4-, 6- and 8-Channel LCD and Camera EMI Filter Arrays with ESD Protection

CM1630
LCD and Camera EMI Filter
Array with ESD Protection
Product Description
The CM1630 is a family of pi-style EMI filter arrays with ESD
protection, which integrates four, six and eight filters (C-R-C) in small
form factor UDFN 0.40 mm pitch packages. The CM1630 has
component values of 8.5 pF − 100 WĂ- 8.5 pF per channel. The
CM1630 has a cut-off frequency of 200 MHz and can be used in
applications with data rates up to 80 Mbps. The parts include ESD
diodes on every pin, which provide a very high level of protection for
sensitive electronic components that may be subjected to electrostatic
discharge (ESD). The ESD protection diodes safely dissipate ESD
strikes of ±15 kV, well beyond the maximum requirement of the
IEC61000-4-2 international standard. Using the MIL-STD-883
(Method 3015) specification for Human Body Model (HBM) ESD, the
pins are protected for contact discharges at greater than ±30 kV.
These devices are particularly well-suited for portable electronics
(e.g. wireless handsets, PDAs, notebook computers) because of their
small package and easy-to-use pin assignments. In particular, the
CM1630 is ideal for EMI filtering and protecting data and control lines
for the I/O data ports, LCD display and camera interface in mobile
handsets.
The CM1630 is housed in space-saving, low-profile 8-, 12- and
16-lead UDFN packages with a 0.4 mm pitch and is available with
lead-free finishing. This new small UDFN package provides up to
42% board space savings vs. the 0.50 mm pitch UDFN packages.
http://onsemi.com
Filter
+
ESDn*
•
•
•
•
•
•
•
Applications
•
•
•
•
April, 2011 − Rev. 3
8.5 pF
8.5 pF
1 of 4, 6 or 8 EMI/RFI Filter Channels
with Integrated ESD Protection
* See Package/Pinout Diagrams for expanded pin information.
MARKING DIAGRAM
TE MG
G
P30E MG
G
1
1
1
TE
P30E
P308E
M
G
P308E MG
G
= CM1630−04DE
= CM1630−06DE
= CM1630−08DE
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
CM1630−04DE
UDFN−8
(Pb−Free)
UDFN−12
(Pb−Free)
UDFN−16
(Pb−Free)
3000/Tape & Reel
CM1630−06DE
CM1630−08DE
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
• I/O Port Protection for Mobile Handsets, Notebook
LCD and Camera Data Lines in Mobile Handsets
LCD and Camera Modules
Handheld PCs/PDAs
Wireless Handsets
© Semiconductor Components Industries, LLC, 2011
Filter
+
ESDn*
100 W
GND
• Four, Six and Eight Channels of EMI Filtering with Integrated
•
UDFN16
DE SUFFIX
CASE 517BE
ELECTRICAL SCHEMATIC
Features
ESD Protection
Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)
Network
±15 kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30 kV ESD Protection on Each Channel (HBM)
Greater than 25 dB Attenuation (Typical) at 1 GHz
UDFN Package with 0.40 mm Lead Pitch:
♦ 4−ch. = 8−lead UDFN
♦ 6−ch. = 12−lead UDFN
♦ 8−ch. = 16−lead UDFN
Tiny UDFN Package Size:
♦ 8−lead: 1.70 mm x 1.35 mm x 0.50 mm
♦ 12−lead: 2.50 mm x 1.35 mm x 0.50 mm
♦ 16−lead: 3.30 mm x 1.35 mm x 0.50 mm
Increased Robustness against Vertical Impacts During
Manufacturing Process
These Devices are Pb−Free and are RoHS Compliant
UDFN12
DE SUFFIX
CASE 517BD
UDFN8
DE SUFFIX
CASE 517BC
Computers, PDAs, etc.
