100 mA, 300 mA and 400 mA Triple LDO Linear Voltage Regulator with Reset and Delay

NCV8613B
Ultra-Low Iq Automotive
System Power Supply IC
Power Saving Triple-Output
Linear Regulator
The NCV8613B is a multiple output linear regulator IC’s with an
Automatic Switchover (ASO) input voltage selector. The ASO circuit
selects between three different input voltage sources to reduce power
dissipation and to maintain the output voltage level across varying
battery line voltages associated with an automotive environment.
The NCV8613B is specifically designed to address automotive
radio systems and instrument cluster power supply requirements. The
NCV8613B can be used in combination with the 4−Output
Controller/Regulator IC, NCV885x, to form a complete automotive
radio or instrument cluster power solution. The NCV8613B is
intended to supply power to various “always on” loads such as the
CAN transceivers and microcontrollers (core, memory and IO). The
NCV8613B has three output voltages, a reset / delay circuit, and a host
of control features suitable for the automotive radio and instrument
cluster systems.
http://onsemi.com
MARKING
DIAGRAM
20
NCV8613B
AWLYYWWG
G
1
DFN20
MN SUFFIX
CASE 505AB
A
WL
YY
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Operating Range 7.0 V to 18.0 V (45 V Load Dump Tolerant)
Output Voltage Tolerance, All Rails, $2%
< 50 mA Quiescent Current
Independent Input for LDO3 Linear Regulator
High Voltage Ignition Buffer
Automatic Switchover Input Voltage Selector
Independent Input Voltage Monitor with a High Input Voltage and
Low Input Voltage (Brown−out) Indicators
Thermal Warning Indicator with Thermal Shutdown
Single Reset with Externally Adjustable Delay for the 3.3 V Rail
Push−Pull Outputs for Logic Level Control Signals
All Ceramic Solution for Reduced Leakage Current at the Output
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
This is a Pb−Free Device
• Automotive Radio
• Instrument Cluster
March, 2010 − Rev. 0
ASO_RAIL
VIN_S3
VIN−B
VOUT3
VIN−H
VOUT2
VIN−A
VOUT1
VBATT_MON
VPP
HV_DET
RST
BO_DET
DLY
NC
GND
GND
IGNOUT
IGNIN
HOT_FLG
ORDERING INFORMATION
Device
NCV8613BMNR2G
Applications
© Semiconductor Components Industries, LLC, 2010
PIN CONNECTIONS
Package
Shipping†
DFN20 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NCV8613B/D
NCV8613B
NC
8
D2
8V
ASO_RAIL
1
1 uF
VIN-B
20
VINT
2
VBATT D1
VTH1
VTH2
1 uF
VIN-H
ILIMIT
VBG
VREF
OVS
VBATT_MON
5
VREF
VIN_MON
VPP
VPP
7
VRTH
17
VREF
VRFB1
TSD
16
TSD
15
11
D3
IGNOUT
5V
Fault Logic
VTH2
10
IGNIN
VOUT1
ILIMIT
VIN_MON
VPP
HOT_FLG
RST2
OVS
3.3 V
VPP
VRFB2
VTH1
6
VOUT2
ILIMIT
Switchover
Control Circuit
HV_DET
BO_DET
VRFB3
18
4
3.3 V
VREF
3
1000 uF
VIN-A
19
VIN_S3
VOUT3
VPP
RST
HV_DET
14
12
10 kΩ
9
13
GND
+ 5V
GND
Components
Value
Manufacturer
D1
MBRS2H100T3G
ON Semiconductor
D2
MBR130T1
ON Semiconductor
D3
MMDL914T1
ON Semiconductor
Figure 1. Typical Circuit with the Internal Schematic
http://onsemi.com
2
DLY
NCV8613B
PIN FUNCTION DESCRIPTIONS
Pin No.
Symbol
1
ASO_RAIL
Description
Output/Input of the automatic switchover (ASO) circuitry. Place a 1 uF ceramic capacitor on this
pin to provide local bypassing to the LDO linear regulator pass devices.
2
VIN−B
Primary power supply input. Connect battery to this pin through a blocking diode.
3
VIN−H
Holdup power supply rail. Connect a storage capacitor to this pin to provide a temporary backup
rail during loss of battery supply. A bleed resistor (typically 1 kW) is needed from VIN−B to this pin
in order to trickle charge this capacitor.
4
VIN−A
Voltage monitor which determines whether the 8 V supply is able to power the outputs. If the 8 V
supply is present, the FET’s connected to VIN−B and VIN−H will be turned off, and the 8 V supply
will be providing power to the outputs. If the 8 V supply is not present, the FET’s on VIN−B and
VIN−H will be left on, and the greater of those voltages will be driving the outputs.
5
VBATT_MON
VBATT monitor pin. To operate overvoltage shutdown, HV_DET and BO_DET, connect this pin to
ASO_RAIL or battery. To eliminate overvoltage shutdown, HV_DET and BO_DET, tie this pin to
ground.
6
HV_DET
High−voltage detect output. When VBATT_MON surpasses 17 V, this pin will be driven to ground.
During normal operation, this pin is held at VPP.
7
BO_DET
Brown out indicator output. When VBATT_MON and VIN−A falls below 7.5 V, this pin will be driven to ground. During normal operation, this pin is held at VPP.
8
NC
9
GND
10
HOT_FLG
No Connect
Ground. Reference point for internal signals. Internally connected to pin 13. Ground is not connected to the exposed pad of the DFN20 package.
