MDC3205 Advance Information Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to • • • • • • 625 mW at 3 V to 5 V Features Low Input Drive Current Internal Zener Clamp Routes Induced Current to Ground Rather Than Back to Supply Guaranteed Off State with No Input Connection Supports Large Systems with Minimal Off−State Leakage ESD Resistant in Accordance with the 2000 V Human Body Model Provides a Robust Driver Interface Between Relay Coil and Sensitive Logic Circuits http://onsemi.com RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK Applications include: • • • • • • Telecom Line Cards and Telephony Industrial Controls Security Systems Appliances and White Goods Automated Test Equipment Automotive Controls CASE 29−11, STYLE 14 TO−92 INTERNAL CIRCUIT DIAGRAM Vout This device is intended to replace an array of three to six discrete components with an integrated part. It can be used to switch other 3 to 5 Vdc Inductive Loads such as solenoids and small DC motors. Vin 1.0 k (3) 6.8 V 33 k MAXIMUM RATINGS GND Rating (2) (1) Symbol Value Unit Power Supply Voltage VCC 6.0 Vdc Recommended Operating Supply Voltage VCC 2.0−5.5 Vdc Input Voltage Vin(fwd) 6.0 Vdc Reverse Input Voltage Vin(rev) −0.5 Vdc Output Sink Current ⎯ Continuous IO 300 mA Junction Temperature TJ 150 °C Operating Ambient Temperature Range TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C Symbol Max Unit PD 625 mW RqJA 200 °C/W THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) Derate above 25°C Thermal Resistance Junction to Ambient 1. FR−5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 3 1 Publication Order Number: MDC3205/D MDC3205 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BRout) V(−BRout) 6.4 — 6.8 −0.7 7.2 — V — — — — 5.0 30 — 2.5 — — 0.2 0.4 250 — — OFF CHARACTERISTICS Output Zener Breakdown Voltage (@ IT = 10 mA Pulse) Output Leakage Current @ 0 Input Voltage (Vout = 5.5 Vdc, Vin = O.C., TA = 25°C) (Vout = 5.5 Vdc, Vin = O.C., TA = 85°C) IOO μA ON CHARACTERISTICS Input Bias Current @ Vin = 4.0 Vdc (IO = 250 mA, Vout = 0.4 Vdc, TA = −40°C) (correlated to a measurement @ 25°C) Iin mAdc Output Saturation Voltage (IO = 250 mA, Vin = 4.0 Vdc, TA = −40°C) (correlated to a measurement @ 25°C) Vdc Output Sink Current ⎯ Continuous (TA = −40°C, VCE = 0.4 Vdc, Vin = 4.0 Vdc ) (correlated to a measurement @ 25°C) IC(on) mA TYPICAL APPLICATION−DEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS Symbol VCC Min Typ Max Propagation Delay Times: High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04) Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04) Characteristic tPHL tPLH 5.5 5.5 — — 55 430 — — High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04) Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04) tPHL tPLH 5.5 5.5 — — 85 315 — — High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04) Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04) tPHL tPLH 5.5 5.5 — — 55 2385 — — Transition