Data Sheet

BGU6101
Wideband silicon low-noise amplifier MMIC
Rev. 2 — 3 February 2012
Product data sheet
1. Product profile
1.1 General description
The BGU6101 MMIC is an unmatched wideband MMIC featuring an integrated bias,
enable function and wide supply voltage. BGU6101 is part of a family of three products
(BGU6101, BGU6102 and BGU6104) and is optimized for 1 mA operation.
1.2 Features and benefits









Supply voltage range from 1.5 V to 5 V
Current range up to 10 mA at 3 V and 20 mA at 5 V supply voltage
NFmin of 0.8 dB
Applicable between 40 MHz and 4 GHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 6 A
ESD protection on all pins up to 3 kV HBM
Small 6-pin leadless package 2.0 mm  1.3 mm  0.35 mm
1.3 Applications




FM radio
Mobile TV, CMMB
ISM
Wireless security




RKE, TPMS
AMR, ZigBee, Bluetooth
WiFi, WLAN (2.4 GHz)
Low current applications
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE  1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol
Parameter
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 450 MHz
-
13.0
-
NFmin
minimum noise figure
dB
f = 900 MHz
-
12.0
-
dB
f = 2400 MHz; ICC(tot) = 3 mA
-
13.0
-
dB
f = 450 MHz
-
0.8
-
dB
f = 900 MHz
-
0.8
-
dB
f = 2400 MHz; ICC(tot) = 3 mA
-
1.3
-
dB
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 1.
Quick reference data …continued
Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE  1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol
Parameter
Conditions
PL(1dB)
output power at 1 dB gain f = 450 MHz
compression
f = 900 MHz
output third-order
intercept point
IP3O
Min Typ
Max Unit
-
11.0
-
dBm
-
11.5
-
dBm
f = 2400 MHz; ICC(tot) = 3 mA
-
6.5
-
dBm
f = 450 MHz
-
2.5
-
dBm
f = 900 MHz
-
2.0
-
dBm
f = 2400 MHz; ICC(tot) = 3 mA
-
6.5
-
dBm
2. Pinning information
2.1 Pinning
1
6
2
5
3
4
Transparent top view
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
VCC
1
supply voltage
n.c.
2
not connected
RF_IN
3
RF in
RF_OUT
4
RF out
ENABLE
5
enable
CUR_ADJ
6
current adjust
GND
GND
ground pad; RF and DC ground
3. Ordering information
Table 3.
BGU6101
Product data sheet
Ordering information
Type number
Package
Name
Description
BGU6101
HXSON6
plastic thermal enhanced super thin small outline
SOT1209
package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
Version
© NXP B.V. 2012. All rights reserved.
2 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
4. Marking
Table 4.
Marking
Type number
Marking
Description
BGU6101
1A*
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
supply voltage
VCC
RF input, AC coupled
voltage on pin IN
VRF_OUT voltage on pin RF_OUT
ICC(tot)
total supply current
Max
Unit
-
5.5
V
[1]
0.5 VCC + 1.8
V
[2]
0.5 0.9
V
DC
0.5 VCC + 0.6
V
VCC = 5.0 V
-
40
mA
VENABLE voltage on pin ENABLE
VRF_IN
Min
DC
Tstg
storage temperature
55
+150
C
Tj
junction temperature
-
+150
C
VESD
electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E
-
3000
V
Charged Device Model (CDM);
according to JEDEC standard
22-C101B
-
500
V
[1]
Due to internal ESD diode protection, the applied voltage should not exceed the specified maximum in
order to avoid excess current.
[2]
The RF input is directly coupled to the base of the RF transistor.
6. Thermal characteristics
BGU6101
Product data sheet
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
Typ
Unit
110
K/W
© NXP B.V. 2012. All rights reserved.
3 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
7. Static characteristics
Table 7.
Static characteristics
Symbol
Parameter
Conditions
VCC
supply voltage
RF input, AC coupled
ICC(tot)
total supply current
VCC = 3.0 V
VENABLE  0.4 V
Tamb
BGU6101
Product data sheet
ambient temperature
[1]
ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[2]
Configurable with external resistor.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
[1][2]
[1]
Min
Typ
Max
Unit
1.5
-
5.0
V
0.9
-
10
mA
-
-
0.01
mA
40
+25
+85
C
© NXP B.V. 2012. All rights reserved.
