Data Sheet

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TFF1044HN
Integrated mixer oscillator PLL for satellite quad LNB
Rev. 1 — 10 June 2015
Product data sheet
1. General description
The TFF1044HN is a 10.70 GHz to 12.75 GHz Ku band down converter for use in
universal quad and quattro Low Noise Block (LNB) in satellite receiver systems. The
device features two RF inputs (two polarizations) and four IF outputs (up to 4 active IF
paths). It integrates bias generation and control for the required external LNA stages,
image rejection filtering, LO generation, down-conversion mixers, IF amplifier stages,
voltage and tone detection on each IF output (for polarization and band selection) and the
4 (IF channels)  4 (2 polarizations, 2 bands) IF matrix switch. For flexibility, the gain can
be controlled in three discrete stages, the polarization of the RF inputs can be swapped
and the second stage LNA biasing control can be switched from pHEMT to BJT
configuration.
2. Features and benefits
 Low current consumption integrated pre-amplifier, mixer, buffer amplifier and
PLL synthesizer
 Integrated pHEMT/BJT bias control for external LNAs
 Flat gain over frequency
 Single 5 V supply pin
 Operates with a low cost 25 MHz crystal
 Crystal-controlled LO frequency generation, alignment free concept
 Dual simultaneously operating LO frequencies (9.75 GHz and 10.6 GHz)
 Adjustable step gain (30 dB, 33 dB and 36 dB)
 Integrated switch matrix
 Integrated voltage and tone detector
 Low phase noise
 Low spurious
 Low external component count
 Alignment-free concept
 36-terminal leadless plastic thermally enhanced very thin profile land grid array
package 5.0 mm  5.0 mm  0.72 mm
3. Applications
 Quad LNBs
 Quattro LNBs
 IP LNBs
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
4. Quick reference data
Table 1.
Quick reference data
VCC = 5 V; Tamb = 25 C; fLO = 9.75 GHz or fLO = 10.6 GHz; fxtal = 25 MHz; Z0 = 50  for RF inputs and Z0 = 75  for IF
outputs unless otherwise specified.
Symbol Parameter
Conditions
VCC
supply voltage
IF output AC coupled
[1]
ICC
supply current
IF output AC externally coupled; excluding
current for LNAs; single activated IF path
[1]
fRF
RF frequency
Gconv
conversion gain
Typ Max
Unit
4.3
5
V
-
145 -
5.6
mA
10.70 -
12.75 GHz
fIF = 1450 MHz (low band);
single activated IF path
low gain mode
[2]
-
30
-
dB
medium gain mode
[2]
-
33
-
dB
high gain mode
[2]
-
36
-
dB
[2]
-
8
-
dB
-
10 -
dB
-
10 -
dB
-
15
dBm
NFSSB
single sideband noise figure
high gain mode; fIF = 1450 MHz (low band)
s11
input reflection coefficient
10.70 GHz  fRF  12.75 GHz
s22
output reflection coefficient
950 MHz  fIF  2150 MHz
output third-order intercept point
high gain mode; carrier power is 10 dBm
(measured at IF output)
IP3o
Min
[1]
DC values.
[2]
See Table 12 for conversion gain selection settings.
[2]
-
5. Ordering information
Table 2.
Ordering information
Type number
TFF1044HN
TFF1044HN
Product data sheet
Package
Name
Description
Version
HVLGA36
plastic thermal enhanced very thin profile land
grid array package; no leads; 36 terminals;
SOT1359-1
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
6. Functional diagram
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DDD
Functional diagram
TFF1044HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
7. Pinning information
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Fig 2.
DDD
Pin configuration
7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
1A_DRAIN
1
Drain bias for the first stage LNA of RF path A
1A_GATE
2
Gate bias for the first stage LNA of RF path A
1AB_ISET
3
Drain current setting for first stage LNAs
XOP
4
External crystal (Xtal) positive connection. Connect Xtal between this pin
and XON (pin 6)
2AB_TYPSEL
5
Second stage LNA type select: BJT/pHEMT
XON
6
External crystal (Xtal) negative connection. Connect Xtal between this pin
and XOP (pin 4)
2AB_ISET
7
Drain/collector current setting for second stage LNAs
1B_GATE
8
Gate bias for the first stage LNA of RF path B
1B_DRAIN
9
Drain bias for the first stage LNA of RF path B
B_RFGND
10
RF ground of path B. Connect this pin to the exposed die pad landing and
the RF input transmission line
B_RFIN
11
RF input of path B. AC coupled; DC grounded
B_RFIN
12
RF input of path B. AC coupled, DC grounded
B_RFGND
13
RF ground of path B. Connect this pin to the exposed die pad landing and
the RF input transmission line
TFF1044HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
Table 3.
