DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2012 1900 MHz high linear low noise amplifier Product specification Supersedes data of 2000 Sep 06 2000 Dec 04 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier FEATURES BGA2012 PINNING Low current, low voltage PIN DESCRIPTION High linearity 1 RF in High power gain 2 VC Low noise 3 VS Integrated temperature compensated biasing 4 Control pin for adjustment bias current. RF out 5, 6 GND APPLICATIONS VS handbook, halfpage RF front end 6 5 4 Low noise amplifiers, e.g. CDMA, PHs, Dect, etc. RF out DESCRIPTION BIAS CIRCUIT VC Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. 1 2 3 Top view RF in MBL251 GND Marking code: A6- Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS DC supply voltage IS DC supply current IC |s21 |2 NF CONDITIONS RF input AC coupled TYP. MAX. UNIT 3 4.5 V 7.5 mA DC control current VC = VS 0.11 mA insertion power gain in application circuit, see Fig.2; f = 1900 MHz 16 dB noise figure IS = 7 mA; f = 1900 MHz 1.7 dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER VS DC supply voltage VC voltage on control pin CONDITIONS RF input AC coupled MAX. UNIT 4.5 V VS V 15 mA 0.25 mA 70 mW IS supply current IC control current Ptot total power dissipation Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C 2000 Dec 04 forced by DC voltage on RF input MIN. Ts 100 C 2 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to solder point VALUE UNIT 350 K/W Ptot = 135 mW; Ts 100 C CHARACTERISTICS RF input AC coupled; VS = 3 V; IS = 7 mA; f = 1900 MHz; Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER IS supply current IC control current RL IN return losses input RL OUT |s21|2 NF IP3in 2000 Dec 04 return losses output insertion power gain noise figure input intercept point CONDITIONS MIN. TYP. MAX. UNIT 5 7.5 10 mA 0.11 mA typical application; see Fig.2 11 dB high IP3 (see Fig.2; stripline = 0 mm) 20 dB high IP3 (see Fig.2; stripline = 0.5 mm) 14 dB typical application; see Fig.2 9 dB high IP3 (see Fig.2; stripline = 0 mm) 10 dB high IP3 (see Fig.2; stripline = 0.5 mm) 8 dB typical application (see Fig.2) 14 dB high IP3 (see Fig.2; stripline = 0 mm) 16 dB high IP3 (see Fig.2; stripline = 0.5 mm) 14 dB typical application; see Fig.2; IS = 7 mA 1.7 dB high IP3 (see Fig.2; stripline = 0 mm) 2.2 dB high IP3 (see Fig.2; stripline = 0.5 mm) 2.3 dB typical application; see Fig.2 7 dBm high IP3 (see Fig.2; stripline = 0 mm) 7 dBm high IP3 (see Fig.2; stripline = 0.5 mm) 10 dBm 3 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 APPLICATION INFORMATION handbook, full pagewidth VS VS VC VC C5 C3 C4 BIAS CIRCUIT L2 C2 OUT C1 RF in IN RF out MLD470 SOT363 L1 GND C6 stripline Fig.2 Application circuit. List of components (see Fig.2) COMPONENT DESCRIPTION TYPICAL APPLICATION HIGH IP3 APPLICATION DIMENSIONS C1, C2 multilayer ceramic chip capacitor 100 pF 100 pF 0603 C3, C5 multilayer ceramic chip capacitor 22 nF 22 nF 0603 C4 multilayer ceramic chip capacitor C6 multilayer ceramic chip capacitor 100 nF 0805 L1 SMD inductor 3.9 nH 0603 L2 SMD inductor 3.9 nH 0603 Note 1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (r = 6.15), board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m. 2000 Dec 04 4 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier MLD471 25 handbook, halfpage gain (dB) s21 2 MLD472 20 handbook, halfpage GUM 20 BGA2012 gain (dB) (mA) 