SUP90N08-6m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0068 at VGS = 10 V 90d 75 • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial TO-220AB D G G D S S Top View N-Channel MOSFET Ordering Information: SUP90N08-6m8P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc Unit V 90d 90d 240 IAS 50 EAS 125 A mJ b PD 272 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.55 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 69538 S-72507-Rev. A, 03-Dec-07 www.vishay.com 1 SUP90N08-6m8P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.5 ± 250 VDS = 75 V, VGS = 0 V 1 VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 VDS ≥ 10 V, VGS = 10 V ID(on) rDS(on) 70 nA µA A VGS = 10 V, ID = 20 A 0.0056 0.0068 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.009 0.011 VDS = 15 V, ID = 20 A 50 gfs V Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 247 Total Gate Chargec Qg 75 Gate-Source Chargec Gate-Drain Chargec VDS = 30 V, VGS = 10 V, ID = 50 A td(on) c td(off) tr Fall Timec pF 517 115 nC 25.5 20 Rg c Rise Timec Turn-Off Delay Time VGS = 0 V, VDS = 30 V, f = 1 MHz Qgd Gate Resistance Turn-On Delay Time Qgs 4620 f = 1 MHz VDD = 30 V, RL = 0.6 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 1.2 2.4 16 30 11 20 24 40 10 20 IS 85 ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 20 A, VGS = 0 V trr IRM(REC) Qrr ns °Cb Pulsed Current Continuous Current Ω IF = 75 A, di/dt = 100 A/µs A 0.83 1.5 V 60 100 ns 3.3 4.5 A 100 150 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69538 S-72507-Rev. A, 03-Dec-07 SUP90N08-6m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 120 100 80 80 ID - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 7 V 100 6V 60 40 60 40 TC = 125 °C 20 20 25 °C 5V - 55 °C 0 0 0 1 2 3 4 0 5 4 8 10 80 100 VGS - Gate-to-Source Voltage (V) Output Characteristics Transconductance 0.0060 25 °C 60 125 °C 40 20 r DS(on) - On-Resistance (Ω) TC = - 55 °C 80 0.0058 VGS = 10 V 0.0056 0.0054 0.0052 0.0050 0 0 12 24 36 48 0 60 20 40 60 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) On-resistance vs. Gate-to-Source Voltage Transfer Characteristics 6000 0.05 ID = 20 A Ciss 4800 0.04 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 6 VDS - Drain-to-Source Voltage (V) 100 g fs - Transconductance (S) 2 0.03 0.02 25 °C 3600 2400 1200 0.01 Coss 150 °C Crss 0 0.00 4 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 69538 S-72507-Rev. A, 03-Dec-07 10 0 15 30 45 60 75 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUP90N08-6m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 ID = 20 A VDS = 30 V 8 6 1.7 r DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 50 A VDS = 60 V 4 2 17 34 51 68 1.4 1.1 0.8 0.5 - 50 0 0 VGS = 10 V 85 - 25 0 Qg - Total Gate Charge (nC) 75 100 125 150 175 0.8 100 150 °C 10 0.2 V GS(th) Variance (V) IS - Source Current (A) 50 Threshold Voltage On-Resistance vs. Junction Temperature 1.0 25 °C 0.1 ID = 5 mA - 0.4 - 1.0 ID = 250 µA - 1.6 0.01 0.001 0.0 25 TJ - Junction Temperature (°C) 0.2 0.4 0.6 0.8 1.0 - 2.2 - 50 1.2 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 94 100 ID = 1 mA 86 IDAV (A) V(BR)VDSS (normalized) 90 150 °C 25 °C 10 82 78 74 - 50 www.vishay.com 4 - 25 0 25 50 75 100 125 150 175 1 0.00001 0.0001 0.001 0.01 0.1 1.0 TJ - Junction Temperature (°C) TAV (s) Source-Drain Diode Forward Voltage Single Pulse Avalanche Current Capability vs. Temperature Document Number: 69538 S-72507-Rev. A, 03-Dec-07 SUP90N08-6m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 155 Limited by rDS(on)* ID - Drain Current (A) I D - Drain Current (A) 124 93 Package Limited 62 31 100 µs 100 1 ms 10 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 TC - Case Temperature (°C) * VGS Single Pulse Avalanche Current Capability vs. Time 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69538. Document Number: 69538 S-72507-Rev. A, 03-Dec-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1