EVAL6393FB Low voltage full-bridge demonstration board based on the L6393 advanced high voltage gate driver Data brief Features ■ ~150 W drive capability (50 V - 3.0 Ar.m.s.) ■ Very low area occupation, all devices and power switches in SMD package (no heatsink) ■ Fast-decay or slow-decay on-board constant off-time peak current control ■ PWM voltage mode control with overcurrent protection possible via external logic signals ■ Driver supply voltage on-board generation directly from BUS voltage ■ Carefully optimized layout EVAL6393FB Description The EVAL6393FB demonstrates how to use two L6393 drivers to drive a single-phase load through a full-bridge topology. This allows both the direction and the value of the current flowing into the load to be controlled. Typical loads, which can be effectively driven by using this topology, are single-phase BLDC motors, fans and HID lamps. Thanks to the integrated features of the L6393, the board has a very small footprint and an optimized layout, and can be simply run by applying the BUS voltage and a direction signal. October 2012 Doc ID 023821 Rev 1 For further information contact your local STMicroelectronics sales office. 1/9 www.st.com 9 Board description 1 EVAL6393FB Board description Table 1. EVAL6393FB electrical specifications Parameter Value Supply voltage range (VS)(1) (2) 32 V to 52 VDC RMS output current rating (OUT x) Up to 3.0 A Driver supply voltage (VCC) (3) 10 to 20 V Logic control signals 0 to + 15 V Operating temperature range -40 to +125 °C 1. Minimum VS voltage restriction is due to biasing current of the Zener diode used to generate Vcc. This limit can be decreased by changing R29 value or by opening JP3 and providing an externally generated Vcc through connector J1. 2. Maximum VS voltage limit can be increased up to 580 V by replacing the power switches and bulk capacitor C15 with components with adequate voltage ratings. Resistor R29 should be removed and an externally generated Vcc should be provided through connector J1. 3. When externally supplied through J1 with JP3 opened, otherwise Vcc = 12 V. Figure 1. Jumper and connector location On-board Vcc generation jumper BUS voltage connector Peak current setting trimmer Off-time setting trimmer Control signals and optional external Vcc connector Slow/Fast Decay selection jumpers Load connector AM12618v1 2/9 Doc ID 023821 Rev 1 EVAL6393FB Board description Table 2. Jumper and connector description Name Type J1 Control signal connector J2 Power output Load connector J3 Power supply BUS power supply connector JP1 Configuration jumper To pull-up SD and/or BRAKE signal to VCC /3 JP2 Configuration jumper To pull-up SD and/or BRAKE signal to CPOUT JP3 Configuration jumper To connect the on-board generated VCC to the supply pins of the drivers Table 3. Function Optional control signal and external VCC connector Control signal connector pinout (J1) Pin Type 1 Power supply Driver power supply VCC, open JP3 to provide externally generated VCC 2 Power supply GND 3 Digital input Driver SD signal 4 Digital input Driver BRAKE signal 5 Analog PWM input 6 Digital input Table 4. Description Vctrl signal; used to change current limit threshold DIR signal; sets current direction Current peak detection settings Pin Type Description TR1 Variable resistor Used to adjust constant off-time duration after overcurrent detection TR2 Variable resistor Used to adjust overcurrent detection threshold Ipk Ipk = V(CP-)/[R10//R11//R12//R13] Table 5. Control scheme configuration