• EMI Filtering for Data Ports in Cell Phones, PDAs
or Notebook Computers
1
Publication Order Number:
CM1630/D
CM1630
PACKAGE / PINOUT DIAGRAMS
Top View
(Pins Down View)
8 7 6 5
Pin 1
Marking
Bottom View
(Pins Up View)
1 2 3 4
GND
PAD
TE
Top View
(Pins Down View)
12 11 10 9 8 7
Bottom View
(Pins Up View)
1 2 3 4 5 6
P30E
GND
PAD
Pin 1
Marking
1 2 3 4 5 6
12 11 10 9 8 7
CM1630−06DE
12 Lead UDFN Package
1 2 3 4
8 7 6 5
CM1630−04DE
8 Lead UDFN Package
Pin 1
Marking
Top View
(Pins Down View)
16 15 14 13 12 11 10 9
Bottom View
(Pins Up View)
1 2 3 4 5 6 7 8
P308E
GND
PAD
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
CM1630−08DE
16 Lead UDFN Package
Table 1. PIN DESCRIPTIONS
Device Pin(s)
Device Pin(s)
−04
−06
−08
−04
Name
−06
−08
1
1
1
FILTER1
Name
Filter + ESD Channel 1
8
12
16
FILTER1
Filter + ESD Channel 1
2
2
2
FILTER2
Filter + ESD Channel 2
7
11
15
FILTER2
Filter + ESD Channel 2
3
3
3
FILTER3
Filter + ESD Channel 3
6
10
14
FILTER3
Filter + ESD Channel 3
4
4
4
FILTER4
Filter + ESD Channel 4
5
9
13
FILTER4
Filter + ESD Channel 4
−
5
5
FILTER5
Filter + ESD Channel 5
−
8
12
FILTER5
Filter + ESD Channel 5
−
6
6
FILTER6
Filter + ESD Channel 6
−
7
11
FILTER6
Filter + ESD Channel 6
−
−
7
FILTER7
Filter + ESD Channel 7
−
−
10
FILTER7
Filter + ESD Channel 7
−
−
8
FILTER8
Filter + ESD Channel 8
−
−
9
FILTER8
Filter + ESD Channel 8
Device Ground
−
−
−
−
GND PAD
GND
Description
http://onsemi.com
2
Description
CM1630
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
−65 to +150
°C
DC Power per Resistor
100
mW
DC Package Power Rating
500
mW
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
Units
–40 to +85
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
R
Parameter
Conditions
Typ
Max
Units
80
100
120
W
Total Channel Capacitance
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
14
17
22
pF
Capacitance C1
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
7.0
8.5
11.0
pF
Stand−off Voltage
IDIODE = 10 mA
6.0
ILEAK
Diode Leakage Current (Reverse Bias)
VDIODE = 3.3 V
0.1
VSIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
ILOAD = 10 mA
ILOAD = −10 mA
VESD
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
CTOTAL
C
VDIODE
RDYN
fC
A1GHz
A800MHz − 6GHz
Resistance
Min
(Note 2)
5.6
−0.4
6.8
−0.8
V
1.0
mA
V
kV
±30
±15
Dynamic Resistance
Positive
Negative
2.3
0.9
W
Cut−off Frequency
ZSOURCE = 50 W, ZLOAD = 50 W
Channel R = 100 W,
Channel C = 8.5 pF
Absolute Attenuation @ 1 GHz from 0 dB Level
ZSOURCE = 50 W, ZLOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
30
dB
Absolute Attenuation @ 800 MHz to 6 GHz
from 0 dB Level
ZSOURCE = 50 W, ZLOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
25
dB
1. TA = 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
http://onsemi.com
3
200
MHz
CM1630
PERFORMANCE INFORMATION
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 1. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1630−04DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 2. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1630−04DE)
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4
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 3. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1630−04DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 4. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1630−04DE)
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5
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 5. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1630−06DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 6. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1630−06DE)
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6
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 7. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1630−06DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 8. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1630−06DE)
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7
