Dual Line CAN Bus Protector

NUP2125, SZNUP2125
Dual Line CAN
Bus Protector
The SZ/NUP2125 has been designed to protect the CAN transceiver
from ESD and other harmful transient voltage events. This device
provides bidirectional protection for each data line with a single
compact SC−70 (SOT−323) package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
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MARKING
DIAGRAM
Features
•
•
•
•
•
•
•
•
•
200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Diode Capacitance Matching
Low Reverse Leakage Current (< 100 nA)
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1 x 50 ms)
ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
Applications
♦
♦
25MG
G
1
25
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN 1
PIN 3
PIN 2
CAN_H
CAN
Transceiver
CAN_L
CAN Bus
NUP2125
• Automotive Networks
♦
SC−70
CASE 419
STYLE 4
CAN / CAN−FD
Low and High−Speed CAN
Fault Tolerant CAN
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 0
1
Publication Order Number:
NUP2125/D
NUP2125, SZNUP2125
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
PPK
Rating
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
Value
Unit
200
W
TJ
Operating Junction Temperature Range
−55 to 150
°C
TJ
Storage Temperature Range
−55 to 150
°C
TL
Lead Solder Temperature (10 s)
260
°C
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
8.0
1.6
30
kV
kV
kV
ESD
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Symbol
VRWM
Parameter
Test Conditions
Min
Typ
Max
Unit
24
−
−
V
26.2
−
32
V
Reverse Working Voltage
(Note 2)
Breakdown Voltage
IT = 1 mA (Note 3)
IR
Reverse Leakage Current
VRWM = 24 V
−
15
100
nA
VC
Clamping Voltage
IPP = 1 A (8 x 20 ms Waveform)
(Note 4)
−
33.4
36.6
V
VC
Clamping Voltage
IPP = 3 A (8 x 20 ms Waveform)
(Note 4)
−
44
50
V
IPP
Maximum Peak Pulse Current
8 x 20 ms Waveform (Note 4)
−
−
3.0
A
CJ
Capacitance
VR = 0 V, f = 1 MHz (Line to GND)
−
−
10
pF
DC
Diode Capacitance Matching
VR = 0 V, 5 MHz (Note 5)
−
0.26
2
%
VBR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Package
Shipping†
NUP2125WTT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
SZNUP2125WTT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
NUP2125WTT3G
SC−70
(Pb−Free)
10000 / Tape & Reel
SZNUP2125WTT3G
SC−70
(Pb−Free)
10000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NUP2125, SZNUP2125
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
3.5
IPP, PEAK PULSE CURRENT (A)
% OF PEAK PULSE CURRENT
110
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
100
90
80
c−t
70
60
td = IPP/2
50
40
30
20
10
0
0
10
5
20
15
2.5
2.0
1.5
1.0
0.5
0.0
30
30
25
3.0
35
Figure 1. Pulse Waveform, 8 × 20 ms
Figure 2. Clamping Voltage vs Peak Pulse Current
50
9
45
40
125°C
7
35
25°C
6
IT, (mA)
C, CAPACITANCE (pF)
8
5
30
25
20
15
4
25°C
10
3
0
10
5
15
20
0
20
25
65°C
125°C
5
TA = −55°C
22
24
26
28
30
32
34
VBR, VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 4. VBR versus IT Characteristics
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
120
25
−55°C
+25°C
TA = +150°C
100
20
PERCENT DERATING (%)
VR, REVERSE BIAS VOLTAGE (V)
50
VC, CLAMPING VOLTAGE (V)
t, TIME (ms)
2
45
40
15
10
5
0
0
1
2
3
IL, LEAKAGE CURRENT (nA)
4
80
60
40
20
0
−60
5
Figure 5. IR versus Temperature Characteristics
−30
0
30
60
90
TEMPERATURE (°C)
120
150 180
Figure 6. Temperature Power Dissipation Derating
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3
NUP2125, SZNUP2125
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
STYLE 4:
PIN 1.
2.
3.
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
CATHODE
CATHODE
ANODE
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NUP2125/D
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