Description Jumper configuration Constant off-time peak current control with slowdecay JP1 closed on !SD and JP2 closed on !BRAKE Constant off-time peak current control with fastdecay JP1 closed on !SD and JP2 closed on !SD PWM voltage control with slow-decay overcurrent JP1 open, JP2 closed on !BRAKE and !SD protection externally provided through J1 PWM voltage control with fast-decay overcurrent protection JP1 open, JP2 closed on !SD and !BRAKE externally provided through J1 Doc ID 023821 Rev 1 3/9 JP1 Vcc 4/9 Doc ID 023821 Rev 1 Vs R18 7.5k R6 24k R22 47k Q3 1 C7 4.7uF DZ2 12V SOD123 R29 2K4 1W Vcc C17 100nF JP2 J1 2 3 P12V C13 100nF 2N7002 JP3 !BRAKE MMSZ4683 SOD123 DZ1 !SD DIR Vcc 1k C11 33pF C14 10uF R14 Vcc Vcc R26 7.5k Vcc R20 24k C16 33pF C9 1uF C2 1uF Vs R3 47k R24 47k Vs 1 2 DT Vcc J3 7 U2 GND 8 9 10 12 13 14 R27 3.9k R25 24k 8 9 10 12 13 14 TR2 500 R8 10k R5 30k Vcc CP+ + - CP- LVG OUT HVG Boot Vcc CP+ + - CP- LVG OUT HVG Boot C6 4.7uF Vctrl BRAKE SD Phase L6393 U1 GND 6 CPOut 5 4 3 2 !SD 7 1 !BRAKE DT Vcc BRAKE SD Phase 6 CPOut 5 !DIR C5 5.6nF TR1 200k R4 30k C15 100uF 63V C10 100nF Vcc C3 100nF 3 !BRAKE 4 2 1 !SD L6393 1K R30 C12 22nF C18 33pF C8 470nF C1 470nF DIR C4 1nF 1k R9 D4 D3 D2 D1 LL4148 51 R23 51 R21 LL4148 LL4148 51 R2 51 R1 LL4148 STD35NF06 1 Q5 STD35NF06 1 Q4 STD35NF06 1 Q2 STD35NF06 STD35N 1 Q1 3 2 3 2 Vs 3 2 3 2 Vs R10 0R15 1W 1% R11 0R15 1W 1% R12 0R15 1W 1% R13 0R15 1W 1% OUTB OUTA 2 1 J2 Figure 2. Vcc !SD !BRAKE Vctrl DIR 1 2 3 4 5 6 Board description EVAL6393FB EVAL6393FB schematic AM12619v1 EVAL6393FB Board description Table 6. EVAL6393FB bill of material Reference Value C1, C8 470 nF, 25 V SMT ceramic capacitor, 0805 C2, C9 1 µF, 25 V SMT ceramic capacitor, 0805 C3, C10, C13, C17 100 nF, 25 V SMT ceramic capacitor, 0603 C4 1 nF, 25 V SMT ceramic capacitor, 0603 C5 5.6 nF, 25 V SMT ceramic capacitor, 0603 C6, C7 4.7 µF SMT ceramic capacitor, 0805 C11, C16, C18 33 pF, 25 V SMT ceramic capacitor, 0603 C12 22 nF, 25 V SMT ceramic capacitor, 0805 C14 10 µF, 25 V SMT ceramic capacitor, 1206 C15 100 µF, 63 V Radial lead electrolytic capacitor (D 10 mm, H 12.5 mm) D1, D2, D3, D4 LL4148 DZ1 MMSZ4683 DZ2 Description Fast switching diode, SOD80 3 V Zener diode, SOD123 12 V Zener diode, SOD123 J1 1x6 strip, 2.54 mm pitch J2, J3 1x2 screw PCB terminal block, 5.08 mm pitch JP1, JP2 2- way solder jumper JP3 Solder jumper Q1, Q2, Q4, Q5 STD35NF06 Q3 2N7002 R1, R2, R21, R23 51 Ω SMT resistor, 0603 R3, R22, R24 47 kΩ SMT resistor, 0603 R4, R5 30 kΩ SMT resistor, 0603 R6, R20, R25 24 kΩ SMT resistor, 0603 R8 10 kΩ SMT resistor, 0603 R9, R14, R30 1 kΩ SMT resistor, 0603 R10, R11, R12, R13 60 V, 35 A N-channel power MOSFET in DPAK 60 V, 0.2 A N-channel power MOSFET in SOT23 1% 1 W SMT resistor, 2512 R18, R26 7.5 kΩ SMT resistor, 0603 R27 3.9 kΩ SMT resistor, 0603 R29 Ω TR1 200 kΩ SMT trimmer TR2 500 Ω SMT trimmer U1, U2 L6393D 5% 1W SMT resistor, 2512 Half-bridge gate driver, in SO14 Doc ID 023821 Rev 1 5/9 Board description Figure 3. EVAL6393FB EVAL6393FB – layout (top layer) AM12620v1 Figure 4. EVAL6393FB – layout (bottom layer) AM12621v1 6/9 Doc ID 023821 Rev 1 EVAL6393FB Figure 5. Board description EVAL6393FB – layout (component placement view) AM12622v1 Doc ID 023821 Rev 1 7/9 Revision history 2 EVAL6393FB Revision history Table 7. 8/9 Document revision history Date Revision 23-Oct-2012 1 Changes Initial release. Doc ID 023821 Rev 1 EVAL6393FB Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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