40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ16V, SZMMBZ16V
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
http://onsemi.com
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
• SOT−23 Package Allows Either Two Separate Unidirectional
•
•
•
•
•
•
•
•
•
Configurations or a Single Bidirectional Configuration
Standard Zener Breakdown Voltage Range − 15.2 V to 16.80 V
Peak Power − 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device
SOT−23
CASE 318
STYLE 12
CATHODE 1
3 ANODE
CATHODE 2
MARKING DIAGRAM
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Publication Order Number:
MMBZ16VAL/D
MMBZ16V, SZMMBZ16V
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
Rating
Ppk
40
W
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
°PD°
225
1.8
mW°
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25°C
Derate above 25°C
°PD°
300
2.4
°mW
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
TL
260
°C
Lead Solder Temperature − Maximum (10 Second Duration)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device
Marking
MMBZ16VALT1G
16A
SZMMBZ16VALT1G*
16A
MMBZ16VTALT1G
16T
SZMMBZ16VTALT1G*
16T
Package
Shipping†
SOT−23
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
MMBZ16V, SZMMBZ16V
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
I
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
IF
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
VC VBR VRWM
QVBR
V
IR VF
IT
Test Current
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS
Device*
MMBZ16VALT1G
Device
Marking
16A
Breakdown Voltage
VRWM
IR @
VRWM
Volts
nA
Min
Nom
13
50
15.20
16
VC @ IPP (Note 5)
@ IT
VC
IPP
QVBR
Max
mA
V
A
mV/5C
16.80
1.0
23
1.7
13.8
VBR (Note 4) (V)
(VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS
Device*
MMBZ16VTALT1G
Device
Marking
16T
Breakdown Voltage
VC @ IPP (Note 5)
VRWM
IR @
VRWM
@ IT
VC
IPP
QVBR
Volts
nA
Min
Nom
Max
mA
V
A
mV/5C
13
50
15.68
16
16.32
1.0
23
1.7
13.8
VBR (Note 4) (V)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
* Include SZ-prefix devices where applicable.
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3
MMBZ16V, SZMMBZ16V
TYPICAL CHARACTERISTICS
1000
18
100
15
IR (nA)
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
21
12
9
10
1
6
0.1
3
0
−40
0
+ 50
+ 100
TEMPERATURE (°C)
0.01
−40
+ 150
Figure 1. Typical Breakdown Voltage
versus Temperature
+ 85
+ 25
TEMPERATURE (°C)
+ 125
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve is for bidirectional mode, lower curve is for
unidirectional mode)
300
PD, POWER DISSIPATION (mW)
90
C, CAPACITANCE (pF)
80
70
60
50
40
30
20
10
250
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
0
BIAS (V)
75
100
125
TEMPERATURE (°C)
Figure 3. Typical Capacitance versus Bias Voltage
Figure 4. Steady State Power Derating Curve
0
1
2
0
3
(Upper curve is for unidirectional mode, lower curve is for
bidirectional mode)
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4
25
50
150
175
MMBZ16V, SZMMBZ16V
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
tr ≤ 10 ms
VALUE (%)
100
PEAK VALUE − IPP
IPP
HALF VALUE −
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25°C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
25
Figure 5. Pulse Waveform
100
Ppk, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
1
200
Figure 6. Pulse Derating Curve
100
10
50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (°C)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1
10
100
1000
0.1
1
10
100
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW
Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
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5
1000
MMBZ16V, SZMMBZ16V
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in a SOT−23
package protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
D
FUNCTIONAL
DECODER
GND
SZMMBZ16VALT1G
Thru
SZMMBZ16VTALT1G
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
SZMMBZ16VALT1G
Thru
SZMMBZ16VTALT1G
CPU
I/O
CLOCK
CONTROL BUS
GND
SZMMBZ16VALT1G
Thru
SZMMBZ16VTALT1G
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6
MMBZ16V, SZMMBZ16V
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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MMBZ16VAL/D
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