)
@ IZT1 = 5 mA
ZZT2
(Note 6)
Max Reverse
Leakage Current
@ IZT2 = 1 mA
IR @ VR
Device
Marking
Min
Nom
Max
W
Min
Max
W
mA
V
MMSZ2V4ET1G
MMSZ2V7ET1G
MMSZ3V0ET1G
MMSZ3V3ET1G
MMSZ3V6ET1G
CL1
CL2
CL3
CL4
CL5
2.28
2.57
2.85
3.14
3.42
2.4
2.7
3.0
3.3
3.6
2.52
2.84
3.15
3.47
3.78
100
100
95
95
90
1.7
1.9
2.1
2.3
2.7
2.1
2.4
2.7
2.9
3.3
600
600
600
600
600
50
20
10
5
5
1
1
1
1
1
MMSZ3V9ET1G
MMSZ4V3ET1G
MMSZ4V7ET1G
MMSZ5V1ET1G
CL6
CL7
CL8
CL9
3.71
4.09
4.47
4.85
3.9
4.3
4.7
5.1
4.10
4.52
4.94
5.36
90
90
80
60
2.9
3.3
3.7
4.2
3.5
4.0
4.7
5.3
600
600
500
480
3
3
3
2
1
1
2
2
MMSZ5V6ET1G
CM1
5.32
5.6
5.88
40
4.8
6.0
400
1
2
MMSZ6V2ET1G
CM2
5.89
6.2
6.51
10
5.6
6.6
150
3
4
MMSZ6V8ET1G
MMSZ7V5ET1G
MMSZ8V2ET1G
MMSZ9V1ET1G
CM3
CM4
CM5
CM6
6.46
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.56
15
15
15
15
6.3
6.9
7.6
8.4
7.2
7.9
8.7
9.6
80
80
80
100
2
1
0.7
0.5
4
5
5
6
MMSZ10ET1G
MMSZ11ET1G
MMSZ12ET1G
MMSZ13ET1G
MMSZ15ET1G
CM7
CM8
CM9
CN1
CN2
9.50
10.45
11.40
12.35
14.25
10
11
12
13
15
10.50
11.55
12.60
13.65
15.75
20
20
25
30
30
9.3
10.2
11.2
12.3
13.7
10.6
11.6
12.7
14.0
15.5
150
150
150
170
200
0.2
0.1
0.1
0.1
0.05
7
8
8
8
10.5
MMSZ16ET1G
MMSZ18ET1G
CN3
CN4
15.20
17.10
16
18
16.80
18.90
40
45
15.2
16.7
17.0
19.0
200
225
0.05
0.05
11.2
12.6
MMSZ20ET1G
MMSZ22ET1G
MMSZ24ET1G
CN5
CN6
CN7
19.00
20.90
22.80
20
22
24
21.00
23.10
25.20
55
55
70
18.7
20.7
22.7
21.1
23.2
25.5
225
250
250
0.05
0.05
0.05
14
15.4
16.8
Device*
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
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2
MMSZxxxET1G Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (V)
(Notes 7 and 8)
ZZT1
(Note 9)
@ IZT1 = 2 mA
VZ2 (V)
(Notes 7 and 8)
ZZT2
(Note 9)
Max Reverse
Leakage Current
@ IZT2 = 0.1 mA
@ IZT2 =
0.5 mA
IR @ VR
Device
Marking
Min
Nom
Max
W
Min
Max
W
mA
V
MMSZ27ET1G
MMSZ30ET1G
MMSZ33ET1G
MMSZ36ET1G
MMSZ39ET1G
CN8
CN9
CP1
CP2
CP3
25.65
28.50
31.35
34.20
37.05
27
30
33
36
39
28.35
31.50
34.65
37.80
40.95
80
80
80
90
130
25
27.8
30.8
33.8
36.7
28.9
32
35
38
41
300
300
325
350
350
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
MMSZ43ET1G
MMSZ47ET1G
MMSZ51ET1G
MMSZ56ET1G
CP4
CP5
CP6
CP7
40.85
44.65
48.45
53.20
43
47
51
56
45.15
49.35
53.55
58.80
150
170
180
200
39.7
43.7
47.6
51.5
46
50
54
60
375
375
400
425
0.05
0.05
0.05
0.05
30.1
32.9
35.7
39.2
Device*
7. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
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3
MMSZxxxET1G Series, SZMMSZxxxET1G Series
8
100
7
TYPICAL TC VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
6
5
4
10
 VZ, TEMPERATURE COEFFICIENT (mV/C)
 VZ, TEMPERATURE COEFFICIENT (mV/C)
TYPICAL CHARACTERISTICS
VZ @ IZT
3
2
1
0
−1
−2
1−3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
TYPICAL TC VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
VZ @ IZT
12
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55C to +150C)
Figure 2. Temperature Coefficients
(Temperature Range − 55C to +150C)
1000
Ppk, PEAK SURGE POWER (WATTS)
P D, POWER DISSIPATION (WATTS)
1.2
1.0
PD versus TL
0.8
0.6
100
PD versus TA
0.4
0.2
0
0
25
50
75
100
T, TEMPERATURE (C)
RECTANGULAR
WAVEFORM, TA = 25C
125
10
1
150
0.1
Figure 3. Steady State Power Derating
1000
1000
IZ = 1 mA
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE (  )
10
100
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1000
100
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
100
5 mA
20 mA
10
1
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
10
150C
1
0.4
Figure 5. Effect of Zener Voltage on
Zener Impedance
0.5
25C
0C
75C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
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4
1.1
1.2
MMSZxxxET1G Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT ( A)
TA = 25C
100
BIAS AT
50% OF VZ NOM
10
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
100
10
1
+150C
0.1
0.01
0.001
+ 25C
0.0001
−55C
0.00001
0
10
Figure 7. Typical Capacitance
100
I Z , ZENER CURRENT (mA)
10
1
TA = 25C
10
1
0.1
0.1
0.01
80
Figure 8. Typical Leakage Current
TA = 25C
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
0.01
12
10
10
100
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 ms
tr
90
30
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
90
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
I Z , ZENER CURRENT (mA)
100
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
40
60
t, TIME (ms)
Figure 11. 8  20 ms Pulse Waveform
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5
80
90
MMSZxxxET1G Series, SZMMSZxxxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
ÂÂÂÂ
ÂÂÂÂ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
q
E
2
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
0
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
-----
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
--10 
STYLE 1:
PIN 1. CATHODE
2. ANODE
q
L
b
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
----0.15
1.60
1.40
1.80
2.54
2.69
2.84
3.56
3.68
3.86
----0.25
--10 
0
C
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MMSZ2V4ET1/D
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