4 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
8. Dynamic characteristics
Table 8.
Dynamic characteristics
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
10.5
-
dB
ICC(tot) = 1.5 mA
-
13.0
-
dB
ICC(tot) = 3 mA
-
18.5
-
dB
ICC(tot) = 5 mA
-
22.5
-
dB
ICC(tot) = 10 mA
-
26.5
-
dB
ICC(tot) = 1.1 mA
-
29.5
-
dB
ICC(tot) = 1.5 mA
-
31.0
-
dB
ICC(tot) = 3 mA
-
33.5
-
dB
ICC(tot) = 5 mA
-
35.5
-
dB
ICC(tot) = 10 mA
-
38.0
-
dB
ICC(tot) = 1.1 mA
-
0.8
-
dB
ICC(tot) = 1.5 mA
-
0.8
-
dB
ICC(tot) = 3 mA
-
0.8
-
dB
ICC(tot) = 5 mA
-
0.8
-
dB
ICC(tot) = 10 mA
-
1.0
-
dB
ICC(tot) = 1.1 mA
-
12.0 -
dBm
ICC(tot) = 1.5 mA
-
11.0 -
dBm
ICC(tot) = 3 mA
-
6.0
-
dBm
ICC(tot) = 5 mA
-
2.0
-
dBm
ICC(tot) = 10 mA
-
3.5
-
dBm
ICC(tot) = 1.1 mA
-
5.5
-
dBm
ICC(tot) = 1.5 mA
-
2.5
-
dBm
ICC(tot) = 3 mA
-
4.5
-
dBm
ICC(tot) = 5 mA
-
9.0
-
dBm
ICC(tot) = 10 mA
-
14.0
-
dBm
100 MHz frequency
s212
MSG
NFmin
PL(1dB)
IP3O
BGU6101
Product data sheet
insertion power gain
maximum stable gain
minimum noise figure
output power at 1 dB gain compression
output third-order intercept point
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
5 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
10.5
-
dB
ICC(tot) = 1.5 mA
-
13.0
-
dB
ICC(tot) = 3 mA
-
18.5
-
dB
ICC(tot) = 5 mA
-
22.5
-
dB
ICC(tot) = 10 mA
-
26.5
-
dB
-
27.5
-
dB
150 MHz frequency
s212
MSG
insertion power gain
maximum stable gain
f = 150 MHz
f = 150 MHz
ICC(tot) = 1.1 mA
NFmin
PL(1dB)
minimum noise figure
output power at 1 dB gain compression
ICC(tot) = 1.5 mA
-
29.0
-
dB
ICC(tot) = 3 mA
-
32.0
-
dB
ICC(tot) = 5 mA
-
34.0
-
dB
ICC(tot) = 10 mA
-
36.0
-
dB
ICC(tot) = 1.1 mA
-
0.8
-
dB
ICC(tot) = 1.5 mA
-
0.8
-
dB
ICC(tot) = 3 mA
-
0.8
-
dB
ICC(tot) = 5 mA
-
0.8
-
dB
ICC(tot) = 10 mA
-
1.0
-
dB
-
12.0 -
ICC(tot) = 1.5 mA
-
11.0 -
dBm
ICC(tot) = 3 mA
-
6.0
-
dBm
ICC(tot) = 5 mA
-
2.0
-
dBm
ICC(tot) = 10 mA
-
3.0
-
dBm
ICC(tot) = 1.1 mA
-
5.5
-
dBm
ICC(tot) = 1.5 mA
-
2.5
-
dBm
ICC(tot) = 3 mA
-
4.5
-
dBm
ICC(tot) = 5 mA
-
9.0
-
dBm
ICC(tot) = 10 mA
-
14.0
-
dBm
f = 150 MHz
f = 150 MHz
ICC(tot) = 1.1 mA
IP3O
BGU6101
Product data sheet
output third-order intercept point
f = 150 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
dBm
© NXP B.V. 2012. All rights reserved.