Pin description …continued
Symbol
Pin
Description
2B_DRAIN
14
Drain bias for the second stage LNA of RF path B
2B_GATE
15
Gate bias for the second stage LNA of RF path B
GAIN_SET
16
Conversion gain setting pin
GNDIF4
17
Ground connection of IFOUT4. Connect this pin to the exposed die pad
landing and the output transmission line ground.
IFOUT4
18
IF output 4
VTIF4
19
Voltage and tone detector input for polarity and band selection of IFOUT4
VTIF3
20
Voltage and tone detector input for polarity and band selection of IFOUT3
IFOUT3
21
IF output 3
GNDIF3
22
Ground connection of IFOUT3. Connect this pin to the exposed die pad
landing and the output transmission line ground.
VCC
23
Supply voltage
GNDIF2
24
Ground connection of IFOUT2. Connect this pin to the exposed die pad
landing and the output transmission line ground.
IFOUT2
25
IF output 2
VTIF2
26
Voltage and tone detector input for polarity and band selection of IFOUT2
VTIF1
27
Voltage and tone detector input for polarity and band selection of IFOUT1
IFOUT1
28
IF output 1
GNDIF1
29
Ground connection of IFOUT1. Connect this pin to the exposed die pad
landing and the output transmission line ground.
POL_SWAP/MODE_SEL
30
Polarity preset for RF inputs and quad/quattro mode selection
2A_GATE
31
Gate bias for the second stage LNA of RF path A
2A_DRAIN
32
Drain bias for the second stage LNA of RF path A
A_RFGND
33
RF ground. Connect this pin to the exposed die pad landing and the RF
input transmission line
A_RFIN
34
RF input of path A. AC coupled, DC grounded
A_RFIN
35
RF input of path A. AC coupled, DC grounded
A_RFGND
36
RF ground. Connect this pin to the exposed die pad landing and the RF
input transmission line
GND
exposed die pads Ground; exposed die pads should be connected
8. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC
supply voltage
Vctrl
control voltage
Vth(bsel)(p-p)
peak-to-peak band selection
threshold voltage
Pi(RF)
RF input power
Tj
junction temperature
TFF1044HN
Product data sheet
Conditions
[1][2]
fp(ctrl) = 22 kHz
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
[2]
Min
Max
Unit
0.5
+7
V
0.5
+24
V
-
2
V
-
0
dBm
-
150
C
© NXP Semiconductors N.V. 2015. All rights reserved.
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TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
Table 4.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Tstg
storage temperature
VESD
electrostatic discharge voltage
Min
Max
Unit
40
+125
C
Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001
-
2
kV
Charged Device Model (CDM) According to
JEDEC standard JESD22-C101C
-
2
kV
[1]
DC values.
[2]
On VTIF1 (pin 27), VTIF2 (pin 26), VTIF3 (pin 20) and VTIF4 (pin 19).
9. Recommended operating conditions
Table 5.
Operating conditions
Symbol
Parameter
Conditions
VCC
supply voltage
IF output AC coupled
Vctrl
control voltage
vertical selection
horizontal selection
Vth(bsel)(p-p) peak-to-peak band selection threshold voltage
Typ
Max
Unit
4.3
5
5.6
V
[1][2]
8
-
14
V
[1][2]
15.5
-
19
V
[2]
0.3
0.6
0.8
V
40
+25
+85
C
RF inputs
-
50
-

IF outputs
-
75
-

low band
-
9.75 -
GHz
high band
-
10.6 -
GHz
IF frequency
0.95
-
2.15
GHz
CL(xtal)
crystal load capacitance
-
16
-
pF
ESR
equivalent series resistance
-
-
40

fxtal
crystal frequency
-
25
-
MHz
Tamb
ambient temperature
Z0
characteristic impedance
fRF
RF frequency
fLO
LO frequency
fIF
high band; fp(ctrl) = 22 kHz
Min
[1]
10.70 -
[1]
DC values.
