Data Sheet

TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
Rev. 01 — 25 August 2008
Product data sheet
1. General description
The TFF1004HN/N1 is an integrated downconverter for use in Low Noise Block (LNB)
convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
2. Features
n
n
n
n
n
n
Pre-amplifier, mixer, buffer amplifier and PLL synthesizer in one IC
Alignment-free concept
Crystal controlled LO frequency generation
Low phase noise
Switched LO frequency (9.75 GHz and 10.6 GHz)
Low spurious
3. Applications
n Ku band LNB converters for digital satellite reception (DVB-S)
4. Quick reference data
Table 1.
Quick reference data
VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified.
Symbol Parameter
VCC
ICC
NFSSB
supply voltage
supply current
single sideband noise figure
Conditions
Min Typ Max Unit
RF input and IF output AC coupled
[1]
3.0
3.3
RF input and IF output AC coupled
[1][2]
-
102 125
mA
[2][3][4][5
-
9
10
dB
-
9
10
dB
low band
3.6
V
]
high band
[2][4][5][6
]
Gconv
conversion gain
low band
[2][3][5]
26
32
35
dB
high band
[2][5][6]
26
32
35
dB
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 1.
Quick reference data …continued
VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified.
Symbol Parameter
IP3O
Conditions
Min Typ Max Unit
output third-order intercept point carrier power = −10 dBm (measured at output);
worst case is given.
low band
[2][3][7][8
10
-
-
dBm
10
-
-
dBm
]
high band
[2][6][7][8
]
[1]
DC values.
[2]
See corresponding graph in Section 13.1.2 “Parameters as function of temperature”.
[3]
Low band conditions: PRF_IN = −50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz.
[4]
Measured with band-pass filter according to Figure 4 and Figure 5.
[5]
See corresponding graph in Section 13.1.1 “Parameters as function of frequency”.
[6]
High band conditions: PRF_IN = −50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz.
[7]
measured in 50 Ω environment and calculated back towards a 75 Ω environment.
[8]
measured with carriers depicted in Table 10.
5. Ordering information
Table 2.
Ordering information
Type number
TFF1004HN/N1
Package
Name
Description
Version
HVQFN24
plastic, heatsink very thin quad flat package; no leads; 24 terminals;
body 4 × 4 × 0.85 mm
SOT616-1
TFF1004HN_N1_1
Product data sheet
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Rev. 01 — 25 August 2008
2 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
6. Block diagram
VCC(MIX)
24
14
20
RF1_GND
15
mixer
21
RF_IN
RF2_GND
RF2_GND
17
23
18
XO_TANK
XO_XTAL
XO_GND
5
4
VCC(IF)
IF_GND
IF_GND
IF_OUT
IF_GND
IF_GND
10
12
VCO_GND
VCC(PLL)
16
22
REG_V_VCO
VCC(XO)
13
19
RF1_GND
PLL_LF
11
2
PFD
CHARGE
PUMP
6
3
TFF1004HN
BANDGAP
VOLTAGE
REFERENCE
CIRCUIT
DIVIDER
7
LO_SEL
Fig 1.
1
8
PLL_GND
GND
BG_GND
9
VCC(BG)
001aai387
TFF1004HN/N1 block diagram
7. Functional diagram
LO_SEL
TFF1004HN/N1
VCC
mixer
IF gain
PLL
9.75/10.6 GHz
001aai388
Fig 2.
Functional diagram
TFF1004HN_N1_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
3 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
8. Pinning information
19 RF1_GND
20 RF1_GND
21 RF_IN
22 RF2_GND
terminal 1
index area
23 RF2_GND
24 VCC(MIX)
8.1 Pinning
PLL_GND
1
18 IF_GND
VCC(PLL)
2
17 IF_GND
XO_GND
3
VCC(XO)
4
XO_TANK
5
14 IF_GND
XO_XTAL
6
13 VCC(IF)
VCO_GND 12
9
VCC(BG)
PLL_LF 11
8
REG_V_VCO 10
7
LO_SEL
BG_GND
TFF1004HN/N1
16 IF_OUT
15 IF_GND
001aai389
Transparent top view
Fig 3.
Pin configuration
8.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
GND
0
ground (exposed die pad)
PLL_GND
1
ground [1]
VCC(PLL)
2
PLL supply voltage. Decouple against pin 1.