6 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
10.0
-
dB
ICC(tot) = 1.5 mA
-
13.0
-
dB
ICC(tot) = 3 mA
-
18.5
-
dB
ICC(tot) = 5 mA
-
22.0
-
dB
ICC(tot) = 10 mA
-
25.5
-
dB
-
23.0
-
dB
450 MHz frequency
s212
MSG
insertion power gain
maximum stable gain
f = 450 MHz
f = 450 MHz
ICC(tot) = 1.1 mA
NFmin
PL(1dB)
minimum noise figure
output power at 1 dB gain compression
ICC(tot) = 1.5 mA
-
24.5
-
dB
ICC(tot) = 3 mA
-
27.0
-
dB
ICC(tot) = 5 mA
-
29.0
-
dB
ICC(tot) = 10 mA
-
31.5
-
dB
ICC(tot) = 1.1 mA
-
0.8
-
dB
ICC(tot) = 1.5 mA
-
0.8
-
dB
ICC(tot) = 3 mA
-
0.8
-
dB
ICC(tot) = 5 mA
-
0.8
-
dB
ICC(tot) = 10 mA
-
1.0
-
dB
-
12.5 -
ICC(tot) = 1.5 mA
-
11.0 -
dBm
ICC(tot) = 3 mA
-
6.0
-
dBm
ICC(tot) = 5 mA
-
2.5
-
dBm
ICC(tot) = 10 mA
-
3.0
-
dBm
ICC(tot) = 1.1 mA
-
5.5
-
dBm
ICC(tot) = 1.5 mA
-
2.5
-
dBm
ICC(tot) = 3 mA
-
4.5
-
dBm
ICC(tot) = 5 mA
-
9.0
-
dBm
ICC(tot) = 10 mA
-
14.0
-
dBm
f = 450 MHz
f = 450 MHz
ICC(tot) = 1.1 mA
IP3O
BGU6101
Product data sheet
output third-order intercept point
f = 450 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
dBm
© NXP B.V. 2012. All rights reserved.
7 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
9.5
-
dB
ICC(tot) = 1.5 mA
-
12.0
-
dB
ICC(tot) = 3 mA
-
17.0
-
dB
ICC(tot) = 5 mA
-
20.5
-
dB
ICC(tot) = 10 mA
-
23.5
-
dB
-
20.0
-
dB
900 MHz frequency
s212
MSG
insertion power gain
maximum stable gain
f = 900 MHz
f = 900 MHz
ICC(tot) = 1.1 mA
NFmin
PL(1dB)
minimum noise figure
output power at 1 dB gain compression
ICC(tot) = 1.5 mA
-
21.5
-
dB
ICC(tot) = 3 mA
-
24.0
-
dB
ICC(tot) = 5 mA
-
26.0
-
dB
ICC(tot) = 10 mA
-
28.5
-
dB
ICC(tot) = 1.1 mA
-
0.9
-
dB
ICC(tot) = 1.5 mA
-
0.8
-
dB
ICC(tot) = 3 mA
-
0.8
-
dB
ICC(tot) = 5 mA
-
0.8
-
dB
ICC(tot) = 10 mA
-
0.9
-
dB
-
13.0 -
ICC(tot) = 1.5 mA
-
11.5 -
dBm
ICC(tot) = 3 mA
-
6.5
-
dBm
ICC(tot) = 5 mA
-
2.5
-
dBm
ICC(tot) = 10 mA
-
3.0
-
dBm
ICC(tot) = 1.1 mA
-
5.0
-
dBm
ICC(tot) = 1.5 mA
-
2.0
-
dBm
ICC(tot) = 3 mA
-
5.5
-
dBm
ICC(tot) = 5 mA
-
10.0
-
dBm
ICC(tot) = 10 mA
-
14.5
-
dBm
f = 900 MHz
f = 900 MHz
ICC(tot) = 1.1 mA
IP3O
BGU6101
Product data sheet
output third-order intercept point
f = 900 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
dBm
© NXP B.V. 2012. All rights reserved.