Thermal warning indicator. This pin provides an early warning signal of an impending thermal
shutdown.
11
IGNIN
Ignition buffer input
12
IGOUT
Ignition buffer logic output
13
GND
Ground. Reference point for internal signals. Internally connected to pin 9. Ground is not connected to the exposed pad of the DFN20 package.
14
DLY
Delay pin. Connect a capacitor to this pin to set the delay time.
15
RST
Reset pin. Monitors VOUT1.
16
VPP
Supply rail for the push−pull outputs of the control signals HOT_FLG, RST, HV_DET & BO_DET
17
VOUT1
5 V output. Voltage is internally set.
18
VOUT2
3.3 V output. Voltage is internally set.
19
VOUT3
3.3 V output. Voltage is internally set.
20
VIN_S3
EP
−
Supply rail for the standby linear regulator VOUT3. Tie this pin to ASO_RAIL or a separate supply
rail.
Exposed Pad of DFN device. This pad serves as the main path for thermal spreading. The Exposed Pad is not connected to IC ground.
http://onsemi.com
3
NCV8613B
MAXIMUM RATINGS (Voltages are with respects to GND unless noted otherwise)
Rating
Symbol
Max
Min
Unit
Maximum DC Voltage
VIN−B, VIN−A, ASO_RAIL,
VBATT_MON, VIN_S3, EN, IGNIN
40
−0.3
V
Peak Transient
VIN−B, VIN−A, ASO_RAIL,
VBATT_MON, VIN_S3, EN, IGNIN
45
−0.3
V
Maximum DC Voltage
VIN−H
24
−0.3
V
Maximum DC Voltage
IGNOUT, VPP, HV_DET, BO_DET,
HOT_FLG, RST, DLY, VOUT1, VOUT2, VOUT3
7
−0.3
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL INFORMATION
Rating
Symbol
Min
Unit
RqJA
40
°C/W
Operating Junction Temperature Range
TJ
−40 to 150
°C
Maximum Storage Temperature Range
TSTG
−55 to +150
°C
Moisture Sensitivity Level
MSL
1
Thermal Characteristic (Note 1)
1. Values based on measurement of NCV8613B assembled on 2−layer 1−oz Cu thickness PCB with Copper Area of more than 645 mm2 with
several thermal vias for improved thermal performance. Refer to CIRCUIT DESCRIPTION section for safe operating area.
ATTRIBUTES
Rating
Symbol
Min
Unit
ESDHB
2
kV
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
ESD Capability, Charged Device Model (Note 2)
ESDCDM
1
kV
IGNIN ESD Capability, Human Body Model (Note 2)
ESDHB_IGNIN
3
kV
IGNIN ESD Capability, Machine Model (Note 2)
ESDMM_IGNIN
200
V
ESD_IGNIN
10
kV
ESD Capability, Human Body Model (Note 2)
IGNIN ESD Capability (Note 3)
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD Charged Device Model (CDM) tested per EIA/JES D22/C101, Field Induced Charge Model
3. Device tested with external 10 kW series resistance and 1 nF storage capacitor.
http://onsemi.com
4
NCV8613B
SUPPLY VOLTAGES AND SYSTEM SPECIFICATION ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H
= VIN−B w ASO_RAIL, VPP = 5 V, VIN_S3 tied to ASO_RAIL, VBATT_MON = 0 V, IGNIN = 0 V, ISYS = 3 mA (Note 6))
Minimum/Maximum values are valid for the temperature range −40°C v TJ v 150°C unless noted otherwise. Min/Max values are
guaranteed by test, design or statistical correlation.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
34
50
mA
SUPPLY RAILS
Quiescent Current (Notes 4 and 6)
iq
TJ = 25°C, ISYS = 70 mA, VIN−A =
VIN_S3 = 0 V, VIN−B = 13.2 V
Minimum Operating Voltage
(VIN−H, VIN−B)
4.5
V
THERMAL MONITORING
Thermal Warning (HOT_FLG)
Temperature
TWARN
140
TWARN Hysteresis
10
Thermal Shutdown
160
Thermal Shutdown Hysteresis
10
Delta Junction Temperature