XO_GND
3
ground [1]
VCC(XO)
4
crystal oscillator supply voltage. Decouple against pin 3.
XO_TANK
5
crystal oscillator tank
XO_XTAL
6
50 MHz. Crystal connection. Connect other crystal terminal to
GND.
LO_SEL
7
select high or low band [2]
BG_GND
8
ground [1]
VCC(BG)
9
internal regulator supply. Decouple against pin 8.
REG_V_VCO 10
decoupling of the internal VCO supply
PLL_LF
11
loop filter PLL. Connect loop filter between this pin and pin 10.
VCO_GND
12
ground [1]
VCC(IF)
13
IF-buffer supply voltage. Decouple against pin 14.
IF_GND
14, 15, 17, 18 ground [1]
IF_OUT
16
IF-buffer output. Connect RF choke coil between this pin and
pin 13.
RF1_GND
19, 20
ground [1]
TFF1004HN_N1_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
4 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 3.
Pin description …continued
Symbol
Pin
Description
RF_IN
21
RF input. AC coupling required.
RF2_GND
22, 23
ground [1]
VCC(MIX)
24
mixer supply voltage. Decouple against pin 23.
[1]
Connect this to the exposed die pad.
[2]
See Table 4.
Table 4.
LO_SEL
LO_SEL (pin 7)
local oscillator frequency
(V)
(GHz)
0
9.75
VCC
10.60
open
10.60
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC(BG)
VCC(IF)
Conditions
Min
Max
Unit
band gap supply voltage
−0.5
+3.6
V
IF supply voltage
−0.5
+3.6
V
VCC(PLL)
PLL supply voltage
−0.5
+3.6
V
VCC(XO)
XO supply voltage
−0.5
+3.6
V
Tj
junction temperature
-
125
°C
Tstg
storage temperature
-
125
°C
10. Recommended operating conditions
Table 6.
Operating conditions
Symbol
Parameter
Tamb
Conditions
Min
Typ
Max
Unit
ambient temperature
−40
+25
+85
°C
Z0
characteristic impedance
-
50
-
Ω
Table 7.
Selection of crystal
Mode
Frequency
Load
capacitor
Frequency
stability
(MHz)
(pF)
(ppm)
fundamental
50
0 [1]
± 50 [2]
AT-cut
100
not used
50
[1]
± 50
AT-cut
100
used [3]
overtone
0
[2]
Maximum
drive level
Tank circuit
(µW)
[1]
Series resonant.
[2]
The LO will have the same frequency stability.
[3]
The components of the tank circuit are selected to form a parallel resonance at 50 MHz.
The input capacitance at XO_TANK (pin 5) is 3 pF.
TFF1004HN_N1_1
Product data sheet
Quartz cut
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
5 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
The tank circuit should have no DC path between VCC(XO) (pin 4) and XO_TANK (pin 5), therefore the
inductive branch should contain a DC block.
11. Thermal characteristics
Table 8.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
Typ
Unit
24
K/W
12. Characteristics
Table 9.
Characteristics
VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified.
Symbol
VCC
Parameter
supply voltage
Conditions
RF input and IF output AC coupled
3.0
3.3
[1][2]
-
102 125
mA
low band
[2][3]
-
-
2.5
°RMS
high band
[2][4]
-
-
2.5
°RMS
[2][3][5][6]
-
9
10
dB
[2][4][5][6]
-
9
10
dB
low band
[2][3][6]
26
32
35
dB
high band
[2][4][6]
ICC
supply current
RF input and IF output AC coupled
ϕnλ(itg)
integrated phase
noise density
integration offset frequency = 10 kHz to 13 MHz;
loop bandwidth = crossover bandwidth
NFSSB
Gconv
∆Gconv
single sideband noise low band
figure
high band
conversion gain
conversion gain
variation
Min Typ Max Unit
[1]
26
32
35
dB
low band
-
-
5
dB
high band
[2][4]
-
-
5
dB
in every 36 MHz band; high band and low band
[6]
-
-
1.5
dB
-
-
−10
dB
-
-
−10
dB
s11
input reflection
coefficient
with optimum matching structure
s22
output reflection
coefficient
fIF_OUT = 950 MHz to 2150 MHz; Z0 = 75 Ω
[7]
IP3O
output third-order
intercept point
carrier power = −10 dBm (measured at output);
worst case is given.