8 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
8.5
-
dB
ICC(tot) = 1.5 mA
-
11.0
-
dB
ICC(tot) = 3 mA
-
15.5
-
dB
ICC(tot) = 5 mA
-
18.5
-
dB
ICC(tot) = 10 mA
-
21.0
-
dB
-
18.0
-
dB
1500 MHz frequency
s212
MSG
insertion power gain
maximum stable gain
f = 1500 MHz
f = 1500 MHz
ICC(tot) = 1.1 mA
NFmin
PL(1dB)
minimum noise figure
output power at 1 dB gain compression
ICC(tot) = 1.5 mA
-
19.5
-
dB
ICC(tot) = 3 mA
-
22.0
-
dB
ICC(tot) = 5 mA
-
24.0
-
dB
ICC(tot) = 10 mA
-
26.5
-
dB
ICC(tot) = 1.1 mA
-
1.1
-
dB
ICC(tot) = 1.5 mA
-
1.0
-
dB
ICC(tot) = 3 mA
-
0.9
-
dB
ICC(tot) = 5 mA
-
0.9
-
dB
ICC(tot) = 10 mA
-
1.0
-
dB
-
13.0 -
ICC(tot) = 1.5 mA
-
12.0 -
dBm
ICC(tot) = 3 mA
-
6.5
-
dBm
ICC(tot) = 5 mA
-
2.5
-
dBm
ICC(tot) = 10 mA
-
3.5
-
dBm
ICC(tot) = 1.1 mA
-
4.5
-
dBm
ICC(tot) = 1.5 mA
-
1.0
-
dBm
ICC(tot) = 3 mA
-
6.5
-
dBm
ICC(tot) = 5 mA
-
11.0
-
dBm
ICC(tot) = 10 mA
-
15.5
-
dBm
f = 1500 MHz
f = 1500 MHz
ICC(tot) = 1.1 mA
IP3O
BGU6101
Product data sheet
output third-order intercept point
f = 1500 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
dBm
© NXP B.V. 2012. All rights reserved.
9 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
7.5
-
dB
ICC(tot) = 1.5 mA
-
10.0
-
dB
ICC(tot) = 3 mA
-
14.5
-
dB
ICC(tot) = 5 mA
-
17.0
-
dB
ICC(tot) = 10 mA
-
19.5
-
dB
-
17.0
-
dB
1900 MHz frequency
s212
MSG
insertion power gain
maximum stable gain
f = 1900 MHz
f = 1900 MHz
ICC(tot) = 1.1 mA
NFmin
PL(1dB)
minimum noise figure
output power at 1 dB gain compression
ICC(tot) = 1.5 mA
-
18.5
-
dB
ICC(tot) = 3 mA
-
21.5
-
dB
ICC(tot) = 5 mA
-
23.5
-
dB
ICC(tot) = 10 mA
-
25.5
-
dB
ICC(tot) = 1.1 mA
-
1.3
-
dB
ICC(tot) = 1.5 mA
-
1.2
-
dB
ICC(tot) = 3 mA
-
1.0
-
dB
ICC(tot) = 5 mA
-
1.0
-
dB
ICC(tot) = 10 mA
-
1.1
-
dB
-
13.5 -
ICC(tot) = 1.5 mA
-
12.0 -
dBm
ICC(tot) = 3 mA
-
6.5
-
dBm
ICC(tot) = 5 mA
-
2.0
-
dBm
ICC(tot) = 10 mA
-
4.0
-
dBm
ICC(tot) = 1.1 mA
-
4.0
-
dBm
ICC(tot) = 1.5 mA
-
1.0
-
dBm
ICC(tot) = 3 mA
-
6.5
-
dBm
ICC(tot) = 5 mA
-
11.0
-
dBm
ICC(tot) = 10 mA
-
16.0
-
dBm
f = 1900 MHz
f = 1900 MHz
ICC(tot) = 1.1 mA
IP3O
BGU6101
Product data sheet
output third-order intercept point
f = 1900 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
dBm
© NXP B.V. 2012. All rights reserved.
10 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
6.5
-
dB
ICC(tot) = 1.5 mA
-
8.5
-
dB
ICC(tot) = 3 mA
-
13.0
-
dB
ICC(tot) = 5 mA
-
15.5
-
dB
ICC(tot) = 10 mA
-
17.5
-
dB
-
16.5
-
dB
2400 MHz frequency
s212
MSG
insertion power gain
maximum stable gain
f = 2400 MHz
f = 2400 MHz
ICC(tot) = 1.1 mA
NFmin
PL(1dB)
minimum noise figure
output power at 1 dB gain compression
ICC(tot) = 1.5 mA
-
18.0
-
dB
ICC(tot) = 3 mA
-
21.0
-
dB
ICC(tot) = 5 mA
-
22.5
-
dB
ICC(tot) = 10 mA
-
24.5
-
dB
ICC(tot) = 1.1 mA
-
1.7
-
dB
ICC(tot) = 1.5 mA
-
1.5
-
dB
ICC(tot) = 3 mA
-
1.3
-
dB
ICC(tot) = 5 mA
-
1.2
-
dB
ICC(tot) = 10 mA
-
1.3
-
dB
-
13.5 -
ICC(tot) = 1.5 mA
-
12.0 -
dBm
ICC(tot) = 3 mA
-
6.5
-
dBm
ICC(tot) = 5 mA
-
2.5
-
dBm
ICC(tot) = 10 mA
-
4.0
-
dBm
ICC(tot) = 1.1 mA
-
4.0
-
dBm
ICC(tot) = 1.5 mA
-
0.5
-
dBm
ICC(tot) = 3 mA
-
6.5
-
dBm
ICC(tot) = 5 mA
-
11.5
-
dBm
ICC(tot) = 10 mA
-
16.5
-
dBm
f = 2400 MHz
f = 2400 MHz
ICC(tot) = 1.1 mA
IP3O
BGU6101
Product data sheet
output third-order intercept point
f = 2400 MHz
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Rev. 2 — 3 February 2012
dBm
© NXP B.V. 2012. All rights reserved.
