Energy Rated Zener Voltage Regulators in SOD123

MMSZ4xxxET1G Series,
SZMMSZ4xxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
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Features









500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
SOD−123
CASE 425
STYLE 1
1
Cathode
MARKING DIAGRAM
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
xxx M G
G
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL  25C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75C
Derated above 75C
PD
500
6.7
mW
mW/C
Thermal Resistance, (Note 3)
Junction−to−Ambient
RqJA
Thermal Resistance, (Note 3)
Junction−to−Lead
RqJL
Junction and Storage Temperature Range
1
xxx = Device Code (Refer to page 2)
M
= Date Code
G
= Pb−Free Package
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
Rating
2
Anode
TJ, Tstg
ORDERING INFORMATION
Package
Shipping†
MMSZ4xxxET1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SZMMSZ4xxxET1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ4xxxET3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
Device
C/W
340
C/W
150
−55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 6
1
Publication Order Number:
MMSZ4678ET1/D
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless
I
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Note 1)
VZ (V)
Leakage Current
@ IZT
IR @ VR
Device
Marking
Min
Nom
Max
mA
mA
V
MMSZ4680ET1G
CF8
2.09
2.2
2.31
50
4
1
MMSZ4684ET1G
CG3
3.13
3.3
3.47
50
7.5
1.5
MMSZ4688ET1G
CG7
4.47
4.7
4.94
50
10
3
MMSZ4689ET1G
CG8
4.85
5.1
5.36
50
10
3
MMSZ4690ET1G
CG9
5.32
5.6
5.88
50
10
4
MMSZ4691ET1G
CH1
5.89
6.2
6.51
50
10
5
MMSZ4692ET1G
CH2
6.46
6.8
7.14
50
10
5.1
MMSZ4693ET1G
CH3
7.13
7.5
7.88
50
10
5.7
MMSZ4697ET1G
CH7
9.50
10
10.50
50
1
7.6
MMSZ4699ET1G
CH9
11.40
12
12.60
50
0.05
9.1
MMSZ4701ET1G
CJ2
13.3
14
14.7
50
0.05
10.6
MMSZ4702ET1G
CJ3
14.25
15
15.75
50
0.05
11.4
MMSZ4703ET1G
CJ4
15.20
16
16.80
50
0.05
12.1
MMSZ4705ET1G
CJ6
17.10
18
18.90
50
0.05
13.6
MMSZ4709ET1G
CK1
22.80
24
25.20
50
0.01
18.2
MMSZ4711ET1G
CK3
25.65
27
28.35
50
0.01
20.4
MMSZ4717ET1G
CK9
40.85
43
45.15
50
0.01
32.6
Device*
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
*Include SZ-prefix devices where applicable.
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2
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
8
100
7
 VZ, TEMPERATURE COEFFICIENT (mV/C)
 VZ, TEMPERATURE COEFFICIENT (mV/C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
2
1
0
−1
−2
−3
2
3
4
5
6
7
8
9
10
11
10
10
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55C to +150C)
Figure 2. Temperature Coefficients
(Temperature Range − 55C to +150C)
1000
1.0
PD versus TL
0.8
0.6
100
PD versus TA
0.4
0.2
0
25
50
75
100
T, TEMPERATURE (C)
RECTANGULAR
WAVEFORM, TA = 25C
125
10
1
150
0.1
Figure 3. Steady State Power Derating
1
1000
1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
IZ = 1 mA
100
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
100
5 mA
20 mA
10
10
150C
1
10
100
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z ZT, DYNAMIC IMPEDANCE (  )
100
VZ, NOMINAL ZENER VOLTAGE (V)
Ppk , PEAK SURGE POWER (WATTS)
PD, POWER DISSIPATION (WATTS)
VZ @ IZT
1
12
1.2
0
TYPICAL TC VALUES
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 5. Effect of Zener Voltage on
Zener Impedance
0.5
75C 25C
0C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
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3
1.1
1.2
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT ( m A)
TA = 25C
100
BIAS AT
50% OF VZ NOM
10
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
100
10
1
+150C
0.1
0.01
0.001
+ 25C
0.0001
−55C
0.00001
0
10
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
I Z, ZENER CURRENT (mA)
TA = 25C
10
1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
10
TA = 25C
10
1
0.1
0.01
12
100
30
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 ms
tr
90
10
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
90
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
I Z, ZENER CURRENT (mA)
80
100
100
0.01
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
20
40
60
t, TIME (ms)
Figure 11. 8  20 ms Pulse Waveform
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4
80
90
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
ÂÂÂÂ
ÂÂÂÂ
1
HE
DIM
A
A1
b
c
D
E
HE
L
q
E
2
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
0
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
-----
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
--10 
STYLE 1:
PIN 1. CATHODE
2. ANODE
q
L
b
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
----0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
----0.25
--10 
0
C
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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