(TSD − TWARN)
10
HOT_FLG Voltage Low
TJ < TWARN, 10 kW Pullup to 3.3 V
HOT_FLG Voltage High
TJ > TWARN, 10 kW Pulldown to GND
150
170
20
160
°C
20
°C
180
°C
20
°C
30
°C
0.4
V
VPP−0.5
V
AUTO SWITCHOVER
VIN−A Quiescent Current
24
mA
VIN−A to VIN−B Risetime
TJ = 25°C, CASO_RAIL = 1 mF,
ISYS = 400 mA
200
msec
VIN−B to VIN−A Falltime
TJ = 25 °C, CASO_RAIL = 1 mF,
ISYS = 400 mA
100
msec
VIN−A Operating Threshold
VIN−A Rising
7.2
7.5
7.75
V
VIN−A Operating Hysteresis
VIN−A Falling
100
175
250
mV
Max VIN−B to VASO_RAIL Voltage Drop
ISYS = 400 mA, VIN−B = 7 V
1.5
V
Max VIN−H to VASO_RAIL Voltage Drop
ISYS = 400 mA, VIN−H = 7.5 V
2.0
V
96
%
2.5
%
RESET (RST Pin)
RESET Threshold
% of VOUT2
90
Hysteresis
% of VOUT2
Reset Voltage High
10 kW Pulldown to GND
Reset Voltage Low
10 kW Pullup to 3.3 V
93
VPP−0.5
V
0.4
V
7
mA
DELAY (DLY Pin)
2.4
Charge Current
Delay Trip Point Voltage
5
2.0
V
IGNITION BUFFER
Schmitt Trigger Rising Threshold
2.75
3.25
3.75
V
Schmitt Trigger Falling Threshold
0.8
1.0
1.2
V
IGNOUT Voltage Low
IGNIN = 5 V, 10 kW Pullup to 5 V
IGNOUT Leakage Current
TJ = 25°C, IGNOUT = 5 V
0.4
V
0.1
0.5
mA
3
5
mA
2.0
2.5
V
VBATT MONITOR
VBATT_MON Quiescent Current
TJ = 25°C, VBATT_MON = 13.2 V
VBATT_MON Minimum Operating Voltage
Threshold where BO_DET and HV_DET
signals become valid
http://onsemi.com
5
1.0
NCV8613B
SUPPLY VOLTAGES AND SYSTEM SPECIFICATION ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H
= VIN−B w ASO_RAIL, VPP = 5 V, VIN_S3 tied to ASO_RAIL, VBATT_MON = 0 V, IGNIN = 0 V, ISYS = 3 mA (Note 6))
Minimum/Maximum values are valid for the temperature range −40°C v TJ v 150°C unless noted otherwise. Min/Max values are
guaranteed by test, design or statistical correlation.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VBATT MONITOR
VBATT_MON Hysteresis
0.25
HV_DET Voltage High
10 kW Pulldown to GND
VBATT_MON Tied to ASO_RAIL
HV_DET Voltage Low
10 kW Pullup to 3.3 V
VBATT_MON Tied to ASO_RAIL
HV_DET Threshold
VBATT_MON Rising
16.2
HV_DET Hysteresis
VBATT_MON Falling
0.2
BO_DET Voltage High
10 kW Pulldown to GND
VBATT_MON Tied to ASO_RAIL
BO_DET Voltage Low
10 kW Pullup to 3.3 V
VBATT_MON Tied to ASO_RAIL
BO_DET Threshold
VBATT_MON Falling
7
BO_DET Hysteresis
VBATT_MON Rising
V
VPP−0.5
V
0.35
0.4
V
17.8
V
0.5
V
VPP−0.5
V
0.4
V
7.5
8
V
0.2
0.35
0.5
V
3
5
6
V
0.1
0.5
mA
VPP PIN
VPP Voltage Range
Leakage Current
4.
5.
6.
TJ = 25°C
iq is equal to IVIN−B + IVIN−H − ISYS
ISHDN is equal to IVIN−B + IVIN−H
ISYS is equal to IOUT1 + IOUT2 + IOUT3
http://onsemi.com
6
NCV8613B
ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H = VIN−B w ASO_RAIL, VPP = 5 V, VIN_S3 tied to ASO_RAIL,
VBATT_MON = 0 V, IGNIN = 0 V, ISYS = 3 mA (Note 6)) Min/Max values are valid for the temperature range −40°C vTJ v 150 °C unless
noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
4.9
5
5.1
V
500
mV
LOW DROP−OUT LINEAR REGULATOR 1 (LDO1) SPECIFICATION
Output Voltage
Dropout (ASO_RAIL − VOUT1)
IOUT1 = 0 mA to 100 mA,
7 V < ASO_RAIL < 18 V
VDR1
IOUT1 = 100 mA (Note 7)
Load Regulation
IOUT1 = 0 mA to 100 mA, VIN_B = 13.2 V
0
75
mV/mA
Line Regulation
IOUT1 = 1 mA, 7 V < ASO_RAIL < 18 V
0
2
mV/V
Output Current Limit
Output Load Capacitance Range
Output Load Capacitance ESR Range
(Notes 8 and 9)
200
Co
ESRCo
mA