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Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot) = 1.1 mA
-
4.0
-
dB
ICC(tot) = 1.5 mA
-
6.0
-
dB
ICC(tot) = 3 mA
-
10.0
-
dB
ICC(tot) = 5 mA
-
12.5
-
dB
ICC(tot) = 10 mA
-
14.5
-
dB
-
15.0
-
dB
3500 MHz frequency
s212
MSG
insertion power gain
maximum stable gain
f = 3500 MHz
f = 3500 MHz
ICC(tot) = 1.1 mA
NFmin
PL(1dB)
minimum noise figure
output power at 1 dB gain compression
ICC(tot) = 1.5 mA
-
16.5
-
dB
ICC(tot) = 3 mA
-
18.0
-
dB
ICC(tot) = 5 mA
-
18.5
-
dB
ICC(tot) = 10 mA
-
19.5
-
dB
ICC(tot) = 1.1 mA
-
2.4
-
dB
ICC(tot) = 1.5 mA
-
2.3
-
dB
ICC(tot) = 3 mA
-
2.0
-
dB
ICC(tot) = 5 mA
-
1.9
-
dB
ICC(tot) = 10 mA
-
1.8
-
dB
-
13.5 -
ICC(tot) = 1.5 mA
-
12.0 -
dBm
ICC(tot) = 3 mA
-
7.0
-
dBm
ICC(tot) = 5 mA
-
2.0
-
dBm
ICC(tot) = 10 mA
-
3.5
-
dBm
ICC(tot) = 1.1 mA
-
5.0
-
dBm
ICC(tot) = 1.5 mA
-
1.0
-
dBm
ICC(tot) = 3 mA
-
6.0
-
dBm
ICC(tot) = 5 mA
-
10.5
-
dBm
ICC(tot) = 10 mA
-
16.5
-
dBm
f = 3500 MHz
f = 3500 MHz
ICC(tot) = 1.1 mA
IP3O
BGU6101
Product data sheet
output third-order intercept point
f = 3500 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
dBm
© NXP B.V. 2012. All rights reserved.
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NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
9. Enable control
Table 9.
ENABLE (pin 5)
40 C  Tamb  +85 C.
VENABLE (V)
State
 0.4
OFF
 1.2
ON
aaa-001754
16
aaa-001755
16
ICC
(mA)
lCC
(mA)
12
(4)
12
(2)
(3)
8
8
(3)
(2)
4
4
(1)
(1)
0
10
102
103
104
0
105
1
2
Rbias (Ω)
Tamb = 25 C.
3
4
5
6
VCC, Vctrl(V)
Tamb = 25 C.
(1) VCC = 1.5 V
(1) Rbias = OPEN
(2) VCC = 3 V
(2) Rbias = 12 k
(3) VCC = 5 V
(3) Rbias = 4.7 k
(4) Rbias = 2.4 k
Fig 2.
Supply current as a function of bias resistor;
typical values
BGU6101
Product data sheet
Fig 3.
Supply current as a function of supply voltage
and control voltage; typical values
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Wideband silicon low-noise amplifier MMIC
aaa-001756
30
(1)
(2)
|S21|2
(dB)
aaa-001757
25
IP3o
(dBm)
(3)
15
(4)
(5)
20
(3)
(6)
5
(7)
10
(2)
-5
(1)
-15
0
0
4
8
12
0
5
ICC(tot) (mA)
Tamb = 25 C; VCC = 3 V; Pi = 30 dBm.