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 9. Insertion Loss vs. Frequency (FILTER5 Input to GND, CM1630−06DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 10. Insertion Loss vs. Frequency (FILTER6 Input to GND, CM1630−06DE)
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8
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 11. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1630−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 12. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1630−08DE)
http://onsemi.com
9
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 13. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1630−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 14. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1630−08DE)
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10
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 15. Insertion Loss vs. Frequency (FILTER5 Input to GND, CM1630−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 16. Insertion Loss vs. Frequency (FILTER6 Input to GND, CM1630−08DE)
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11
CM1630
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 17. Insertion Loss vs. Frequency (FILTER7 Input to GND, CM1630−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
FREQUENCY
1 GHz
6 GHz
Figure 18. Insertion Loss vs. Frequency (FILTER8 Input to GND, CM1630−08DE)
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12
CM1630
PERFORMANCE INFORMATION (Cont’d)
Capacitance (Normalized)
Typical Diode Capacitance vs. Input Voltage
DC Voltage
Figure 19. Filter Capacitance vs. Input Voltage
(normalized to capacitance at 2.5 V DC and 255C)
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13
CM1630
PACKAGE DIMENSIONS
UDFN8, 1.7x1.35, 0.4P
CASE 517BC−01
ISSUE O
A
B
D
2X
0.10 C
PIN ONE
REFERENCE
2X
0.10 C
ÉÉ
ÉÉ
ÇÇ
ÉÉ
MOLD CMPD
EXPOSED Cu
A1
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A3
DETAIL B
ALTERNATE
CONSTRUCTIONS
TOP VIEW
A
DETAIL B
0.05 C
8X
L
L1
DETAIL A
0.05 C
NOTE 4
SIDE VIEW
DETAIL A
8X
L
(A3)
L
A1
C
SEATING
PLANE
ALTERNATE TERMINAL
CONSTRUCTIONS
D2
1
8X
K
e
e/2
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.15
0.25
1.70 BSC
1.10
1.30
1.35 BSC
0.30
0.50
0.40 BSC
0.15
−−−
0.20
0.30
−−−
0.05
RECOMMENDED
SOLDERING FOOTPRINT*
E2
1.40
8
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
8X
0.40
8X b
0.10 C A B
0.05 C
NOTE 3
PACKAGE
OUTLINE
BOTTOM VIEW
1.55
0.50
8X
1
0.25
0.40 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
14
CM1630
PACKAGE DIMENSIONS
UDFN12, 2.5x1.35, 0.4P
CASE 517BD−01
ISSUE O
A
B
D
2X
0.10 C
PIN ONE
REFERENCE
2X
L1
ÉÉÉ
ÉÉÉ
0.10 C
DETAIL A
E
OPTIONAL
CONSTRUCTIONS
TOP VIEW
A
DETAIL B
(A3)
A1
0.05 C
NOTE 4
12X
A1
SIDE VIEW
6
1
K
12
C
SEATING
PLANE
ÇÇ
ÉÉ
ÉÉ
A3
DETAIL B
OPTIONAL
CONSTRUCTION
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.15
0.25
2.50 BSC
1.90
2.10
1.35 BSC
0.30
0.50
0.40 BSC
0.15
−−−
0.20
0.30
−−−
0.05
DETAIL A
D2
L
MOLD CMPD
EXPOSED Cu
0.05 C
12X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L
7
e
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
E2
12X
PACKAGE
OUTLINE
b
2.20
12X
0.40
0.10 C A B
0.05 C
NOTE 3
1.55
0.50
12X
0.40
PITCH
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
15
CM1630
PACKAGE DIMENSIONS
UDFN16, 3.3x1.35, 0.4P
CASE 517BE−01
ISSUE O
A
B
D
2X
0.10 C
PIN ONE
REFERENCE
2X
0.10 C
L1
ÉÉÉ
ÉÉÉ
DETAIL A
E
OPTIONAL
CONSTRUCTIONS
TOP VIEW
EXPOSED Cu
A
DETAIL B
0.05 C
(A3)
16X
A1
0.05 C
NOTE 4
16X
A1
SIDE VIEW
K
1
8
16
9
e
C
SEATING
PLANE
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
MOLD CMPD
ÇÇ
ÉÉ
ÉÉ
A3
DETAIL B
OPTIONAL
CONSTRUCTION
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.15
0.25
3.30 BSC
2.70
2.90
1.35 BSC
0.30
0.50
0.40 BSC
0.15
−−−
0.20
0.30
−−−
0.05
DETAIL A
D2
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L
RECOMMENDED
SOLDERING FOOTPRINT*
E2
16X
PACKAGE
OUTLINE
b
BOTTOM VIEW
3.00
16X
0.40
0.10 C A B
0.05 C
NOTE 3
1.55
0.50
16X
0.40
PITCH
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
CM1630/D
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