Output Capacitance for Stability
1.0
100
mF
Cap ESR for Stability
0.01
13
W
DVOUT1 (ASO Low to High Transient)
TJ = 25 °C , IOUT1 = 100 mA, ISYS = 400
mA, CASO_RAIL = 1 mF, ESRCo = 0.01 W,
Co = 10 mF, VIN−A falling
70
100
$mV
DVOUT1 (ASO high to Low Transient)
TJ = 25 °C , IOUT1 = 100 mA, ISYS = 400
mA, CASO_RAIL = 1 mF, ESRCo = 0.01 W,
Co = 10 mF, VIN−A rising
70
100
$mV
VIN_B = 13.2 V, 0.5 VPP, 100 Hz
60
Power Supply Ripple Rejection (Note 8)
PSRR
Startup Overshoot
IOUT1 = 0 mA to 100 mA
dB
3
%
3.366
V
1.5
V
LOW DROP−OUT LINEAR REGULATOR 2 (LDO2) SPECIFICATION
Output Voltage
Dropout (ASO_RAIL − VOUT2)
IOUT2 = 0 mA to 300 mA,
7 V < ASO_RAIL < 18 V
VDR2
3.234
3.3
IOUT2 = 300 mA (Note 7)
Load Regulation
IOUT2 = 0 mA to 300 mA, VIN_B = 13.2 V
0
66
mV/mA
Line Regulation
IOUT2 = 1 mA,
7 V < ASO_RAIL < 18 V
0
1.2
mV/V
Output Current Limit
Output Load Capacitance Range
Output Load Capacitance ESR Range
(Notes 8 and 9)
400
mA
Co
Output Capacitance for Stability
1.0
100
mF
ESRCo
Maximum Cap ESR for stability
0.01
10
W
DVOUT2 (ASO Low to High Transient)
TJ = 25 °C , IOUT2 = 300 mA, ISYS = 400
mA, CASO_RAIL = 1 mF, ESRCo = 0.01 W, Co
= 22 mF, VIN−A falling
30
66
$mV
DVOUT2 (ASO high to Low Transient)
TJ = 25 °C , IOUT2 = 300 mA, ISYS = 400
mA, CASO_RAIL = 1 mF, ESRCo = 0.01 W, Co
= 22 mF, VIN−A rising
30
66
$mV
VIN_B = 13.2 V, 0.5 VPP, 100 Hz
60
Power Supply Ripple Rejection (Note 8)
PSRR
Startup Overshoot
IOUT2 = 0 mA to 300 mA
dB
3
%
3.366
V
LOW DROP−OUT LINEAR REGULATOR 3 (LDO3) SPECIFICATION
Output Voltage
VOUT3
IOUT3 = 0 mA to 400 mA,
7 V v VIN_S3 v 18 V
Dropout (VIN_S3 − VOUT3)
VDR3
IOUT3 = 300 mA (Note 7)
Output Current Limit
3.234
3.3
1.5
400
V
mA
Load Regulation
IOUT3 = 0 mA to 300 mA,
VIN_B = 13.2 V
0
66
mV/mA
Line Regulation
IOUT3 = 1 mA,
7 V v VIN_S3 v 18 V
0
1.2
mV /V
http://onsemi.com
7
NCV8613B
ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H = VIN−B w ASO_RAIL, VPP = 5 V, VIN_S3 tied to ASO_RAIL,
VBATT_MON = 0 V, IGNIN = 0 V, ISYS = 3 mA (Note 6)) Min/Max values are valid for the temperature range −40°C vTJ v 150 °C unless
noted otherwise. Min/Max values are guaranteed by test, design or statistical correlation.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
LOW DROP−OUT LINEAR REGULATOR 3 (LDO3) SPECIFICATION
Output Load Capacitance Range
Output Load Capacitance ESR Range
(Notes 8 and 9)
Co
ESRCo
Output Capacitance for Stability
1.0
100
mF
Maximum Capacitance ESR for stability
0.01
12
W
DVOUT3 (ASO Low to High Transient)
TJ = 25 °C , IOUT3 = 300 mA, ISYS = 400
mA, CASO_RAIL = 1 mF, ESRCo = 0.01 W, Co
= 47 mF, VIN−A falling
30
66
$mV
DVOUT3 (ASO high to Low Transient)
TJ = 25 °C , IOUT3 = 300 mA, ISYS = 400
mA, CASO_RAIL = 1 mF, ESRCo = 0.01 W, Co
= 47 mF, VIN−A rising
30
66
$mV
VIN_B = 13.2 V, 0.5 VPP, 100 Hz
60
Power Supply Ripple Rejection (Note 8)
Startup Overshoot
PSRR
IOUT3 = 0 mA to 300 mA
dB
3
%
7. Dropout voltage is measured when the output voltage has dropped 100 mV relative to the nominal value obtained with ASO_RAIL = VIN_S3
= 13.2 V.
8. Not tested in production. Limits are guaranteed by design.
9. Refer to CIRCUIT DESCRIPTION Section for Stability Consideration
ORDERING INFORMATION
Device
NCV8613BMNR2G
Conditions
No Enable, LDO2 Reset monitor
Package
Shipping
20 Lead DFN, 5x6
(Pb−Free)