Times: Fall Time; Figures 1, 2 (5.0 V 74HC04) Rise Time; Figures 1, 2 (5.0 V 74HC04) tf tr 5.5 5.5 — — 45 160 — — Fall Time; Figures 1, 3 (3.0 V 74HC04) Rise Time; Figures 1, 3 (3.0 V 74HC04) tf tr 5.5 5.5 — — 70 195 — — Fall Time; Figures 1, 4 (5.0 V 74LS04) Rise Time; Figures 1, 4 (5.0 V 74LS04) tf tr 5.5 5.5 — — 45 2400 — — ΔV/Δt in 5.5 TBD — — ns ns Input Slew Rate(1) 1. Minimum input slew rate must be followed to avoid overdissipating the device. tf Vin Units tr VCC 90% 50% 10% GND tPLH tPHL VCC 90% 50% 10% Vout VZ GND tTHL tTLH Figure 1. Switching Waveforms http://onsemi.com 2 V/ms MDC3205 +4.5 ≤ VCC ≤ +5.5 Vdc + + AROMAT TX2−L2−3 V Vout (3) Vout (3) MDC3205 74HC04 OR EQUIVALENT Vin (1) MDC3205 1k 1k 6.8 V Vin (1) 6.8 V 33 k 74HC04 OR EQUIVALENT 33 k GND (2) GND (2) Figure 2. A 3.0−V, 200−mW Dual Coil Latching Relay Application with 5.0 V−HCMOS Interface +3.0 ≤ VDD ≤ +3.75 Vdc +4.5 ≤ VCC ≤ +5.5 Vdc + + AROMAT TX2−L2−3 V Vout (3) Vout (3) MDC3205 74HC04 OR EQUIVALENT Vin (1) MDC3205 1k 1k 6.8 V Vin (1) 6.8 V 33 k 33 k GND (2) GND (2) Figure 3. A 3.0−V, 200−mW Dual Coil Latching Relay Application with 3.0 V−HCMOS Interface http://onsemi.com 3 74HC04 OR EQUIVALENT MDC3205 +4.5 ≤ VCC ≤ +5.5 Vdc + + AROMAT TX2−L2−3 V Vout (3) Vout (3) MDC3205 74LS04 BAL99LT 1 MDC3205 1k 1k 6.8 V 6.8 V 33 k BAL99LT 1 74LS04 33 k Vin (1) Vin (1) GND (2) GND (2) Figure 4. A 3.0−V, 200−mW Dual Coil Latching Relay Application with TTL Interface +4.5 TO +5.5 Vdc + + AROMAT R1 TX2−5 V R2 − AROMAT TX2−5 V − Max Continuous Current Calculation R1 = R2 = 178 Ω Nominal @ TA = 25°C Assuming ±10% Make Tolerance, R1 = R2 = (178 Ω) (0.9) = 160 Ω Min @ TA = 25°C Vout (3) TC for Annealed Copper Wire is 0.4%/°C 74HC04 OR EQUIVALENT N R1 = R2 = (160 Ω) [1+(0.004) (−40°−25°)] = 118 Ω Min @ −40°C Vin (1) R1 in Parallel with R2 = 59 Ω Min @ −40°C Io + 5.5 V Max – 0.4 V + 86 mA Max 59 W Min 86 mA ≤ 300 mA Max Io spec. GND (2) Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application http://onsemi.com 4 MDC3205 TYPICAL OPERATING WAVEFORMS 4.5 225 3.5 175 IC (mA) V in (VOLTS) (Circuit of Figure 5) 2.5 125 1.5 75 500 M 25 10 30 50 TIME (ms) 70 90 10 172 7 132 IZ (mA) Vout (VOLTS) 9 5 52 1 12 50 TIME (ms) 70 90 10 Figure 8. 20 Hz Square Wave Response 600 TJ = 85°C 300 TJ = 25°C 70 90 TJ = 25°C TJ = − 40°C 175 0.6 1 10 50 125 250 IC = 350 mA 0.4 0.2 100 0 50 TIME (ms) 0.8 400 200 30 1 OUTPUT VOLTAGE (V) hFE 500 90 Figure 9. 20 Hz Square Wave Response TJ = 125°C Vo = 1.0 V Vo = 0.25 V 70 92 3 30 50 TIME (ms) Figure 7. 20 Hz Square Wave Response Figure 6. 20 Hz Square Wave Input 10 30 1 10 100 Io, OUTPUT SINK CURRENT (mA) 0 1E−5 100 0 Figure 10. Pulsed Current Gain 1E−4 1E−3 INPUT CURRENT Figure 11. Collector Saturation Region http://onsemi.com 5 1E−2 MDC3205 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE D X X G J H V C 1 N SECTION X−X DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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