8 16 Gmax 15 12 10 8 5 4 0 s21 2 6 4 IS 2 0 0 0 1000 2000 f (MHz) 3000 0 IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 Fig.3 1 2 VC (V) 3 f = 1900 MHz; VS = 3 V; PD = 30 dBm. Insertion gain (s212), GUM and Gmax as functions of frequency; typical values. Fig.4 MLD473 20 10 IS Insertion gain and supply current as functions of control voltage; typical values. MLD474 10 handbook, halfpage handbook, halfpage s21 2 IP3out (dB) IP3in (dBm) IP3out (dBm) 0 15 −5 5 10 IP3in −10 0 5 0 10−3 10−2 IC (mA) −5 10−1 0 2 4 6 IS (mA) 8 −15 VS = VC = 3 V; PD = 30 dBm (both tones); f = 1900 MHz; f = 100 kHz. f = 1900 MHz; VS = 3 V; PD = 30 dBm. Fig.5 2000 Dec 04 Fig.6 Insertion gain as a function of control current; typical values. 5 Output and input 3rd order intercept point as functions of supply current; typical application; typical values. NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 MLD475 2 handbook, halfpage NF (dB) 1.6 1.2 0.8 0.4 0 2 4 6 IS (mA) 8 VS = VC = 3 V; f = 1900 MHz Fig.7 Noise figure as a function of supply current; typical values. Scattering parameters VS = VC = 3 V; PD = 30 dBm; Zo = 50 ; Tamb = 25 C f (MHz) s11 s21 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.775 8.390 12.527 171.1 0.005 84.90 0.742 6.684 200 0.761 16.37 12.154 163.1 0.011 79.39 0.731 13.15 400 0.709 31.51 11.213 148.6 0.020 72.23 0.689 24.85 600 0.646 44.97 10.139 136.4 0.028 66.03 0.631 34.90 800 0.581 56.47 9.061 126.1 0.034 61.82 0.573 43.40 1000 0.519 66.59 8.131 117.3 0.039 58.86 0.519 50.54 1200 0.461 75.41 7.254 109.5 0.043 58.07 0.469 57.19 1400 0.401 83.99 6.461 103.1 0.047 57.92 0.428 64.08 1600 0.350 93.12 5.869 96.39 0.051 57.26 0.396 70.03 1800 0.313 102.0 5.256 90.46 0.054 57.37 0.369 75.33 2000 0.289 110.6 4.778 85.58 0.058 58.10 0.348 80.47 2200 0.278 118.5 4.394 81.16 0.062 57.66 0.336 85.37 2400 0.276 125.0 4.051 77.28 0.066 56.08 0.333 89.83 2600 0.286 131.9 3.793 74.34 0.072 60.98 0.316 92.61 2800 0.293 136.5 3.571 70.27 0.076 60.21 0.308 94.44 3000 0.287 141.6 3.326 67.39 0.083 61.36 0.272 99.52 2000 Dec 04 6 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 0.2 0 180° 0.5 1 2 5 0° 0 100 MHz 3 GHz 1900 MHz −0.2 −0.5 −5 −2 −135° −45° −1 MLD476 1.0 −90° IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 Fig.8 Common emitter input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 135° 45° 1 GHz 500 MHz 1900 MHz 100 MHz 20 16 12 8 3 GHz 4 180° 0° −135° −45° −90° MLD477 IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 Fig.9 Common emitter forward transmission coefficient (s21); typical values. 2000 Dec 04 7 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 90° handbook, full pagewidth 135° 45° 3 GHz 20 16 12 8 4 180° 0° 100 MHz −135° −45° −90° MLD478 IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 Fig.10 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 100 MHz 3 GHz 1900 MHz −0.2 −0.5 −5 −2 −135° −45° −1 MLD479 1.0 −90° IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 Fig.11 Common emitter output reflection coefficient (s22); typical values. 2000 Dec 04 8 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2000 Dec 04 REFERENCES IEC JEDEC JEITA SC-88 9 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 2000 Dec 04 10 NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 2000 Dec 04 BGA2012 11 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp12 Date of release: 2000 Dec 04