2500 / Tape & Reel
http://onsemi.com
8
3
VIN-H
VIN-A
VOUT3
VOUT2
20
8V
19
18
Output
Filter
4
VIN-B
VIN_S3
3.3Vs
Output
Filter
2
ASO_RAIL
LDO3
VOUT3
1
LDO2
VOUT2
VBATT
8V
AUTO SWITCHOVER
Oring Diodes &
Filter
NCV8613B
3.3Vs
VBATT_MON
Ignition
Filter
HOT_FLG
Ignition
8
10
11
12
Power
Amplifier
HOT_FLG
IGNIN
IGNOUT
VOUT1
VPP
RST
DLY
Output
Filter
BO_DET
LDO1
VOUT1
7
HV_DET
RESET /
DELAY
NC
6
MONITORING
LOGIC
HV_DET
BO_DET
VPP
INGITOIN
BUFFER
5
17
16
5Vs
HOT_FLG_S
HV_DET
BO_DET
RST
15
DLY
14
SMPS1 Power Stage
8V output, 4A ILIMIT
DVD ROM
Drive
6
8V
7
8
9
HOT_FLG
OCSET
BST2
BST1
VIN_SW
3
34
SN2
SN1
GL1
SW_FB2
SW_FB1
SYNC
COMP1
SYS_EN
HS_EN
LDO_EN
HOT_FLG
5V
Misc. 5 V
Logic
LDO_EN
3.3V
Misc. 3.3 V
Logic
HOT_FLG
VBATT
25
23
GH1
COMP2
4
38
24
27
28
SMPS2 Power Stage
5V output, 2A ILIMIT
5
HS_EN
SMPS2
VOUT2
VBATT
26
MAIN
SMPS1
VOUT1
HS_EN
LDO_EN
SYS_EN
Main C
3.3Vs
NCV8855
33
Body CAN
VPP
NCV8613B
NCV8613
SYS_EN
SDARS
5V
Headunit CAN
USB
Connector
37
VBATT
2
39
22
ISNS2+
ISNS1-
ISNS2-
LR_G1
30
31
LR_FB1
VIN
29
32
HIGH-SIDE
SWITCH
HS_S
21
LDO2 Power
Stage
3.3V output, 1A
ILIMIT
40
ISNS1+
LDO2
VOUT4
8.5V
1
LDO1
VOUT3
AM/FM Tuner
LDO1 Power
Stage
8.5V output,
0.4A ILIMIT
VBATT
3.3V
Main DSP
Active
Antenna
Fan
Figure 2. Automotive Radio System Block Diagram Example NCV8613B with NCV8855
http://onsemi.com
9
NCV8613B
CIRCUIT DESCRIPTION
Auto Switchover Circuitry
The auto switchover circuit is designed to insure
continuous operation of the device, automatically switching
the input voltage from the ASO_RAIL input, to the VIN−B
input, to the VIN−H input depending on conditions. The
primary input voltage pin is ASO_RAIL, which is driven
from the 8 V supply. When this voltage is present it will drive
the output voltages. Regardless of whether the 8 V supply is
available, the reference and core functions of the device will
be driven by the higher of VIN−B and VIN−H. The
switchover control circuitry will be powered solely by the
8 V supply, via VIN−A.
When the 8 V supply is not present, the gates of the 2
P−FET switches will be pulled to ground, turning the
switches on. In this condition, the VIN−B and VIN−H
voltages will be diode or’ed, with the higher voltage
powering the chip. The VIN−H voltage will be one diode
lower than the VIN−B voltage, thereby forcing the VIN−B
voltage to be dominant supply.
In the event that both the 8 V supply and the VIN−B supply
are not present, the VIN−H supply will be powering the
device. The VIN−H supply is then fed from a recommended
1000 mF cap. The duration of VIN−H supply is dependent on
output current. It is intended as protection against temporary
loss of battery conditions.
In the event of a double battery, or prolonged high voltage
condition on the battery line, a bleed transistor has been
included on the VIN−H line. With the large hold−up cap on
VIN−H, the voltage on that pin has the potential to remain
in an elevated position for an extended period of time. The
main result of this condition would be an
Overvoltage Shutdown of the device. In order to avoid this
condition, a transistor that is connected to the
Overvoltage Shutdown signal is tied to the VIN−H line. This
transistor will become active in a high voltage event,
allowing the hold−up cap to discharge the excess voltage in
a timely manner.
In the Block Diagram, Figure 1, CASO_RAIL is listed as a
1 mF capacitor. It is required for proper operation of the
device that CASO_RAIL is no larger than 1 mF.
During a switchover event, a timer in the output stages
prepares the regulator in anticipation of change in input
voltage. The event results in a hitch in the output waveforms,
as can be seen in Figure 3.
IOUT = 100 mA
COUT = 47 mF
Figure 3. VOUTX Response to ASO Switchover Event
VIN−B/VIN−H Minimum Operating Voltage
The internal reference and core functions are powered by
either the VIN−B or VIN−H supply. The higher of the two
voltages will dominate and power the reference. This
provides quick circuit response on start−up, as well as a
stable reference voltage. Since the VIN−B voltage will come
up much more quickly than the VIN−H voltage, initially, the
VIN−B voltage will be running the reference. In the case of
any transient drops on VIN−B, the VIN−H supply, with its
large hold−up capacitor, will then be the dominant voltage,
and will be powering the reference.
For proper operation of the device, VIN−B or VIN−H
must be at least 4.5 V. Below that voltage the reference will
not operate properly, leading to incorrect functioning by the
device. VIN−B or VIN−H must be greater than 4.5 V
regardless of the voltage on the VIN−A pin.
Internal Soft−Start
The NCV8613B is equipped with an internal soft−start
function. This function is included to limit inrush currents
and overshoot of output voltages. The soft−start function
applies to all 3 regulators.
The soft−start function kicks in for start up, start up via
enable, start up after thermal shutdown, and startup after an
over voltage condition.
LDO3 is not subject to soft−start under all conditions. The
LDO3 output is not affected by overvoltage shutdown, and
http://onsemi.com
10
NCV8613B
The maximum dissipation the NCV8613B can handle is
given by:
PD(max) = (TJ(max)−TA)/RthJA
See Figure 18 for RthJA versus PCB Area.
RthJA could be further decreased by using Multilayer PCB
and/or if Air Flow is taken into account.
therefore is not effected by the soft−start function upon the
device’s return from an over voltage condition. Also, when
VIN_S3 is connected to an independent supply and the
supply is made available after the soft−start function, LDO3
will not have an independent soft−start.
LDO1 Regulator
The LDO1 error amplifier compares the reference voltage
to a sample of the output voltage (VOUT1) and drives the gate
of an internal PFET. The reference is a bandgap design to
give it a temperature−stable output.
IGNOUT Circuitry
The IGNOUT pin is an open drain output Schmitt Trigger,
externally pulled up to 3.3 V via a 10 kW resistor. The
IGNOUT pin can be used to monitor the ignition signal of
the vehicle, and send a signal to mute an audio amplifier
during engine crank. The IGNIN pin is ESD protected, and
can handle peak transients up to 45 V. An external diode is
recommended to protect against negative voltage spikes.
