600 W Peak Power Zener Transient Voltage Suppressor

NS6A12AT3G
600 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional
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The NS6A12AT3G is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NS6A12AT3G is ideally suited
for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
business machines, power supplies, and many other industrial/
consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
Cathode
Anode
Specification Features:
•
•
•
•
•
•
•
Peak Reverse Working Voltage of 12 V
Peak Pulse Power of 600 W (10 x 1000 msec)
ESD Rating of Class 3 (>16 kV) per Human Body Model
ESD Rating of Class 4 (>8 kV) IEC 61000−4−2
Fast Response Time
Low Profile Package
This is a Pb−Free Device
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
6LF
AYWWG
6LF
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NS6A12AT3G
Package
Shipping†
SMA
(Pb−Free)
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 0
1
Publication Order Number:
NS6A12A/D
NS6A12AT3G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
Rating
PPK
600
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PD
1.5
W
RqJL
20
50
mW/°C
°C/W
RqJA
0.5
4.0
250
W
mW/°C
°C/W
TJ, Tstg
−65 to +150
°C
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
Operating and Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive.
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
I
otherwise noted)
Symbol
IF
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
VC VBR VRWM
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
V
IR VF
IT
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni−Directional TVS
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
VC @ IPP (Note 7)
Breakdown Voltage
VRWM
(Note 5)
IR @ VRWM
V
mA
VBR (Note 6) Volts
Min
Nom
Max
@ IT
VC
IPP
mA
V
A
NS6A12AT3G
6LF
12
0.5
13.3
14.0
14.7
1.0
31
19.5
5. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C.
7. Surge current waveform per Figure 1.
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2
NS6A12AT3G
tr≤ 10 ms
100
VALUE (%)
PEAK VALUE - IPP
HALF VALUE 50
IPP
2
tP
0
0
1
2
3
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
140
120
100
80
60
40
20
0
4
0
25
50
75
100
t, TIME (ms)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. 10 × 1000 ms Pulse Waveform
Figure 2. Pulse Derating Curve
Zin
LOAD
Vin
VL
Figure 3. Typical Protection Circuit
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3
125
150
NS6A12AT3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE G
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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PUBLICATION ORDERING INFORMATION
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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For additional information, please contact your local
Sales Representative
NS6A12A/D
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