[2]
On VTIF1 (pin 27), VTIF2 (pin 26), VTIF3 (pin 20) and VTIF4 (pin 19).
12.75 GHz
10. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-c)
thermal resistance from junction to case
[1]
TFF1044HN
Product data sheet
Conditions
[1]
Typ
Unit
10
K/W
Simulated using finite element method resembling the device mounted in a typical application
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Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
11. Characteristics
Table 7.
Characteristics
VCC = 5 V; Tamb = 25 C; fLO = 9.75 GHz or fLO = 10.6 GHz; fxtal = 25 MHz; Z0 = 50  for RF inputs and Z0 = 75  for IF
outputs unless otherwise specified.
Symbol
Parameter
Conditions
ICC
supply current
IF output AC externally coupled; excluding
current for LNAs
ID
drain current
Min Typ
Max
Unit
four activated IF paths
[1]
-
190
-
mA
single activated IF path
[1]
-
145
-
mA
Rset_12 = 22 k connected to
1AB_ISET (pin 3)
8
10
12
mA
15 k  Rset_12  220k
1
-
15
mA
8
10
12
mA
1
-
15
mA
Rset_12 = 22 k
1.8
2
2.2
V
15 k  Rset_12  220k
1.75 -
2.3
V
-
2.7
-
V
Rset_34 = 22 k
1.8
2
2.2
V
15 k  Rset_34  220k
1.75 -
2.3
V
-
2.7
-
V
Rset_34 = 22 k
1.8
2
2.2
V
15 k  Rset_34  220k
1.75 -
2.3
V
-
2.7
-
V
-
0.9
-
V
First stage LNAs
Second stage LNAs
Rset_34 = 22 k connected to
2AB_ISET (pin 7)
15 k  Rset_34  220k
VD
drain voltage
First stage LNAs
[2]
no transistor attached
Second stage LNAs (pHEMT)
[2][3]
no transistor attached
VC
collector voltage
Second stage LNAs (BJT)
[2][4]
no transistor attached
VO
Gconv
output voltage
conversion gain
First stage LNAs; IG = 10 A
[5]
Second stage LNAs
[5]
second stage LNA = pHEMT; IG = 10 A
[3]
-
0.9
-
V
second stage LNA = BJT; IB = 50 A
[4]
-
1.4
-
V
low gain mode
[6]
-
30
-
dB
medium gain mode
[6]
-
33
-
dB
high gain mode
[6]
-
36
-
dB
low gain mode
[6]
-
30
-
dB
medium gain mode
[6]
-
33
-
dB
high gain mode
[6]
-
36
-
dB
fIF = 1450 MHz (low band);
single activated IF path
fIF = 1650 MHz (high band); single activated
IF path
TFF1044HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
Table 7.
Characteristics …continued
VCC = 5 V; Tamb = 25 C; fLO = 9.75 GHz or fLO = 10.6 GHz; fxtal = 25 MHz; Z0 = 50  for RF inputs and Z0 = 75  for IF
outputs unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
Gconv/f
conversion gain variation with
frequency
950 MHz  fIF  2150 MHz
-
-
dB
in every 36 MHz band
-
0.5
-
dB
Gconv
conversion gain variation
when switching from single activated IF path
to multiple activated IF paths
-
1.5
-
dB
NFSSB
single sideband noise figure
high gain mode
1.0
[6]
fIF = 1450 MHz (low band)
-
8
-
dB
fIF = 1650 MHz (high band)
-
8
-
dB
-
10
-
dB
s11
input reflection coefficient
10.70 GHz  fRF  12.75 GHz
s22
output reflection coefficient
950 MHz  fIF  2150 MHz
10
-
dB
-
4.5
-
dBm
[6]
-
15
-
dBm
-
1.4
-
deg
PL(1dB)
output power at
1 dB gain compression
IP3o
output third-order intercept point high gain mode; carrier power is 10 dBm
(measured at IF output)
n(itg)RMS
RMS integrated phase noise
density
IRR
image rejection ratio
[7]
-
17
-
dB
isol(ch-ch)
isolation between channels
[7]
-
30
-
dBc
L(RF)lo
local oscillator RF leakage
fLO = 9.75 GHz
-
48
-
dBm
fLO = 10.6 GHz
-
48
-
dBm
fLO = 9.75 GHz
-
46
-
dBm
fLO = 10.6 GHz
-
46
-
dBm
-
-
40
dBc
[6]
-
-
60
dBm
[8]
18
22
26
kHz
[8]
0.3
0.6
0.8
V
14
14.75 15.25 V
on POL_SWAP/MODE_SEL (pin 30)
70
110
140
k
on GAIN_SET (pin 16)
70
110
140
k
on 2AB_TYPSEL (pin 5)
70
110
140
k
L(IF)lo
local oscillator IF leakage
spurious output power
Psp
high gain mode
[6]
integration offset frequency =
10 kHz to 13 MHz
at IF outputs within IF band; RBW = 30 kHz
in the presence of the signal; carrier
power is 10 dBm (measured at IF output)
without RF signal; input terminated with
50 ; medium gain mode
fp(ctrl)
control pulse frequency
Vth(bsel)(p-p) peak-to-peak band selection
threshold voltage
Vth(psel)
polarity selection
threshold voltage
Rpd
pull-down resistance
fp(ctrl) = 22 kHz
[1][8]
[1]
DC values.