The IGNOUT circuitry requires the device to be enabled
for proper operation.
LDO2 Regulator
The LDO2 error amplifier compares the reference voltage
to a sample of the output voltage (VOUT2) and drives the gate
of an internal PFET. The reference is a bandgap design to
give it a temperature−stable output.
LDO3 Regulator
VPP Function
The LDO3 error amplifier compares the reference voltage
to a sample of the output voltage (VOUT3) and drives the gate
of an internal PFET. The reference is a bandgap design to
give it a temperature−stable output
The reset and warning circuits utilize a push−pull output
stage. The high signal is provided by VPP. VPP is an
externally fed signal that can be tied to an output, or tied to
another regulated voltage signal, typically 5 V, but as low as
3.0 V. Under this setup, and any setup where LDO’s 1−3 are
tied to VPP, loss of the VPP signal can occur if the pull up
voltage is reduced due to over current, thermal shutdown, or
overvoltage conditions.
Stability Considerations
The output or compensation capacitors, COUTX help
determine three main characteristics of a linear regulator:
startup delay, load transient response and loop stability. The
capacitor values and type should be based on cost,
availability, size and temperature constraints. Tantalum,
aluminum electrolytic, film, or ceramic capacitors are all
acceptable solutions, however, attention must be paid to
ESR constraints. The aluminum electrolytic capacitor is the
least expensive solution, but, if the circuit operates at low
temperatures (−25°C to −40°C), both the value and ESR of
the capacitor will vary considerably. The capacitor
manufacturer’s data sheet usually provides this information.
The value for each output capacitor COUTX shown in
Figures 20 − 25 should work for most applications;
however, it is not necessarily the optimized solution.
Stability is guaranteed at the following values:
Reset Outputs
The Reset Output is used as the power on indicator to the
Microcontroller. The NCV8613B Reset circuitry monitors
the output on LDO2.
This signal indicates when the output voltage is suitable
for reliable operation. It pulls low when the output is not
considered to be suitable. The Reset circuitry utilizes a push
pull output stage, with VPP as the high signal. In the event
of the part shutting down via Battery voltage or Enable, the
Reset output will be pulled to ground.
The input and output conditions that control the Reset
Output and the relative timing are illustrated in Figure 4,
Reset Timing. Output voltage regulation must be maintained
for the delay time before the reset output signals a valid
condition. The delay for the reset output is defined as the
amount of time it takes the timing capacitor on the delay pin
to charge from a residual voltage of 0 V to the Delay timing
threshold voltage VD of 2 V. The charging current for this is
ID of 5 mA. By using typical IC parameters with a 10 nF
capacitor on the Delay Pin, the following time delay is
derived:
tRD = CD * VDU / ID
tRD = 10 nF * (2 V)/ (5 mA) = 4 ms
Other time delays can be obtained by changing the CD
capacitor value. The Delay Time can be reduced by
decreasing the capacitance of CD. Using the formula above,
delay can be reduced as desired. Leaving the Delay Pin open
COUT1 w 47 mF, ESR v 10 W
COUT2 w 47 mF, ESR v 10 W
COUT3 w 47 mF, ESR v 10 W
Actual limits are shown in graphs in the Typical
Performance Characteristics section.
Thermal
As power in the NCV8613B increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the NCV8613B has good thermal conductivity through the
PCB, the junction temperature will be relatively low with
high power applications.
http://onsemi.com
11
NCV8613B
typically 160°C to 180°C. The Hot Flag signal will remain
low until the junction temperature drops below the Hot Flag
threshold.
The Hot_Flag circuitry does not run off the
VBATT_MON Pin, and can not be disabled by grounding
VBATT_MON.
Each of the three warning circuits utilizes a push−pull
output stage. The high signal is provided by VPP. When VPP
is tied to an output of the NCV8613B, the signal will go low
if the corresponding output shuts down due to a fault
condition.
is not desirable as it can result in unwanted signals being
coupled onto the pin.
VBATT_MON and Warning Flags
The NCV8613B is equipped with High Voltage
Detection, Brown Out Detection, and High Temperature
Detection circuitry. The Overvoltage Shutdown, High
Voltage, and Brown Out Detection circuitry are all run off
the VBATT_MON input. If this functionality is not desired,
grounding of the VBATT_MON pin will turn off the
functions.
The HV_DET and BO_DET signals are in a high
impedance state until the VBATT_MON circuitry reaches it
minimum operating voltage, typically 1.0 V to 2.5 V. At that
point the BO_DET signal will be held low, while the
HV_DET signal will go high. The BO_DET signal will go
high once the VBATT_MON signal reaches the Brown Out
Threshold, typically 7 V to 8 V. The BO_DET signal will
stay high until the VBATT_MON voltage drops below the
Brown Out Threshold. The HV_DET signal will stay high
until the VBATT_MON voltage rises above the HV_DET
threshold, typically 16.2 V to 17.8 V. The HV_DET signal
will reassert high once the HV_DET signal crosses the
HV_DET threshold going low.
The NCV8613B is also equipped with a Hot Flag pin
which indicates when the junction temperature is
approaching thermal shutdown. The Hot Flag signal will
remain high as long as the junction temperature is below the
Hot flag threshold, typically 140°C to 160°C. This pin is
intended as a warning that the junction temperature is
approaching the Thermal Shutdown threshold, which is
Overvoltage Shutdown
The NCV8613B is equipped with overvoltage shutdown
(OVS) functionality. The OVS is designed to turn on when
the VBATT_MON signal crosses 17 V. If the
VBATT_MON pin is tied to ground, the OVS functionality
will be disabled.