αL(IF)lo
local oscillator RF
leakage
local oscillator IF
leakage
low band
[2][3][7][8]
10
-
-
dBm
high band
[2][4][7][8]
10
-
-
dBm
center frequency = local oscillator frequency;
span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz
low band
[2][3][9]
-
-
−35
dBm
high band
[2][4][9]
-
-
−35
dBm
low band
[2][3][10]
-
-
−15
dBm
high band
[2][4][10]
-
-
−15
dBm
[10]
-
-
−60
dBm
center frequency = local oscillator frequency;
span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz
αresp(sp)IF_OUT spurious response on center frequency = 1.6 GHz;
pin IF_OUT
span frequency = 1.2 GHz; RBW = 30 kHz;
VBW = 100 kHz
TFF1004HN_N1_1
Product data sheet
V
[2][3]
[6]
αL(RF)lo
3.6
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
6 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
[1]
DC values.
[2]
See corresponding graph in Section 13.1.2 “Parameters as function of temperature”.
[3]
Low band conditions: PRF_IN = −50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz.
[4]
High band conditions: PRF_IN = −50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz.
[5]
Measured with band-pass filter according to Figure 4 and Figure 5.
[6]
See corresponding graph in Section 13.1.1 “Parameters as function of frequency”.
[7]
measured in 50 Ω environment and calculated back towards a 75 Ω environment.
[8]
measured with carriers depicted in Table 10.
[9]
measured with spectrum analyzer at RF_IN (pin 21); IF_OUT (pin 16) terminated with 50 Ω.
[10] measured with spectrum analyzer at IF_OUT (pin 16); RF_IN (pin 21) terminated with 50 Ω via DC block.
Table 10.
Band
Low
High
IP3O carriers
RF frequency
Carrier #1
RF frequency
Carrier #2
IP3O
low frequency
IF frequency
Carrier#1
IF frequency
Carrier#2
IP3O
high frequency
(GHz)
(GHz)
(MHz)
(MHz)
(MHz)
(MHz)
10.74
10.78
950
990
1030
1070
11.62
11.66
1830
1870
1910
1950
11.74
11.78
1100
1140
1180
1220
12.67
12.71
2030
2070
2110
2150
001aai390
40
001aai391
0
s12
(dB)
(dB)
0
s21
−1
s11
s22
−2
−40
−3
s12
−80
−4
s21
−120
−5
0
5
10
15
20
9
10
11
12
f (GHz)
Fig 4.
Filter SEI FSCM:67021
14
f (GHz)
Fig 5.
Filter SEI FSCM:67021
TFF1004HN_N1_1
Product data sheet
13
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Rev. 01 — 25 August 2008
7 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
13. Application information
L2
27 nH
IF_OUT
C11
100 pF
C5
100 nF
IF_GND
18
RF1_GND
IF_GND
17
IF_OUT
16
IF_GND
15
IF_GND
14
VCC(IF)
13
19
12
VCO_GND
C8
1 nF
RF1_GND
RF_IN
RF_IN
20
11
21
10
PLL_LF
C10
220 nF
C9
820 pF
REG_V_VCO
R1
120 Ω
TFF1004HN
RF2_GND
22
9
VCC(BG)
VCC
3.3 V
C4
100 nF
RF2_GND
23
8
24
7
VCC(MIX)
C12
47 µF
BG_GND
LO_SEL
LO_SEL
C1
100 pF
1
2
3
PLL_GND VCC(PLL)
4
C3
100 nF
C2
100 pF
5
XO_GND VCC(XO)
6
XO_TANK XO_XTAL
C6
18 pF
L1
470 nH
X1
50 MHz; series
ESR < 70 Ω
C7
4.7 nF
001aai392
For list of components see Table 11.
Fig 6.
Application diagram of TFF1004HN/N1
Table 11. List of components
The Printed Circuit Board (PCB) is a Rogers RO4223 (εr = 3.38); thickness = 0.51 mm.
For application diagram, see Figure 6.
Component Description
Value
C1
decoupling of RF and MIX domain
100 pF
C2
decoupling of PLL domain
100 pF
C3
decoupling of XO domain
100 nF
C4
decoupling of BG domain
100 nF
TFF1004HN_N1_1
Product data sheet
Remarks
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
8 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 11. List of components …continued
The Printed Circuit Board (PCB) is a Rogers RO4223 (εr = 3.38); thickness = 0.51 mm.