10
15
20
ICC(tot) (mA)
Tamb = 25 C; f1 = 900 MHz; f2 = 900.2 MHz;
Pi = 30 dBm.
(1) f = 150 MHz
(2) f = 450 MHz
(1) VCC = 1.5 V
(3) f = 900 MHz
(2) VCC = 3 V
(4) f = 1500 MHz
(3) VCC = 5 V
(5) f = 1900 MHz
(6) f = 2400 MHz
(7) f = 3500 MHz
Fig 4.
Insertion power gain (s212) as a function of
total supply current; typical values
BGU6101
Product data sheet
Fig 5.
Output third-order intercept point as a function
of total supply current; typical values
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Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
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Wideband silicon low-noise amplifier MMIC
aaa-001758
10
aaa-001759
16
PL(1dB)
(dBm)
|S21|2
(dB)
5
(3)
12
0
8
-5
(2)
4
-10
(1)
-15
0
0
5
10
15
20
ICC(tot) (mA)
0
1000
2000
3000
4000
f (MHz)
Tamb = 25 C; f = 900 MHz.
Tamb = 25 C; ICC(tot) = 1.5 mA; VCC = 3 V; Pi = 30 dBm.
(1) VCC = 1.5 V
(2) VCC = 3 V
(3) VCC = 5 V
Fig 6.
Output power at 1 dB gain compression as a
function of total supply current; typical values
Fig 7.
Insertion power gain (s212) as a function of
frequency; typical values
aaa-001760
2
NFmin
(dB)
1.5
1
0.5
0
0
1000
2000
3000
f (MHz)
Tamb = 25 C; ICC(tot) = 1.5 mA; VCC = 3 V.
Fig 8.
BGU6101
Product data sheet
Minimum noise figure as a function of frequency; typical values
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Rev. 2 — 3 February 2012
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Wideband silicon low-noise amplifier MMIC
10. Package outline
HXSON6: plastic thermal enhanced super thin small outline package; no leads;
6 terminals; body 2 x 1.3 x 0.35 mm
SOT1209
shape
optional (4×)
X
D
terminal 1
index area
A
E
A1
detail X
e1
b
L
3
4
e
2
5 E2
E1
e
1
6
terminal 1
index area
shape
optional (6×)
D1
0
1.5 mm
scale
Dimensions
Unit
mm
A
A1
b
max
0.15
nom
min 0.35 0.04 0.25
D
D1
E
E1
1.9
1.0
1.2
1.2
2.1
1.2
1.4
E2
e
e1
1.0
0.5
1.7
L
0.15
1.4
0.25
Note
1. Dimension A is including plating thickness.
Outline
version
sot1209_po
References
IEC
JEDEC
JEITA
Issue date
11-06-10
11-09-15
SOT1209
Fig 9.
European
projection
Package outline SOT1209
BGU6101
Product data sheet
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Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
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Wideband silicon low-noise amplifier MMIC
11. Abbreviations
Table 10.
Abbreviations
Acronym
Description
AC
Alternating Current
AMR
Automated Meter Reading
CMMB
China Mobile Multimedia Broadcasting
DC
Direct Current
ESD
ElectroStatic Discharge
FM
Frequency Modulation
ISM
Industrial Scientific Medical
MMIC
Monolithic Microwave Integrated Circuit
RF
Radio Frequency
RKE
Remote Keyless Entry
TPMS
Tire-Pressure Monitoring System
WLAN
Wireless Local Area Network
12. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU6101 v.2
20120203
Product data sheet
-
BGU6101 v.1
Modifications:
BGU6101 v.1
BGU6101
Product data sheet
•
Section 1 on page 1, Table 2 on page 2, Table 3 on page 2, Table 5 on page 3, Table 8 on
page 5: Updated
•
Section 9 on page 13: Added figures
20110921
Preliminary data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
-
© NXP B.V. 2012. All rights reserved.
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Wideband silicon low-noise amplifier MMIC
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU6101
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
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Wideband silicon low-noise amplifier MMIC
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGU6101
Product data sheet
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© NXP B.V. 2012. All rights reserved.
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Wideband silicon low-noise amplifier MMIC
15. Contents
1
1.1
1.2
1.3
1.4
2
2.1
2.2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Enable control . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 February 2012
Document identifier: BGU6101
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