Data Sheet

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TFF1024HN
Integrated mixer oscillator PLL for satellite LNB
Rev. 1 — 13 January 2015
Product data sheet
1. General description
The TFF1024HN is an integrated downconverter for use in Low Noise Block (LNB)
convertors in a 10.70 GHz to 12.85 GHz Ku band satellite receiver system.
2. Features and benefits
 Low current consumption integrated pre-amplifier, mixer, buffer amplifier and
PLL synthesizer
 Flat gain over frequency
 Single 5 V supply pin
 Low cost 25 MHz crystal
 Crystal controlled LO frequency generation
 Switched LO frequency (selectable to 9.75 GHz, 10.00 GHz, 10.25 GHz, 10.55 GHz,
10.60 GHz, 10.75 GHz, 11.25 GHz or 11.30 GHz) with a 25 MHz crystal as reference
 Other LO frequencies within the 9.75 GHz to 11.30 GHz range can be realized by
using an alternative reference frequency
 Low phase noise
 Low spurious
 Low external component count
 Alignment-free concept
 ESD protection on all pins
3. Applications
 Ku band LNB converters for VSAT and digital satellite reception (DVB-S / DVB-S2)
4. Quick reference data
Table 1.
Quick reference data
9.75 GHz  fLO  11.30 GHz; operating conditions of Table 6 apply.
Symbol Parameter
VCC
supply voltage
Conditions
Min
Typ Max
Unit
RF input and IF output AC coupled
[1]
4.5
5
5.5
V
[1]
-
56
70
mA
-
9.0
11.0
dB
ICC
supply current
RF input and IF output AC coupled
NFSSB
single sideband noise figure
fIF = 1450 MHz; Tamb = 25 C;
10.55 GHz  fLO  10.60 GHz
fRF
RF frequency
[2]
10.70 -
12.85 GHz
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 1.
Quick reference data …continued
9.75 GHz  fLO  11.30 GHz; operating conditions of Table 6 apply.
Symbol Parameter
Conditions
Gconv
fIF = 1450 MHz
conversion gain
fLO = 10.55 GHz
fLO = 10.60 GHz
Min
Typ Max
Unit
29.8
34.3 38.8
dB
29.8
34.3 38.8
dB
s11
input reflection coefficient
10.70 GHz  fRF  12.85 GHz
-
10
-
dB
s22
output reflection coefficient
950 MHz  fIF  2150 MHz; Z0 = 75 
-
10
-
dB
IP3o
output third-order intercept point carrier power = 10 dBm (measured at output)
fIF = 1450 MHz; 9.75 GHz  fLO  10.75 GHz
14
18
-
dBm
fIF = 1250 MHz; 11.25 GHz  fLO  11.30 GHz
14
18
-
dBm
[1]
DC values.
[2]
See Table 4 for specific values at certain settings of pins HB0, HB1 and HB2.
5. Ordering information
Table 2.
Ordering information
Type number
TFF1024HN
Package
Name
Description
Version
DHVQFN16
plastic dual in-line compatible thermal enhanced very thin quad flat
package; no leads;16 terminals; body 2.5  3.5  0.85 mm
SOT763-1
6. Functional diagram
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Fig 1.
TFF1024HN
Product data sheet
DDD
Functional diagram
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
7. Pinning information
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Fig 2.
Pin configuration
7.2 Pin description
Table 3.
Pin description
Symbol
Pin Description
GND
0
ground (exposed die pad)
RF_GND3 1
RF ground. Connect this pin to the exposed die pad landing.
RF_GND1 2
RF ground. Connect this pin to the exposed die pad landing and the RF input CPW line.
n.c.
3
not connected. Connect to RF on PCB. [1]
RF
4
RF input.
RF_GND2 5
RF ground. Connect this pin to the exposed die pad landing and the RF input CPW line.
HB0
6
LO frequency selection, LSB. Connect this pin to GND for "0", leave open for "1". Also see Table 4.
n.c.
7
not connected. Use this pin to route the ground layer on top of the PCB to the exposed die pad.