For application diagram, see Figure 6.
Component Description
Value
C5
decoupling of IF domain
100 nF
C6
XO_TANK circuit (only with overtone crystal)
18 pF
C7
XO_TANK circuit, DC coupling (only with overtone crystal) 4.7 nF
C8
REG_V_VCO decoupling
1 nF
C9
loop filter
820 pF
C10
loop filter
220 nF
C11
output capacitor
100 pF
C12
main supply decoupling and 22 kHz rejection
47 µF
L1
XO_TANK circuit (only with overtone crystal)
470 nH
L2
RF choke at 2.15 GHz
27 nH
R1
loop filter
120 Ω
X1
crystal; series resonant; ESR < 70 Ω
50 MHz
[1]
Remarks
[1]
[1]
maximum
value 1 nF
[1]
[1]
See Table 7.
UAF3000
3.3 V
REGULATOR
SUPPLY AND BAND/POLARIZATION SWITCHING
horizontal
polarization
1st STAGE LNA
image
reject
filter
vertical
polarization
LO_SEL
VCC
RF gain
TFF1004HN/N1
mixer
IF gain
2nd STAGE LNA
1st STAGE LNA
PLL
9.75/10.6 GHz
Fig 7.
TFF1004HN/N1 in practice
TFF1004HN_N1_1
Product data sheet
001aai393
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
9 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
13.1 Graphs
13.1.1 Parameters as function of frequency
001aai394
−60
001aai395
−60
ϕnλ
(dBc/Hz)
ϕnλ
(dBc/Hz)
−80
−80
−100
−100
−120
−120
−140
103
104
105
106
107
108
109
foffset (Hz)
−140
103
VCC = 3.3 V; fLO = 9.75 GHz.
Fig 8.
104
105
106
107
108
109
foffset (Hz)
VCC = 3.3 V; fLO = 10.6 GHz.
Phase noise density as function of
offset frequency (low band); typical values
001aai396
10
NFSSB
(dB)
Fig 9.
Phase noise density as function of
offset frequency (high band); typical values
001aai397
34
Gconv
(dB)
9
33
8
32
7
(1)
(2)
31
(1)
(2)
6
30
5
29
10
11
12
13
10
f (GHz)
12
13
f (GHz)
(1) low band
(1) low band
(2) high band
(2) high band
VCC = 3.3 V.
VCC = 3.3 V.
Fig 10. Noise figure as function of frequency;
typical values
Fig 11. Conversion gain as function of frequency;
typical values
TFF1004HN_N1_1
Product data sheet
11
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
10 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
12.75 GHz
10.70 GHz
11.70 GHz
+0.2
0.4
+5
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
−90°
001aai398
Tamb = 25 °C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 Ω.
Fig 12. Input reflection coefficient (S11) without matching structure; typical values
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
950 MHz
180°
0
0.2
0.5
2
5
2150 MHz
−0.2
−135°
1
0°
−45°
−1
−90°
0
−5
−2
−0.5
10
1.0
001aai399
Tamb = 25 °C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 Ω.
Fig 13. Output reflection coefficient (S22); typical values
TFF1004HN_N1_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
11 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
13.1.2 Parameters as function of temperature
001aai400
160
ICC
(mA)
120
80
40
0
−50
−20
10
40
70
100
Tamb (°C)
VCC = 3.3 V.
Fig 14. Supply current as function of temperature; typical values
001aai401
2.6
ϕnλ(itg)
(° RMS)
ϕnλ(itg)
(° RMS)
2.4
2.4
2.2
2.2
2.0
2.0
1.8
−50
−20
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 9.75 GHz.
001aai402
2.6
1.8
−50
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 15. Integrated phase noise density as function of
temperature (low band); typical values
Fig 16. Integrated phase noise density as function of
temperature (high band); typical values
TFF1004HN_N1_1
Product data sheet
−20
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
12 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
001aai403
10
NFSSB
(dB)
NFSSB
(dB)
9
9
8
8
7
7
6
6
5
−50
−20
10
40
70
100
Tamb (°C)
5
−50
VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz.
Fig 17. Single sideband noise figure as function of
temperature (low band); typical values
001aai405
35
Gconv
(dB)
001aai404
10
−20
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1525 MHz.
Fig 18. Single sideband noise figure as function of
temperature (high band); typical values
001aai406
35
Gconv
(dB)
34
34
33
33
32
32
31
31
30
−50
−20
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz.