When OVS is triggered, LDO1 and LDO2 will both be
shut down. LDO3 is run off a separate input voltage line,
VIN_S3, and will not shutdown in this condition. Once the
OVS condition has passed, LDO1 and LDO2 will both turn
back on.
The VIN−H line is equipped with a bleed transistor to
prevent a continued OVS condition on the chip once the high
battery condition has subsided. This transistor is needed to
discharge the high voltage from the VIN−H hold−up
capacitor. This transistor will only turn on when an OVS is
detected on−chip, and will turn off as soon as the OVS
condition is no longer detected by the chip.
Load Dump
17 V
Vin
Vout Reset
Threshold
LDOX
Delay
Reset
Power On Reset
Overload on Output
Over Voltage On Input
Overvoltage on Input
Momentary
Glitch on Output
Figure 4. NCV8613B Reset Timing Diagram
http://onsemi.com
12
Shutdown via Input
NCV8613B
Load Dump
VIN_B
7.0 V
4.4 V
45 V
> 3.25 V
IGNIN
<1V
−100 V
5.0 V
IGNOUT
Figure 5. IGNOUT Timing Diagram
http://onsemi.com
13
NCV8613B
8V
VIN_A
Overvoltage on VIN−B
17V
13.2V
VIN_B
Voltage Clamped at 16 V
16V
13.2V
VIN_H
DVIN−H
xxV
TVIN−H
17V
13.2V
Duration of TVIN−H and
drop of DVIN−H dependant
on output load conditions
7V
ASO_RAIL
LDOX
Delay
Reset
VIN−B Turns
8V Switching Output
Loss of VIN−B
Back On
Voltage from SMPS ASIC
Undervoltage
Turns On.
8V Switching Output
Lockout
Voltage from SMPS ASIC
Turns Off.
Overvoltage
Shutdown
8V Switching
Output Voltage
from SMPS
ASIC Turns On.
Shutdown
Figure 6. Auto Switchover Circuit Timing Diagram VBATTMON Connected to ASO_RAIL
http://onsemi.com
14
NCV8613B
17V
16.5V
VBATT_MON
8V
7.85V
7.5V
2.5V
2.0V
1.5V
1.0V
VPP
HV_DET
VPP
BO_DET
Overvoltage on Input
Voltage Dip on Input
Figure 7. Warning Circuitry Timing Diagram
170°C
160°C
150°C
140°C
TJ
LDOX
VPP
HOT_FLG
Hot Flag
Recovers
Hot Flag
Triggers
Thermal
Shutdown
Thermal
Recovery
Figure 8. Thermal Shutdown Timing Diagram
http://onsemi.com
15
NCV8613B
17V
13.2V
7V
ASO_RAIL
VBATT_MON
5.0V
LDO1
3.3V
LDO2
LDO2 Reset
Threshold
3.3V
LDO3
Delay
Reset
Overvoltage
Shutdown
Glitch on LDO2
Figure 9. NCV8613B Regulator Output Timing Diagram– VIN_S3 Tied to ASO_RAIL
http://onsemi.com
16
NCV8613B
Load Dump
17V
13.2V
ASO_OUT
LDO1
LDO2
LDO3
Figure 10. NCV8613B Regulator Output Timing Diagram− VBATT_MON Grounded
http://onsemi.com
17
NCV8613B
3.40
IOUT1 = 100 mA
5.08
VOUT2, OUTPUT VOLTAGE (V)
VOUT1, OUTPUT VOLTAGE (V)
5.10
5.06
5.04
5.02
5.0
4.98
4.96
4.94
4.92
4.9
−40
−20
0
20
40
60
80
100
120
3.32
3.30
3.28
3.26
3.24
3.22
−20
0
20
40
60
80
100
120
TEMPERATURE (°C)
Figure 11. Output Voltage LDO1 vs
Temperature
Figure 12. Output Voltage LDO2 vs
Temperature
140
250
IOUT3 = 100 mA
VDR1, DROPOUT VOLTAGE (mV)
VOUT3, OUTPUT VOLTAGE (V)
3.34
TEMPERATURE (°C)
3.38
3.36
3.34
3.32
3.30
3.28
3.26
3.24
3.22
3.20
−40
−20
0
20
40
60
80
100
120
TJ = 25°C
VOUT1 = 5.0 V
200
150
100
50
0
140
0
20
40
60
80
TEMPERATURE (°C)
IOUT1, OUTPUT CURRENT (mA)
Figure 13. Output Voltage LDO3 vs
Temperature
Figure 14. Dropout LDO1 vs Output Current
100
1000
1200
TJ = 25°C
VOUT2 = 3.3 V
1000
VDR3, DROPOUT VOLTAGE (mV)
VDR2, DROPOUT VOLTAGE (mV)
3.36
3.20
−40
140
3.40
800
600
400
200
0
IOUT2 = 100 mA
3.38
0
50
100
150
200
250
300
900
TJ = 25°C
VOUT3 = 3.3 V
800
700
600
500
400
300
200
100
0
0
50
100
150
200
250
IOUT2, OUTPUT CURRENT (mA)
IOUT3, OUTPUT CURRENT (mA)
Figure 15. Dropout LDO2 vs Output Current
Figure 16. Dropout LDO3 vs Output Current
http://onsemi.com
18
300
NCV8613B
170
RqJA, THERMAL RESISTANCE
JUNCTION−TO−AMBIENT (°C/W)
HV_DET THRESHOLD (V)
19.5
19
18.5
18
17.5
17
16.5
1
10
