Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MML20242H
Rev. 2, 9/2014
Enhancement Mode pHEMT
Technology (E--pHEMT)
MML20242HT1
Low Noise Amplifier
The MML20242H is a 2--stage low noise amplifier (LNA) with active bias
and high isolation for use in cellular infrastructure applications. It is designed
for a range of low noise, high linearity applications such as picocell,
femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It
operates from a single voltage supply and is suitable for applications with
frequencies from 1400 to 2800 MHz such as TD -- SCDMA, W -- CDMA,
UMTS, PCS, LTE and BWA.
1400--2800 MHz, 34 dB
24 dBm, 0.59 dB NF
E--pHEMT LNA
Features
 Low Noise Figure: 0.59 dB @ 1950 MHz
 Frequency: 1400--2800 MHz
 Unconditionally Stable over Temperature
 High Reverse Isolation: --51 dB @ 1950 MHz
 P1dB: 24 dBm @ 1950 MHz
 Small--Signal Gain: 34 dB @ 1950 MHz
 Third Order Output Intercept Point: 39.5 dBm @ 1950 MHz
 Active Bias Control (adjustable externally)
 Single 5 V Supply
 Supply Current: 160 mA
 50 Ohm Operation (some external matching required)
 Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
1400
MHz
1950
MHz
2800
MHz
Unit
Noise Figure (2)
NF
0.55
0.59
0.97
dB
Input Return Loss
(S11)
IRL
--15
--18
--18
dB
Output Return Loss
(S22)
ORL
--14
--15
--15
dB
Small--Signal Gain
(S21)
Gp
38
34
31.5
dB
P1dB
23.5
24
24
dBm
Third Order Input
Intercept Point
IIP3
1
5.5
8
dBm
Third Order Output
Intercept Point
OIP3
39
39.5
39.5
dBm
Characteristic
Power Output @
1dB Compression
QFN 3  3
Symbol
Value
Unit
Supply Voltage
VDD
6
V
Supply Current
IDD
300
mA
RF Input Power (3)
Pin
28
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
3. Measured using CW test signal.
1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit
tuned for specified frequency.
2. Noise figure value calculated with connector losses removed.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 Vdc, 163 mA, no RF applied
Symbol
Value (4)
Unit
RJC
40
C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2012--2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MML20242HT1
1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
30.6
32.5
—
dB
Input Return Loss (S11)
IRL
—
--18
—
dB
Output Return Loss (S22)
ORL
—
--15
—
dB
Power Output @ 1dB Compression
P1dB
—
24
—
dBm
IIP3
—
7
—
dBm
Third Order Output Intercept Point
OIP3
—
39.5
—
dBm
Reverse Isolation (S12)
|S12|
—
--50
—
dBm
Noise Figure (1)
NF
—
0.7
—
dB
Supply Current (2)
IDD
117
160
207
mA
Supply Voltage
VDD
—
5
—
V
Characteristic
Third Order Input Intercept Point
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
0
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
1. Noise figure value calculated with connector losses removed.
2. DC current measured with no RF signal applied.
RF
Feedback
VDD1
RF FB N.C. VDD1
12
RFMATCH
RFin
RFin
VDD2/RFout
BIAS
CIRCUIT
BIAS
CIRCUIT
RFMATCH
1
RFin
2
RFin
3
11
10
GND
9
N.C.
8
VDD2/RFout
7
N.C.
4
5
6
VBA1 N.C. VBA2
Note: Exposed backside of the package is
DC and RF ground.
VBA1
VBA2
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MML20242HT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 1950 MHz
12
VDD1
L3
R1
C8
11
L4
10
VDD2
9
1
C5
C3
L2
L1
Z2
8
2
C4
RF
OUTPUT
Z3
C2
RF
INPUT
Z1
C1
3
BIAS
CIRCUIT
C7
4
R2
5
C10
7
BIAS
CIRCUIT
6
C11
R3
C12
Z1
Z2
Z3
C13
0.248  0.021 Microstrip
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure 3. MML20242HT1 Test Circuit Schematic
Table 7. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6, C9
Components Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
3.3 nH Chip Inductor
0402HP--3N3XJLW
Coilcraft
L2, L4
10 nH Chip Inductors
0402CS--10NXJLW
Coilcraft
L3
2.2 nH Chip Inductor
0402CS--2N2XJLW
Coilcraft
R1
180  Chip Resistor
RC0402FR--07--180RL
Yageo
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C6 and C9 are labeled on board but not placed.
