VISHAY ZMY51

ZMY3V9 to ZMY100
Vishay Semiconductors
Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• For use in stablilizing and clipping circuits
e2
with high power rating
• The Zener voltages are graded according
to the international E 24 standard. Smaller voltage
tolerances are available upon request
• These diodes are also available in the DO41 case
with the type designation ZPY3V9 to ZPY100
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
18315
Mechanical Data
Case: MELF Glass case
Weight: approx. 135 mg
Cathode Band Color: black
Packaging Codes/Options:
GS18/ 5 k per 13" reel (12 mm tape), 10 k/box
GS08/ 1.5 k per 7" reel (12 mm tape), 12 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Ptot
1.01)
W
Zener current (see Table "Characteristics")
Power dissipation
1)
Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Thermal resistance junction to ambient air
Parameter
RthJA
1701)
K/W
Thermal resistance junction to case
RthJC
60
K/W
Junction temperature
Tj
175
°C
Storage temperature
Tstg
- 55 to + 175
°C
1)
Test condition
Valid provided that electrodes are kept at ambient temperature.
Document Number 85788
Rev. 1.7, 07-Aug-06
www.vishay.com
1
ZMY3V9 to ZMY100
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage (2)
Dynamic Resistance
Test
Current
Reverse Voltage
Admissible Zener
Current1)
VZ at IZT
rzj at IZT, f = 1 kHz
αVZ at IZT
IZT
VR at
IR = 0.5 µA
IZ at
Tamb = 25 °C
V
Ω
10-4/°C
mA
V
mA
min
typ
min
max
ZMY3V9
3.7
4.1
max
7
4
-7
2
100
-
203
ZMY4V3
4
4.6
7
4
-7
3
100
-
182
ZMY4V7
4.4
5
7
4
-7
4
100
-
165
ZMY5V1
4.8
5.4
5
2
-6
5
100
0.7
150
ZMY5V6
5.2
6
2
1
-3
5
100
1.5
135
ZMY6V2
5.8
6.6
2
1
-1
6
100
2
128
ZMY6V8
6.4
7.2
2
1
0
7
100
3
110
ZMY7V5
7
7.9
2
1
0
7
100
5
100
ZMY8V2
7.7
8.7
2
1
3
8
100
6
89
ZMY9V1
8.5
9.6
4
2
3
8
50
7
82
ZMY10
9.4
10.6
4
2
5
9
50
7.5
74
ZMY11
10.4
11.6
7
3
5
10
50
8.5
66
ZMY12
11.4
12.7
7
3
5
10
50
9
60
ZMY13
12.4
14.1
9
4
5
10
50
10
55
ZMY15
13.8
15.8
9
4
5
10
50
11
49
ZMY16
15.3
17.1
10
5
7
11
25
12
44
ZMY18
16.8
19.1
11
5
7
11
25
14
40
ZMY20
18.8
21.2
12
6
7
11
25
15
36
ZMY22
20.8
23.3
13
7
7
11
25
17
34
ZMY24
22.8
25.6
14
8
7
12
25
18
29
ZMY27
25.1
28.9
15
9
7
12
25
20
27
ZMY30
28
32
20
10
7
12
25
22.5
25
ZMY33
31
35
20
11
7
12
25
25
22
ZMY36
34
38
60
25
7
12
10
27
20
ZMY39
37
41
60
30
8
12
10
29
18
ZMY43
40
46
80
35
8
13
10
32
17
ZMY47
44
50
80
40
8
13
10
35
15
ZMY51
48
54
100
45
8
13
10
38
14
ZMY56
52
60
100
50
8
13
10
42
13
ZMY62
58
66
130
60
8
13
10
47
11
ZMY68
64
72
130
65
8
13
10
51
10
ZMY75
70
79
160
70
8
13
10
56
9
ZMY82
77
88
160
80
8
13
10
61
8
ZMY91
85
96
250
120
9
13
5
68
7.5
ZMY100
94
106
250
130
9
13
5
75
7
1)
Valid provided that electrodes are kept at ambient temperature
2)
Tested with pulses tp = 5 ms
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2
Temperature
Coefficient of
Zener Voltage
Document Number 85788
Rev. 1.7, 07-Aug-06
ZMY3V9 to ZMY100
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Ω
103
rzj
W
1.0
ZMY...
5
4
3
2
2
10
Ptot
ZMY5.1
ZMY4.3
5
4
3
2
ZMY...
0.8
0.6
ZMY18
ZMY12
0.4
10
5
4
3
2
0.2
ZMY6.2
ZMY7.5
ZMY10
1
1
2
3 4 5 7
10
18312
3 4 5
2
7
0
100 mA
0
Figure 1. Dynamic Resistance vs. Zener Current
Ω
100
Tamb
Figure 4. Admissible Power Dissipation vs. Ambient Temperature
°C/W
103
ZMY...
7
rzj
5
4
3
rthA
2
102
5
4
3
2
ZMY36
ZMY30
ZMY24
7
5
4
3
10
ZMY22
5
4
3
2
ZMY18
2
1
ZMY...
5
4
3
2
ZMY43
10
0.5
0.2
0.1
0.05
2
3 4 5
10
3 4 5
2
100 mA
IZ
18313
Figure 2. Dynamic Resistance vs. Zener Current
Ω
103
v=
0.01
10-5
18286
tP
0.02
1
1
200 °C
100
19969
IZ
V=0
10-4 10-3 10-2
t
T
P
___
PI
T
10-1
1
10 s
tP
Figure 5. Pulse Thermal Resistance vs. Pulse Duration
ZMY...
7
rzj
5
4
3
2
102
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
7
5
4
3
2
10
0.1
2
3 4 5
18314
1
3 4 5
2
10 mA
IZ
Figure 3. Dynamic Resistance vs. Zener Current
Document Number 85788
Rev. 1.7, 07-Aug-06
www.vishay.com
3
ZMY3V9 to ZMY100
Vishay Semiconductors
mA
Tj = 25 °C
ZMY3.9 ZMY4.7
200
IZ
mA
20
ZMY...
240
ZMY...
Tj = 25 °C
ZMY56
ZMY5.6
IZ
ZMY6.8
160
ZMY68
Test Current lZ
10 mA
ZMY8.2
Test Current lZ
100 mA
120
ZMY82
ZMY100
10
ZMY10
ZMY12
80
5 mA
50 mA
40
0
0
0
1
2
3
4
5
6
8
7
18309
9
0
10 11 12 13 14 15 V
18311
VZ
Figure 6. Breakdown Characteristics
50
100
150
200 V
VZ
Figure 8. Breakdown Characteristics
mA
ZMY...
60
ZMY15
Tj = 25 °C
ZMY22
50
IZ
ZMY18
ZMY27
40
Test Current lZ
25 mA
30
ZMY33
ZMY39
ZMY47
20
10 mA
10
0
0
5
10
15
20
25
30
35
40
45 50 V
VZ
18310
Figure 7. Breakdown Characteristics
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4
Document Number 85788
Rev. 1.7, 07-Aug-06
ZMY3V9 to ZMY100
Vishay Semiconductors
Package Dimensions of MELF Glass in mm (Inches): DO41
Cathode Identification
18317
Document Number 85788
Rev. 1.7, 07-Aug-06
www.vishay.com
5
ZMY3V9 to ZMY100
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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6
Document Number 85788
Rev. 1.7, 07-Aug-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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1