100
1000
10000
100000 1000000
150
130
110
1−oz Cu single layer PCB
90
70
2−oz Cu single layer PCB
50
30
0
100
200
300
400
500
600
700
PCB COPPER AREA (mm2)
ASO−RAIL VOLTAGE RAMP (V/s)
Figure 17. HV−DET Threshold vs. dV/dt
Figure 18. RqJA vs. Copper Area
1000
RqJA, (°C/W)
100
10
1
D = 0.5
0.2
0.1
0.05
0.01
2−oz Cu single layer PCB, 100 mm2
0.1
Single Pulse
0.01
0.001
1E−06
TSP
1E−05
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 19. RqJA vs. Duty Cycle
http://onsemi.com
19
1
10
100
1000
NCV8613B
100
100
Stable Region
10
1
0.1
Unstable Region
10
ESR (W)
ESR (W)
VIN = 18 V
VOUT1 = 5 V
COUT1 = 1 mF
Unstable Region
0.01
1
0.1
0.01
Unexplored Region*
Unexplored Region*
0.001
VIN = 18 V
VOUT1 = 5 V
COUT1 = 47 mF
Stable Region
0
20
40
60
80
0.001
100
0
20
IOUT1, OUTPUT CURRENT (mA)
40
60
80
100
IOUT1, OUTPUT CURRENT (mA)
Figure 20. COUT1 ESR Stability Region − 1 mF
Figure 21. COUT1 ESR Stability Region − 47 mF
*The min specified ESR is based on Murata’s capacitor GRM31CR60J476ME19 used in measurement. The true min ESR limit might be
lower than shown.
100
100
Stable Region
10
1
0.1
ESR (W)
ESR (W)
10
Unstable Region
VIN = 18 V
VOUT2 = 3.3 V
COUT2 = 1 mF
Unstable Region
1
VIN = 18 V
VOUT2 = 3.3 V
COUT2 = 47 mF
Stable Region
0.1
0.01
0.01
Unexplored Region*
0.001
0
50
100
150
200
0.001
300
250
0
50
IOUT2, OUTPUT CURRENT (mA)
100
150
200
250
300
IOUT2, OUTPUT CURRENT (mA)
Figure 22. COUT2 ESR Stability Region − 1 mF
Figure 23. COUT2 ESR Stability Region − 47 mF
*The min specified ESR is based on Murata’s capacitor GRM31CR60J476ME19 used in measurement. The true min ESR limit might be
lower than shown.
100
100
Stable Region
10
1
0.1
ESR (W)
ESR (W)
10
Unstable Region
VIN = 18 V
VOUT3 = 3.3 V
COUT3 = 1 mF
Unstable Region
1
VIN = 18 V
VOUT3 = 3.3 V
COUT3 = 47 mF
Stable Region
0.1
0.01
0.01
0.001
0.001
Unexplored Region*
0
50
100
150
200
300
250
0
50
IOUT3, OUTPUT CURRENT (mA)
100
150
200
250
300
IOUT3, OUTPUT CURRENT (mA)
Figure 24. COUT3 ESR Stability Region − 1 mF
Figure 25. COUT3 ESR Stability Region − 47 mF
http://onsemi.com
20
NCV8613B
dt = 21.4 ms
IOUT3 = 300 mA
Figure 26. Output Response of LDO3 to Loss of Vin−B
dt = 121 ms
IOUT2 = 80 mA
Figure 27. Output Response of LDO2 to Loss of Vin−B
http://onsemi.com
21
NCV8613B
Figure 28. HV−DET Response to High Voltage − VBAT−MON tied to ASO−RAIL
Figure 29. HV−DET Response to High Voltage − VBAT−MON Left Open
http://onsemi.com
22
NCV8613B
Figure 30. BO−DET Response to LOW Voltage − VBAT−MON tied to ASO−RAIL
Figure 31. BO−DET Response to LOW Voltage − VBAT−MON Left Open
http://onsemi.com
23
NCV8613B
Figure 32. Output Response to OVS − VBAT−MON tied to ASO−RAIL
Figure 33. Output Response to OVS − VBAT−MON Left Open
http://onsemi.com
24
NCV8613B
PACKAGE DIMENSIONS
DFN20
CASE 505AB−01
ISSUE B
A
D
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. DIMENSIONS IN MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINALS AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
B
PIN 1 LOCATION
E
2X
0.15 C
2X
DIM
A
A1
A2
A3
b
D
D2
E
E2
e
K
L
TOP VIEW
0.15 C
0.10 C
A2
A
0.08 C
A1
SIDE VIEW (A3)
C
SEATING
PLANE
D2
20X
20X
L
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.65
0.75
0.20 REF
0.20
0.30
6.00 BSC
3.98
4.28
5.00 BSC
2.98
3.28
0.50 BSC
0.20
−−−
0.50
0.60
SOLDERING FOOTPRINT*
e
20X
1
10
0.78
4.24
E2
K
20
20X
b
0.10 C A B
0.05 C
3.24
PACKAGE
OUTLINE
11
5.30
1
NOTE 3
BOTTOM VIEW
0.50
PITCH
20X
0.35
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
25
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV8613B/D
Similar pages