LF
8
Loop filter PLL. Connect loop filter between this pin and VREG (pin 9).
VREG
9
Regulated output voltage for PLL loop filter. Connect loop filter to this pin. Decouple against die pad via
pin 7.
HB2
10
LO frequency selection, MSB. Connect this pin to GND for "0", leave open for "1". Also see Table 4.
XO2
11
Crystal connection 2. Connect crystal between this pin and XO1 (pin 12).
XO1
12
Crystal connection 1. Connect crystal between this pin and XO2 (pin 11).
HB1
13
LO frequency selection. Connect this pin to GND for "0", leave open for "1". Also see Table 4.
IF
14
IF output
IF_GND
15
IF output ground. Connect this pin to the exposed die pad landing and the output transmission line ground.
VCC
16
Supply voltage
[1]
The distance between the outer edges of pin 2 and pin 3 is 740 m. This gives an optimum transition from a 1.1 mm wide, Z0 = 50  line
to the TFF1024HN on a Rogers RO4223 Printed-Circuit Board (PCB) material of 0.5 mm height.
TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
8. Functional description
8.1 LO frequency selection
Table 4.
LO frequency selection table
See Figure 1 for the functional diagram.
fLO
fxtal
HB2
HB1
HB0
fRF (GHz)
fIF (MHz)
(GHz)
(MHz)
(pin 10)
(pin 13)
(pin 6)
Min
Max
Min
Max
9.75
25
0
0
0
10.70
11.90
950
2150
10.00
25
0
0
1
10.95
12.15
950
2150
25
0
1
0
11.20
12.40
950
2150
10.25
[1]
24.76
0
1
1
11.40
12.60
950
2150
10.55
25
0
1
1
11.50
12.70
950
2150
10.60
25
1
0
0
11.55
12.75
950
2150
10.75
25
1
0
1
11.70
12.85
950
2100
11.25
25
1
1
0
12.20
12.85
950
1600
11.30
25
1
1
1
12.25
12.85
950
1550
10.45
[1]
For frequencies that cannot be achieved using the 25 MHz crystal choose the closest frequency and adapt the crystal frequency.
Example: 10.45 GHz. This can be achieved by choosing 10.55 GHz. The divider ratio is 422. 10.45 GHz will be achieved with a crystal
frequency of 10.45 GHz / 422 = 24.76303 MHz.
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC
supply voltage
Vi
input voltage
Conditions
Min
Max
Unit
0.5
+6
V
on pin HB0
0.5
+6
V
on pin HB1
0.5
+6
V
on pin HB2
storage temperature
Tstg
0.5
+6
V
40
+125
C
10. Recommended operating conditions
Table 6.
Operating conditions
Symbol
Parameter
Conditions
[1]
Min
Typ
Max
Unit
4.5
5
5.5
V
VCC
supply voltage
RF input and IF output AC coupled
Vi
input voltage
on pin HB0
0
-
2.7
V
on pin HB1
0
-
2.7
V
on pin HB2
0
-
2.7
V
during 30 ms only at supply power-on
300
-
-
mA
40
+25
+85
C
-
50
-

10.70
-
12.85
GHz
ICC(startup) start-up supply current
Tamb
ambient temperature
Z0
characteristic impedance
fRF
RF frequency
TFF1024HN
Product data sheet
[2]
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 6.
Operating conditions …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLO
LO frequency
HB2 = 0; HB1 = 0; HB0 = 0
[3]
-
9.75
-
GHz
HB2 = 1; HB1 = 1; HB0 = 1
[4]
-
11.30
-
GHz
[2]
950
-
2150
MHz
IF frequency
fIF
CL(xtal)
crystal load capacitance
-
10
-
pF
ESR
equivalent series resistance
-
-
40

fxtal
crystal frequency
-
25
-
MHz
[1]
DC values.
[2]
See Table 4 for specific values at certain settings of pins HB0, HB1 and HB2.
[3]
The minimum LO frequency is specified. See Table 4 for other specific values at certain settings of pins HB0, HB1 and HB2.
[4]
The maximum LO frequency is specified. See Table 4 for other specific values at certain settings of pins HB0, HB1 and HB2.
11. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Rth(j-c)
thermal resistance from junction to case
Conditions
Typ
Unit
35
K/W
12. Characteristics
Table 8.
Characteristics
9.75 GHz  fLO  11.30 GHz; operating conditions of Table 6 apply.
Symbol
ICC
Parameter
supply current
Conditions
RF input and IF output AC coupled
Min Typ Max Unit
[1]
-
56
70
mA
integration offset frequency = 1 kHz to 1 MHz
-
1.2
2.2
deg
integration offset frequency = 10 kHz to 13 MHz
-
1.2
2.2
deg
fLO = 9.75 GHz
-
8.8
10.8 dB
10.55 GHz  fLO  10.60 GHz
-
9.0
11.0 dB
-
9.5
11.5 dB
n(itg)RMS RMS integrated phase noise loop bandwidth = crossover bandwidth; low ESR
density
crystal used (ESR < 20 )
NFSSB
single sideband noise figure fIF = 1450 MHz; Tamb = 25 C
fIF = 1250 MHz; Tamb = 25 C
11.25 GHz  fLO  11.30 GHz
Gconv
conversion gain
fIF = 1450 MHz
fLO = 9.75 GHz
29.6 34.1 38.6 dB
fLO = 10.00 GHz
29.5 34.0 38.5 dB
fLO = 10.25 GHz
29.5 34.0 38.5 dB
fLO = 10.55 GHz
29.8 34.3 38.8 dB
fLO = 10.60 GHz
29.8 34.3 38.8 dB
fLO = 10.75 GHz
30.2 34.7 39.2 dB
fIF = 1250 MHz
TFF1024HN
Product data sheet
fLO = 11.25 GHz
30.2 34.7 39.2 dB
fLO = 11.30 GHz
30.1 34.6 39.1 dB
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
Table 8.
Characteristics …continued
9.75 GHz  fLO  11.30 GHz; operating conditions of Table 6 apply.
Symbol
Parameter
Conditions
Gconv/f
conversion gain variation
with frequency
over IF band; 40 C  Tamb  +85 C; VCC = 5.0 V
Min Typ Max Unit
fLO = 9.75 GHz
[2]
-
-
2.5
dB
fLO = 10.00 GHz
[2]
-
-
3.0
dB
fLO = 10.25 GHz
[2]
-
-
3.6
dB
fLO = 10.55 GHz
[2]
-
-
4.0
dB
fLO = 10.60 GHz
[2]
-
-
4.0
dB
fLO = 10.75 GHz
[2]
-
-
4.0
dB
fLO = 11.25 GHz
[2]
-
-
3.0
dB
fLO = 11.30 GHz
[2]
-
-
3.0
dB
in every 36 MHz band; 40 C  Tamb  +85 C;
VCC = 5.0 V
-
-
0.6
dB
s11
input reflection coefficient
10.70 GHz  fRF  12.85 GHz
-
10
-
dB
s22
output reflection coefficient
950 MHz  fIF  2150 MHz; Z0 = 75 
-
10
-
dB
IP3o
output third-order
intercept point
carrier power is 10 dBm (measured at the output)
fIF = 1450 MHz; 9.75 GHz  fLO  10.75 GHz
14
18
-
dBm
fIF = 1250 MHz; 11.25 GHz  fLO  11.30 GHz
14
18
-
dBm
2
6
-
dBm
output power at 1 dB
gain compression
measured at the output
2
6
-
dBm
L(RF)lo
local oscillator RF leakage
fc = fLO; span = 100 MHz; RBW = 50 kHz;
VBW = 200 kHz
-
-
35
dBm
VIL
LOW-level input voltage
on pin HB0
-
-
0.8
V
on pin HB1
-
-
0.8
V
on pin HB2
-
-
0.8
V
on pin HB0
1.6
-
2.7
V
on pin HB1
1.6
-
2.7
V
PL(1dB)
fIF = 1450 MHz; 9.75 GHz  fLO  10.75 GHz
fIF = 1250 MHz; 11.25 GHz  fLO  11.30 GHz
HIGH-level input voltage
VIH
pull-up resistance
Rpu
on pin HB2
1.6
-
2.7
V
on pin HB0
80
110
140
k
on pin HB1
80
110
140
k
on pin HB2
80
110
140
k
[1]
DC values.