[2]
For first stage LNA on 1A_DRAIN (pin 1) or 1B_DRAIN (pin 9); for second stage LNA on 2A_DRAIN (pin 32) or 2B_DRAIN (pin 14).
[3]
2AB_TYPSEL (pin 5) is connected to GND (pHEMT for second stage LNAs).
[4]
2AB_TYPSEL (pin 5) is floating (BJT transistor for second stage LNAs); first stage LNAs stay in the configuration for pHEMT biasing.
[5]
For first stage LNA on 1A_GATE (pin 2) or 1B_GATE (pin 8); for second stage LNA on 2A_GATE (pin 31) or 2B_GATE (pin 15).
[6]
See Table 12 for conversion gain selection settings.
[7]
Measured at low band (fIF = 1450 MHz) and high band (fIF = 1650 MHz); carrier power is 10 dB m (measured at IF output).
[8]
On VTIF1 (pin 27), VTIF2 (pin 26), VTIF3 (pin 20) and VTIF4 (pin 19).
TFF1044HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
11.1 Impedance information
Table 8.
Typical input impedance
For Smith chart see Figure 27.
f
Zi(A_RFIN)
Zi(B_RFIN)
(GHz)
()
()
10.70
52.650 + j14.850
37.350 + j18.200
11.20
64.450 + j2.900
41.850 + j19.950
11.70
62.600  j11.500
49.700 + j16.350
12.20
60.400  j13.000
59.600 + j7.250
12.75
54.950  j7.900
69.300  j10.600
12. Modes of operation
12.1 IF on/off and band/polarization control logic
Activation of the IF paths is determined by the voltage applied at their corresponding VT
pins. When the DC voltage applied to any of these pins is lower than the expected
minimum value, the corresponding IF path is turned off
Selection between vertical and horizontal polarizations for each path is determined by
comparison of the DC voltage Vctrl applied at VTIF pin to a reference threshold voltage.
Selection between high band and low band depends on the presence of a 22 kHz pulse
signal applied to the VTIF pin for each IF path. In order to improve the immunity against
parasitic signals, the pulse amplitude must be larger than the threshold level for validating
the switching to high-band.
In these aspects, TFF1044HN is controlled according to the logic specified in Table 9.
Table 9.
IF and band/polarization control
Voltage
Control pulse
IF path
Polarization
Band
Vctrl < 4 V
N/A
off
N/A
N/A
8 V < Vctrl < 14 V
no control pulse frequency;
Vth(bsel)(p-p) < 100 mV
on
vertical
low
fp(ctrl) = 22 kHz;
300 mV < Vth(bsel)(p-p) < 800 mV
on
vertical
high
no control pulse frequency;
Vth(bsel)(p-p) < 100 mV
on
horizontal
low
fp(ctrl) = 22 kHz;
300 mV < Vth(bsel)(p-p) < 800 mV
on
horizontal
high
15.5 V < Vctrl < 19 V
12.2 RF path assignment logic
The vertical and horizontal polarizations are assigned to the RF path A and RF path B
inputs according to the logic Table 10. The setting for quattro mode operation is also given
in the same table.