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 1950 MHz
VDD2
VDD1
Via A
C9*
Via B
L4
C8
R1
C6*
RFIN
C5
C4
C3
L3
RFOUT
L2
L1
C2
C1
C7
Via A
R2
C10 C11
R3
Via B
C12 C13
QFN 3x3--12E
Rev. 0
Note: Component numbers C6* and C9* are labeled on board but not placed.
Figure 4. MML20242HT1 Test Circuit Component Layout
Table 7. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6, C9
Components Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
3.3 nH Chip Inductor
0402HP--3N3XJLW
Coilcraft
L2, L4
10 nH Chip Inductors
0402CS--10NXJLW
Coilcraft
L3
2.2 nH Chip Inductor
0402CS--2N2XJLW
Coilcraft
R1
180  Chip Resistor
RC0402FR--07--180RL
Yageo
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML20242HT1
4
RF Device Data
Freescale Semiconductor, Inc.
--50
35
--4
--51
30
--8
--52
25
--12
--53
20
--16
--20
S12 (dB)
0
85C
25C
--24
--28
1800
--56
5
VDD = 5 Vdc
1860
1920
2040
2100
VDD = 5 Vdc
1860
1920
1980
2040
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S12 versus Frequency versus
Temperature
40
--7
--40C
36
S21 (dB)
1980
--57
0
1800
--4
2100
--10
85C
25C
28
24
--13
--40C
--16
85C
--19
20
16
1800
25C
--40C
--54
15
44
32
85C
--55
10
--40C
S22 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 1950 MHz
25C
--22
VDD = 5 Vdc
1860
1920
1980
2040
2100
--25
1800
VDD = 5 Vdc
1860
1920
1980
2040
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 7. S21 versus Frequency versus
Temperature
Figure 8. S22 versus Frequency versus
Temperature
2100
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM TYPICAL CHARACTERISTICS: 1950 MHz
1.4
35
38
1
Gps, POWER GAIN (dB)
NF, NOISE FIGURE (dB)
1.2
85C
0.8
25C
0.6
--40C
0.4
0.2
1860
1920
1980
2040
34
20
33
15
32
85C
25C
31
10
30
5
29
VDD = 5 Vdc
f = 1950 MHz
15
16
17
18
19
20
21
22
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 9. Noise Figure versus Frequency
versus Temperature
Figure 10. Power Gain versus Output Power
versus Temperature, CW
44
43
42
--40C
41
40
25C
39
38
85C
37
36
1800
--40C
0
28
2100
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
0
1800
VDD = 5 Vdc
37
30
36
25
35
VDD = 5 Vdc
1 MHz Tone Spacing
1860
1920
1980
2040
2100
f, FREQUENCY (MHz)
Figure 11. Third Order Output Intercept Point
(Two--Tone) versus Frequency versus Temperature
23
26
25
--40C
24
85C
23
25C
22
21
20
19
1800
VDD = 5 Vdc
1860
1920
1980
2040
2100
f, FREQUENCY (MHz)
Figure 12. P1dB versus Frequency versus
Temperature, CW
MML20242HT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2535 MHz
VDD1
L3
C8
12
11
L4
10
VDD2
9
1
C5
C3
L2
L1
Z2
8
2
C4
RF
OUTPUT
Z3
C2
RF
INPUT
Z1
C1
3
BIAS
CIRCUIT
C7
4
R2
5
C10
7
BIAS
CIRCUIT
6
C11
R3
C12
Z1
Z2
Z3
C13
0.248  0.021 Microstrip
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure 13. MML20242HT1 Test Circuit Schematic
Table 8. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6, C9
Components Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
2.7 nH Chip Inductor
0402HP--2N7XJLW
Coilcraft
L2, L4
6.8 nH Chip Inductors
0402CS--6N8XJLW
Coilcraft
L3
1.0 nH Chip Inductor
0402CS--1N0XJLW
Coilcraft
R1
Component Not Placed
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C6, C9 and R1 are labeled on board but not placed.
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM APPLICATION CIRCUIT: 2535 MHz
VDD2
VDD1
Via A
C9*
Via B
L4
C8
R1*
C6*
RFIN
C5
C4
C3
L3
RFOUT
L2
L1
C2
C1
C7
Via A
R2
C10 C11
R3
Via B
C12 C13
QFN 3x3--12E
Rev. 0
Note: Component numbers C6*, C9* and R1* are labeled on board but not placed.