[2]
See Table 4 for the corresponding fIF ranges.
TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
12.1 Graphs
DDD
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DDD
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7DPEƒ&
VCC = 5 V; fIF = 1550 MHz.
7DPEƒ&
VCC = 5 V.
(1) fLO = 9.75 GHz
(1) fLO = 9.75 GHz
(2) fLO = 10.60 GHz
(2) fLO = 11.30 GHz
(3) fLO = 11.30 GHz
Fig 3.
Conversion gain as a function of ambient
temperature; typical values
DDD
ijQȜLWJ506
GHJ
Fig 4.
Local oscillator RF leakage as a function of
ambient temperature; typical values
DDD
ijQ
G%F+]
7DPEƒ&
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VCC = 5 V; Tamb = 25 C.
VCC = 5 V; fLO = 10.55 GHz.
(1) fLO = 9.75 GHz
(2) fLO = 10.60 GHz
(3) fLO = 11.30 GHz
Fig 5.
RMS integrated phase noise density as a
function of ambient temperature;
typical values
TFF1024HN
Product data sheet
Fig 6.
Phase noise as a function of offset frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
DDD
*FRQY
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VCC = 5 V.
(1) fLO = 9.75 GHz
(2) fLO = 10.60 GHz
(3) fLO = 11.30 GHz
Fig 7.
Conversion gain as a function of RF frequency; typical values
’
DDD
(1) fRF = 10.70 GHz
(2) fRF = 12.75 GHz
Fig 8.
Input reflection coefficient (S11); typical values
TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
’
DDD
(1) fIF = 250 MHz
(2) fIF = 2150 MHz
Fig 9.
Output reflection coefficient (S22); typical values
DDD
1)
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VCC = 5 V.
(1) fLO = 9.75 GHz
(2) fLO = 10.60 GHz
(3) fLO = 11.30 GHz
Fig 10. Noise figure as function of RF frequency; typical values
TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
13. Application information
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Fig 11. Application diagram of TFF1024HN
Table 9.
List of netnames
See Figure 11.
TFF1024HN
Product data sheet
Netname
Description
GH
Gate voltage of 1st stage LNA. Horizontal polarization
DH
Drain voltage of 1st stage LNA. Horizontal polarization
GV
Gate voltage of 1st stage LNA. Vertical polarization
DV
Drain voltage of 1st stage LNA. Vertical polarization
G2
Gate voltage of 2nd stage LNA
D2
Drain voltage of 2nd stage LNA
HB0
LO frequency selection, LSB
HB1
LO frequency selection
HB2
LO frequency selection, MSB
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
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Fig 12. LNB system block diagram with TFF1024HN
TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
14. Package outline
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TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
12 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
15. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CPW
CoPlanar Waveguide
DVB-S
Digital Video Broadcasting by Satellite
DVB-S2
Digital Video Broadcasting - Satellite - Second generation
ESD
ElectroStatic Discharge
IF
Intermediate Frequency
Ku band
K-under band
LNA
Low-Noise Amplifier
LNB
Low-Noise Block
LO
Local Oscillator
LSB
Least Significant Bit
MSB
Most Significant Bit
pHEMT
Pseudomorphic High Electron Mobility Transistor
PLL
Phase-Locked Loop
RBW
Resolution BandWidth
VSAT
Very Small Aperture Terminal
V/T
Voltage / Tone
VBW
Video BandWidth
16. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TFF1024HN v.1
20150113
Product data sheet
-
-
TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
13 of 16
TFF1024HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite LNB
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
17.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
TFF1024HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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19. Contents
1
2
3
4
5
6
7
7.1
7.2
8
8.1
9
10
11
12
12.1
13
14
15
16
17
17.1
17.2
17.3
17.4
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 4
LO frequency selection . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 January 2015
Document identifier: TFF1024HN