TFF1044HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
Table 10.
polarity swap / mode selection settings
connection of POL_SWAP/MODE_SEL (pin 30) Mode
Polarity
RF input path A RF input path B
GND
quad
horizontal
vertical
float
quad
vertical
horizontal
GND via 100 k pull-down resistor
quattro [1] N/A
[1]
N/A
Quattro mode. See Table 11 for polarization and band attribution to IF ports.
12.2.1 Quattro mode
When grounded via a 100 k resistor, POL_SWAP/MODE_SEL (pin 30) sets the
TFF1044HN in quattro mode where the IF outputs are attributed to a given
polarization/band, irrespective of the signal applied to the VTIF pins.
Each IF output is assigned to a given polarization/band according to Table 11:
Table 11.
IF output assignment
IF output port
Polarization
Band
IFOUT1
A_RFIN
low
IFOUT2
A_RFIN
high
IFOUT3
B_RFIN
low
IFOUT4
B_RFIN
high
12.3 Conversion gain selection logic
The conversion gain shall be determined by the type of termination at GAIN_SET (pin 16)
following Table 12.
Table 12.
Conversion gain settings
Connection of GAIN_SET (pin 16)
Gain mode
GND
low
float
medium
GND via 100 k pull-down resistor
high
12.4 LNA selection logic
The type of transistor used for the second LNA shall be selected depending on the state of
2AB_TYPSEL (pin 5) according to Table 13.
Table 13.
Second stage LNA type selection settings
Connection of 2AB_TYPSEL (pin 5)
TFF1044HN
Product data sheet
Type of second stage LNA
RF path A
RF path B
GND
pHEMT
pHEMT
float
BJT
BJT
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Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
13. Graphs
DDD
DDD
*FRQY
G%
*FRQY
G%
I5)*+]
Measured from A_RFIN to IFOUT1.
(1) High gain mode
(2) Medium gain mode
(2) Medium gain mode
(3) Low gain mode
(3) Low gain mode
Conversion gain as a function of
RF frequency; typical values
Fig 4.
DDD
Conversion gain as a function of
RF frequency; typical values
DDD
*FRQY
G%
*FRQY
G%
I5)*+]
Measured from A_RFIN to IFOUT2.
Low band; VCC = 5 V; Tamb = 25 C.
(2) Medium gain mode
(2) Medium gain mode
(3) Low gain mode
(3) Low gain mode
Conversion gain as a function of
RF frequency; typical values
Product data sheet
I5)*+]
High band; VCC = 5 V; Tamb = 25 C.
(1) High gain mode
TFF1044HN
Measured from A_RFIN to IFOUT2.
(1) High gain mode
Fig 5.
High band; VCC = 5 V; Tamb = 25 C.
(1) High gain mode
I5)*+]
Measured from A_RFIN to IFOUT1.
Low band; VCC = 5 V; Tamb = 25 C.
Fig 3.
Fig 6.
Conversion gain as a function of
RF frequency; typical values
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11 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
1)
G%
DDD
1)
G%
I5)*+]
Measured from B_RFIN to IFOUT1.
(1) High gain mode
(2) Medium gain mode
(2) Medium gain mode
(3) Low gain mode
(3) Low gain mode
Noise figure as a function of RF frequency;
typical values
DDD
Fig 8.
Noise figure as a function of RF frequency;
typical values
DDD
1)
G%
1)
G%
I5)*+]
Measured from B_RFIN to IFOUT2.
(1) High gain mode
(2) Medium gain mode
(2) Medium gain mode
(3) Low gain mode
(3) Low gain mode
Noise figure as a function of RF frequency;
typical values
Product data sheet
I5)*+]
High band; VCC = 5 V; Tamb = 25 C.
(1) High gain mode
TFF1044HN
Measured from B_RFIN to IFOUT2.
Low band; VCC = 5 V; Tamb = 25 C.
Fig 9.
High band; VCC = 5 V; Tamb = 25 C.
(1) High gain mode
I5)*+]
Measured from B_RFIN to IFOUT1.
Low band; VCC = 5 V; Tamb = 25 C.
Fig 7.
Fig 10. Noise figure as a function of RF frequency;
typical values
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Rev. 1 — 10 June 2015
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12 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
ijQ
G%F+]
IRIIVHW+]
VCC = 5 V; Tamb = 25 C.