Figure 14. MML20242HT1 Test Circuit Component Layout
Table 8. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6, C9
Components Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
2.7 nH Chip Inductor
0402HP--2N7XJLW
Coilcraft
L2, L4
6.8 nH Chip Inductors
0402CS--6N8XJLW
Coilcraft
L3
1.0 nH Chip Inductor
0402CS--1N0XJLW
Coilcraft
R1
Component Not Placed
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML20242HT1
8
RF Device Data
Freescale Semiconductor, Inc.
0
--44
35
--5
--45
30
--10
--46
25
--15
--47
20
S12 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 2535 MHz
--20
--49
10
--25
--50
5
--30
VDD = 5 Vdc
2460
2520
2580
2640
--51
0
2400
2700
2460
2520
2580
2640
f, FREQUENCY (MHz)
Figure 15. S11 versus Frequency
Figure 16. S12 versus Frequency
38
--4
36
--7
34
--10
32
--13
30
28
2700
--16
--19
--22
26
24
2400
VDD = 5 Vdc
f, FREQUENCY (MHz)
S22 (dB)
S21 (dB)
--35
2400
--48
15
VDD = 5 Vdc
2460
2520
2580
2640
2700
--25
2400
VDD = 5 Vdc
2460
2520
2580
2640
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 17. S21 versus Frequency
Figure 18. S22 versus Frequency
2700
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
9
NF, NOISE FIGURE (dB)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
2400
VDD = 5 Vdc
2460
2520
2580
2640
f, FREQUENCY (MHz)
Figure 19. Noise Figure versus Frequency
2700
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS: 2535 MHz
44
43
42
41
40
39
38
37
36
VDD = 5 Vdc
1 MHz Tone Spacing
2400
2460
2520
2580
2640
2700
f, FREQUENCY (MHz)
Figure 20. Third Order Output Intercept Point
(Two--Tone) versus Frequency
MML20242HT1
10
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
3.40
0.50
1.6  1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 21. PCB Pad Layout for QFN 3  3
ML02
YWZ
Figure 22. Product Marking
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
11
PACKAGE DIMENSIONS
MML20242HT1
12
RF Device Data
Freescale Semiconductor, Inc.
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
13
MML20242HT1
14
RF Device Data
Freescale Semiconductor, Inc.
APPENDIX: APPLICATION CIRCUITS WITH TWO--SUPPLY VOLTAGE
50 OHM APPLICATION CIRCUIT: 1950 MHz
12
VDD1
L3
R1
C8
11
C9
10
VDD2
9
1
C5
C3
L2
L1
Z2
8
2
C4
RF
OUTPUT
Z3
C2
RF
INPUT
Z1
C1
3
BIAS
CIRCUIT
C7
4
R2
5
C10
7
BIAS
CIRCUIT
6
C11
R3
C12
Z1
Z2
Z3
C13
0.248  0.021 Microstrip
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure A--1. MML20242HT1 Test Circuit Schematic
Table A--1. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C9, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6
Component Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
3.3 nH Chip Inductor
0402HP--3N3XJLW
Coilcraft
L2
10 nH Chip Inductor
0402CS--10NXJLW
Coilcraft
L3
2.2 nH Chip Inductor
0402CS--2N2XJLW
Coilcraft
R1
180  Chip Resistor
RC0402FR--07--180RL
Yageo
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component number C6 is labeled on board but not placed.
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
15
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 1950 MHz
VDD2
VDD1
Via A
Via B
C9
C8
R1
C6*
RFIN
C5
C4
C3
L3
RFOUT
L2
L1
C2
C1
C7
Via A
R2
C10 C11
R3
Via B
C12 C13
QFN 3x3--12E
Rev. 0
Note: Component number C6* is labeled on board but not placed.
Figure A--2. MML20242HT1 Test Circuit Component Layout
Table A--1. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C9, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6
Component Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
3.3 nH Chip Inductor
0402HP--3N3XJLW
Coilcraft
L2
10 nH Chip Inductor
0402CS--10NXJLW
Coilcraft
L3
2.2 nH Chip Inductor
0402CS--2N2XJLW
Coilcraft
R1
180  Chip Resistor
RC0402FR--07--180RL
Yageo
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML20242HT1
16
RF Device Data
Freescale Semiconductor, Inc.