Fig 19. Conversion gain as function of temperature
(low band); typical values
30
−50
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1385 MHz.
Fig 20. Conversion gain as function of temperature
(high band); typical values
TFF1004HN_N1_1
Product data sheet
−20
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
13 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
001aai407
5
∆Gconv
(dB)
∆Gconv
(dB)
4
4
3
3
2
2
1
1
0
−50
−20
10
40
70
100
Tamb (°C)
0
−50
VCC = 3.3 V; fLO = 9.75 GHz.
−20
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 21. Conversion gain variation as function of
temperature (low band); typical values
001aai409
15
001aai408
5
IP3O
(dBm)
Fig 22. Conversion gain variation as function of
temperature (high band); typical values
001aai410
15
IP3O
(dBm)
13
13
11
11
9
9
7
7
5
−50
−20
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 9.75 GHz.
5
−50
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 23. Output third-order intercept point as function
of temperature (low band); typical values
Fig 24. Output third-order intercept point as function
of temperature (high band); typical values
TFF1004HN_N1_1
Product data sheet
−20
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
14 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
001aai411
−40
αL(RF)lo
(dBm)
001aai412
−40
αL(RF)lo
(dBm)
−42
−42
−44
−44
−46
−46
−48
−48
−50
−50
−20
10
40
70
100
Tamb (°C)
−50
−50
VCC = 3.3 V; fLO = 9.75 GHz.
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 25. Local oscillator RF leakage as function of
temperature (low band); typical values
001aai413
−15
−20
αL(IF)lo
(dBm)
Fig 26. Local oscillator RF leakage as function of
temperature (high band); typical values
001aai414
−15
αL(IF)lo
(dBm)
−17
−17
−19
−19
−21
−21
−23
−23
−25
−50
−20
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 9.75 GHz.
−25
−50
10
40
70
100
Tamb (°C)
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 27. Local oscillator IF leakage as function of
temperature (low band); typical values
Fig 28. Local oscillator IF leakage as function of
temperature (high band); typical values
TFF1004HN_N1_1
Product data sheet
−20
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
15 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
14. Package outline
HVQFN24: plastic thermal enhanced very thin quad flat package; no leads;
24 terminals; body 4 x 4 x 0.85 mm
A
B
D
SOT616-1
terminal 1
index area
A
A1
E
c
detail X
e1
C
1/2 e
e
7
12
y
y1 C
v M C A B
w M C
b
L
13
6
e
e2
Eh
1/2 e
1
18
terminal 1
index area
24
19
X
Dh
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max.
A1
b
c
D (1)
Dh
E (1)
Eh
e
e1
e2
L
v
w
y
y1
mm
1
0.05
0.00
0.30
0.18
0.2
4.1
3.9
2.25
1.95
4.1
3.9
2.25
1.95
0.5
2.5
2.5
0.5
0.3
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT616-1
---
MO-220
---
EUROPEAN
PROJECTION
ISSUE DATE
01-08-08
02-10-22
Fig 29. Package outline SOT616-1
TFF1004HN_N1_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
16 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
15. Abbreviations
Table 12.
Abbreviations
Acronym
Description
BG
Band Gap
DVB-S
Digital Video Broadcasting by Satellite
ESR
Equivalent Series Resistance
IC
Integrated Circuit
IF
Intermediate Frequency
Ku band
K-under band
LO
Local Oscillator
PFD
Phase Frequency Detector
PLL
Phase-Locked Loop
RBW
Resolution BandWidth
RF
Radio Frequency
VBW
Video BandWidth
VCO
Voltage-Controlled Oscillator
XO
Crystal Oscillator
16. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TFF1004HN_N1_1
20080825
Product data sheet
-
-
TFF1004HN_N1_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
17 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
17.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
TFF1004HN_N1_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 25 August 2008
18 of 19
TFF1004HN/N1
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
19. Contents
1
2
3
4
5
6
7
8
8.1
8.2
9
10
11
12
13
13.1
13.1.1
13.1.2
14
15
16
17
17.1
17.2
17.3
17.4
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended operating conditions. . . . . . . . 5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application information. . . . . . . . . . . . . . . . . . . 8
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Parameters as function of frequency . . . . . . . 10
Parameters as function of temperature. . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 August 2008
Document identifier: TFF1004HN_N1_1