(1) Low band
(2) High band
Fig 11. Phase noise as a function of offset frequency; typical values
DDD
*FRQY
G%
DDD
*FRQY
G%
I5)*+]
Measured from A_RFIN to IFOUT1.
High gain mode; low band; VCC = 5 V.
I5)*+]
Medium gain mode; low band; VCC = 5 V.
(1) Tamb = +85 C
(2) Tamb = +60 C
(2) Tamb = +60 C
(3) Tamb = +35 C
(3) Tamb = +35 C
(4) Tamb = +10 C
(4) Tamb = +10 C
(5) Tamb = 15 C
(5) Tamb = 15 C
(6) Tamb = 40 C
(6) Tamb = 40 C
Fig 12. Conversion gain as a function of
RF frequency; typical values
Product data sheet
Measured from A_RFIN to IFOUT1.
(1) Tamb = +85 C
TFF1044HN
Fig 13. Conversion gain as a function of
RF frequency; typical values
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Rev. 1 — 10 June 2015
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TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
*FRQY
G%
I5)*+]
Measured from A_RFIN to IFOUT1.
Low gain mode; low band; VCC = 5 V.
(1) Tamb = +85 C
(2) Tamb = +60 C
(3) Tamb = +35 C
(4) Tamb = +10 C
(5) Tamb = 15 C
(6) Tamb = 40 C
Fig 14. Conversion gain as a function of RF frequency; typical values
TFF1044HN
Product data sheet
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Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
14 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
*FRQY
G%
DDD
*FRQY
G%
I5)*+]
Measured from A_RFIN to IFOUT1.
I5)*+]
Medium gain mode; high band; VCC = 5 V.
(1) Tamb = +85 C
(1) Tamb = +85 C
(2) Tamb = +60 C
(2) Tamb = +60 C
(3) Tamb = +35 C
(3) Tamb = +35 C
(4) Tamb = +10 C
(4) Tamb = +10 C
(5) Tamb = 15 C
(5) Tamb = 15 C
(6) Tamb = 40 C
(6) Tamb = 40 C
Fig 15. Conversion gain as a function of
RF frequency; typical values
Product data sheet
Measured from A_RFIN to IFOUT1.
High gain mode; high band; VCC = 5 V.
TFF1044HN
Fig 16. Conversion gain as a function of
RF frequency; typical values
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Rev. 1 — 10 June 2015
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15 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
*FRQY
G%
I5)*+]
Measured from A_RFIN to IFOUT1.
Low gain mode; high band; VCC = 5 V.
(1) Tamb = +85 C
(2) Tamb = +60 C
(3) Tamb = +35 C
(4) Tamb = +10 C
(5) Tamb = 15 C
(6) Tamb = 40 C
Fig 17. Conversion gain as a function of RF frequency; typical values
TFF1044HN
Product data sheet
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Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
16 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
DDD
1)
G%
1)
G%
I5)*+]
Measured from B_RFIN to IFOUT1.
High gain mode; high band; VCC = 5 V.
(1) Tamb = +85 C
(1) Tamb = +85 C
(2) Tamb = +60 C
(2) Tamb = +60 C
(3) Tamb = +35 C
(3) Tamb = +35 C
(4) Tamb = +10 C
(4) Tamb = +10 C
(5) Tamb = 15 C
(5) Tamb = 15 C
(6) Tamb = 40 C
(6) Tamb = 40 C
Fig 18. Noise figure as a function of RF frequency;
typical values
Product data sheet
I5)*+]
Measured from B_RFIN to IFOUT1.
High gain mode; low band; VCC = 5 V.
TFF1044HN
Fig 19. Noise figure as a function of RF frequency;
typical values
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Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
17 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
,3R
G%P
DDD
,3R
G%P
I,)*+]
I,)*+]
Measured from A_RFIN to IFOUT1.
Measured from A_RFIN to IFOUT1.
Low band; single activated IF path; VCC = 5 V;
Tamb = 25 C; tone separation = 33 MHz.
High band; single activated IF path; VCC = 5 V;
Tamb = 25 C; tone separation = 33 MHz.
(1) High gain mode
(1) High gain mode
(2) Medium gain mode
(2) Medium gain mode
(3) Low gain mode
(3) Low gain mode
Fig 20. Output third-order intercept point as a function
of IF frequency; typical values
DDD
,3R
G%P
Fig 21. Output third-order intercept point as a function
of IF frequency; typical values
DDD
,3R
G%P
I,)*+]
I,)*+]
Measured from A_RFIN to IFOUT1.