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 2535 MHz
VDD1
L3
C8
12
11
C9
10
VDD2
9
1
C5
C3
L2
L1
Z2
8
2
C4
RF
OUTPUT
Z3
C2
RF
INPUT
Z1
C1
3
BIAS
CIRCUIT
C7
4
R2
5
C10
7
BIAS
CIRCUIT
6
C11
R3
C12
Z1
Z2
Z3
C13
0.248  0.021 Microstrip
0.050  0.021 Microstrip
0.030  0.021 Microstrip
Figure A--3. MML20242HT1 Test Circuit Schematic
Table A--2. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C9, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6
Component Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
2.7 nH Chip Inductor
0402HP--2N7XJLW
Coilcraft
L2
6.8 nH Chip Inductor
0402CS--6N8XJLW
Coilcraft
L3
1.0 nH Chip Inductor
0402CS--1N0XJLW
Coilcraft
R1
Component Not Placed
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
Note: Component numbers C6 and R1 are labeled on board but not placed.
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
17
Appendix: Application Circuits with Two--Supply Voltage (continued)
50 OHM APPLICATION CIRCUIT: 2535 MHz
VDD2
VDD1
Via A
Via B
C9
C8
R1*
C6*
RFIN
C5
C4
C3
L3
RFOUT
L2
L1
C2
C1
C7
Via A
R2
C10 C11
R3
Via B
C12 C13
QFN 3x3--12E
Rev. 0
Note: Component number C6* and R1* are labeled on board but not placed.
Figure A--4. MML20242HT1 Test Circuit Component Layout
Table A--2. MML20242HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5
18 pF Chip Capacitors
GJM1555C1H180GB01
Murata
C2, C3, C8, C11, C12
18 pF Chip Capacitors
GRM1555C1H180JA01
Murata
C4, C9, C10, C13
0.1 F Chip Capacitors
GRM155R61A104K01
Murata
C6
Component Not Placed
C7
0.6 pF Chip Capacitor
GJM1555C1HR60WB01
Murata
L1
2.7 nH Chip Inductor
0402HP--2N7XJLW
Coilcraft
L2
6.8 nH Chip Inductor
0402CS--6N8XJLW
Coilcraft
L3
1.0 nH Chip Inductor
0402CS--1N0XJLW
Coilcraft
R1
Component Not Placed
R2, R3
1200  Chip Resistors
RC0402FR--07--1K2RL
Yageo
PCB
0.010, r = 3.48, Multilayer
RO4350B
Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML20242HT1
18
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier and MMIC Biasing
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2012
 Initial Release of Data Sheet
1
Apr. 2013
 Features bullet for noise figure value: changed from 0.57 dB to 0.59 dB to reflect the true capability of the
device, p. 1
 Table 1, Typical Performance: changed 1950 MHz noise figure from 0.57 dB to 0.59 dB and 2800 MHz
noise figure from 0.89 dB to 0.97 dB to reflect the true capability of the device, p. 1
 Added 1950 MHz, 50 Ohm Operation, application circuit figures as follows:
-- Fig. 5, S11 versus Frequency versus Temperature, p. 5
-- Fig. 6, S12 versus Frequency versus Temperature, p. 5
-- Fig. 7, S21 versus Frequency versus Temperature, p. 5
-- Fig. 8, S22 versus Frequency versus Temperature, p. 5
-- Fig. 9, Noise Figure versus Frequency versus Temperature, p. 6
-- Fig. 10, Power Gain versus Output Power versus Temperature, CW, p. 6
-- Fig. 11, Third Order Output Intercept Point (Two--Tone) versus Frequency versus Temperature, p. 6
-- Fig. 12, P1dB versus Frequency versus Temperature, CW, p. 6
 Added 2535 MHz, 50 Ohm Operation, application circuit figures as follows:
-- Fig. 15, S11 versus Frequency, p. 9
-- Fig. 16, S12 versus Frequency, p. 9
-- Fig. 17, S21 versus Frequency, p. 9
-- Fig. 18, S22 versus Frequency, p. 9
-- Fig. 19, Noise Figure versus Frequency, p. 10
-- Fig. 20, Third Order Output Intercept Point (Two--Tone) versus Frequency, p. 10
 Added Appendix: Application Circuits with Two--Supply Voltage, pp. 15–18
2
Sept. 2014
 Table 2, Maximum Ratings: added footnote to RF Input Power to indicate which test signal was used to
derive the max ratings value and updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Added Failure Analysis information, p. 19
MML20242HT1
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2012--2014 Freescale Semiconductor, Inc.
MML20242HT1
Document Number: MML20242H
Rev. 2, 9/2014
20
RF Device Data
Freescale Semiconductor, Inc.
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