Measured from A_RFIN to IFOUT1.
Low band; high gain mode; VCC = 5 V; Tamb = 25 C;
tone separation = 33 MHz.
High band; high gain mode; VCC = 5 V; Tamb = 25 C;
tone separation = 33 MHz.
(1) 1 activated IF path
(1) 1 activated IF path
(2) 2 activated IF paths
(2) 2 activated IF paths
(3) 3 activated IF paths
(3) 3 activated IF paths
(4) 4 activated IF paths
(4) 4 activated IF paths
Fig 22. Output third-order intercept point as a function
of IF frequency; typical values
TFF1044HN
Product data sheet
Fig 23. Output third-order intercept point as a function
of IF frequency; typical values
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TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
DDD
ĮLVROFKFK
G%F
DDD
ĮLVROFKFK
G%F
I5)*+]
Low band; high gain mode; VCC = 5 V; Tamb = 25 C.
I5)*+]
High band; high gain mode; VCC = 5 V; Tamb = 25 C.
(1) RF input path B to RF input path A
(1) RF input path B to RF input path A
(2) RF input path A to RF input path B
(2) RF input path A to RF input path B
Fig 24. Isolation between channels as a function of
RF frequency; typical values
Fig 25. Isolation between channels as a function of
RF frequency; typical values
DDD
ijQȜLWJ506
GHJ
7DPEƒ&
VCC = 5 V.
(1) Low band
(2) High band
Fig 26. RMS integrated phase noise density as a function of ambient temperature; typical values
TFF1044HN
Product data sheet
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Rev. 1 — 10 June 2015
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19 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
%B5),1
$B5),1
’
DDD
(1) fRF = 10.70 GHz
(2) fRF = 12.75 GHz
Fig 27. Input reflection coefficient (S11); typical values
TFF1044HN
Product data sheet
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Rev. 1 — 10 June 2015
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20 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
14. Application information
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For more information see application note AN11640
Fig 28. LNB system block diagram with TFF1044HN
TFF1044HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
21 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
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Fig 29. Application diagram of TFF1044HN
TFF1044HN
Product data sheet
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Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
22 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
15. Package outline
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TFF1044HN
Product data sheet
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NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
16. Abbreviations
Table 14.
Abbreviations
Acronym
Description
BJT
Bipolar Junction Transistor
HH
Horizontal High band
HL
Horizontal Low band
IF
Intermediate Frequency
IP
Internet Protocol
Ku band
K-under band
LNA
Low Noise Amplifier
LNB
Low Noise Block
LO
Local Oscillator
pHEMT
pseudomorphic High Electron Mobility Transistor
PLL
Phase-Locked Loop
RBW
Resolution BandWidth
VH
Vertical High band
VL
Vertical Low band
VT
Voltage Tone
17. Revision history
Table 15.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TFF1044HN v.1
20150610
Product data sheet
-
-
TFF1044HN
Product data sheet
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Integrated mixer oscillator PLL for satellite quad LNB
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
TFF1044HN
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
25 of 27
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NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
TFF1044HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
26 of 27
TFF1044HN
NXP Semiconductors
Integrated mixer oscillator PLL for satellite quad LNB
20. Contents
1
2
3
4
5
6
7
7.1
7.2
8
9
10
11
11.1
12
12.1
12.2
12.2.1
12.3
12.4
13
14
15
16
17
18
18.1
18.2
18.3
18.4
19
20
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended operating conditions. . . . . . . . 6
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Impedance information . . . . . . . . . . . . . . . . . . . 9
Modes of operation . . . . . . . . . . . . . . . . . . . . . . 9
IF on/off and band/polarization control logic . . . 9
RF path assignment logic . . . . . . . . . . . . . . . . . 9
Quattro mode . . . . . . . . . . . . . . . . . . . . . . . . . 10
Conversion gain selection logic . . . . . . . . . . . 10
LNA selection logic . . . . . . . . . . . . . . . . . . . . . 10
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Application information. . . . . . . . . . . . . . . . . . 21
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 23
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24
Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Contact information. . . . . . . . . . . . . . . . . . . . . 26
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 June 2015
Document identifier: TFF1044HN
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